advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

Articles Tagged with ''transistor''

Freescale RF revenue drops four percent in Q2

Reflects slowing wireless CapEx spending
Announcing fiscal second quarter 2015 earnings results, Freescale reported RF segment revenue of $177 million, 3.8 percent below Q1 and 48 percent above last year's second quarter. The segment's revenue comes primarily from LDMOS power transistors used in cellular base stations. The company attributed the sequential decline to "slowing wireless capital expenditure spending in major markets, including China." The LTE build-out in China has fueled strong growth in the RF segment through 2014 and 2015, despite the slight decline in Q2.
Read More

MACOM announces new 650 W GaN on SiC HEMT pulsed power transistor

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.


Read More

Infineon and Panasonic to jointly develop GaN power devices

Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.


Read More

Cree introduces highest power C-Band GaN HEMTs

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.


Read More

Freescale modernizes microwave oven industry with solid-state RF power

 Freescale Semiconductor is disrupting the microwave oven industry with additions to its RF heating portfolio: two new cost-effective, solid-state RF power transistor products and an application development ecosystem. The additions are engineered to enable consumer and commercial microwave oven appliance OEMs to create differentiated solutions and novel product types for a new cooking paradigm. 


Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement