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Articles Tagged with ''transistor''

Freescale RF GaN transistor delivers breakthrough wideband performance

RFIC

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor.


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Cree introduces highest power C-Band GaN HEMTs

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.


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Freescale modernizes microwave oven industry with solid-state RF power

 Freescale Semiconductor is disrupting the microwave oven industry with additions to its RF heating portfolio: two new cost-effective, solid-state RF power transistor products and an application development ecosystem. The additions are engineered to enable consumer and commercial microwave oven appliance OEMs to create differentiated solutions and novel product types for a new cooking paradigm. 


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Cree introduces first from a new family of 50 V GaN HEMT Die

 Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.  


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RFMW offers 5 W wideband GaN transistor

 RFMW Ltd. announces design and sales support fora 50 ohm, input matched, GaN transistor from TriQuint. The T1G3000532-SM spans 30MHz to 3.5GHz and can be tuned for power or efficiency depending on customer application. 


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Infineon introduces 700 W L-Band transistor for radar systems

Infineon Technologies has introduced the PTVA127002EV 700 W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700 W) available for radar systems operating in the 1200-1400 MHz frequency range.


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Richardson RFPD announces addition to line of 50 V moisture-resistant DMOS transistors from ST

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).


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Richardson RFPD announces new 50 V moisture-resistant DMOS transistor from ST

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).


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Modelithics announces new RF simulation models for TriQuint GaN die products

Modelithics Inc. has collaborated with TriQuint Semiconductor Inc. to develop high-accuracy simulation models for five popular Gen II GaN Transistors from TriQuint, including the TGF2023-2-01, TGF2023-2-02, TGF2023-2-05, TGF2023-2-10 and TGF2023-2-20.


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Freescale's RF business makes long-term commitment to U.S.-based aerospace and defense market

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.


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