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Articles Tagged with ''transistor''

RFMW offers 5 W wideband GaN transistor

RFMW
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 RFMW Ltd. announces design and sales support fora 50 ohm, input matched, GaN transistor from TriQuint. The T1G3000532-SM spans 30MHz to 3.5GHz and can be tuned for power or efficiency depending on customer application. 


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Infineon introduces 700 W L-Band transistor for radar systems

Infineon Technologies
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Infineon Technologies has introduced the PTVA127002EV 700 W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700 W) available for radar systems operating in the 1200-1400 MHz frequency range.


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Richardson RFPD announces addition to line of 50 V moisture-resistant DMOS transistors from ST

Richardson RFPD Inc.
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Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).


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Richardson RFPD announces new 50 V moisture-resistant DMOS transistor from ST

Richardson RFPD Inc.
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Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).


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Modelithics announces new RF simulation models for TriQuint GaN die products

Modelithics Inc.
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Modelithics Inc. has collaborated with TriQuint Semiconductor Inc. to develop high-accuracy simulation models for five popular Gen II GaN Transistors from TriQuint, including the TGF2023-2-01, TGF2023-2-02, TGF2023-2-05, TGF2023-2-10 and TGF2023-2-20.


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Freescale's RF business makes long-term commitment to U.S.-based aerospace and defense market

Freescale Semiconductor Inc.
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Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.


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Nitronex qualifies rugged NPT1015 transistor

Nitronex
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Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.


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IQE and II-VI Inc. launch 150mm GaN HEMT epi wafers on SiC substrates

IQE plc
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IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.


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M/A-COM Tech announces 500 W GaN on SiC HEMT pulsed power transistor

M/A-COM Technology Solutions Inc.
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M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. 


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RFMW introduces 35W GaN transistor from TriQuint Semiconductor

RFMW
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RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC to 3.5 GHz GaN transistor offering up to 37W P3dB.  Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors.


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