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Articles Tagged with ''transistor''

Infineon introduces 700 W L-Band transistor for radar systems

March 24, 2014

Infineon Technologies has introduced the PTVA127002EV 700 W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700 W) available for radar systems operating in the 1200-1400 MHz frequency range.


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Richardson RFPD announces addition to line of 50 V moisture-resistant DMOS transistors from ST

December 9, 2013

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).


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Richardson RFPD announces new 50 V moisture-resistant DMOS transistor from ST

November 12, 2013

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).


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Modelithics announces new RF simulation models for TriQuint GaN die products

November 1, 2013

Modelithics Inc. has collaborated with TriQuint Semiconductor Inc. to develop high-accuracy simulation models for five popular Gen II GaN Transistors from TriQuint, including the TGF2023-2-01, TGF2023-2-02, TGF2023-2-05, TGF2023-2-10 and TGF2023-2-20.


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Freescale's RF business makes long-term commitment to U.S.-based aerospace and defense market

June 4, 2013

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.


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Nitronex qualifies rugged NPT1015 transistor

May 29, 2013

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.


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IQE and II-VI Inc. launch 150mm GaN HEMT epi wafers on SiC substrates

May 14, 2013

IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.


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M/A-COM Tech announces 500 W GaN on SiC HEMT pulsed power transistor

May 3, 2013

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. 


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RFMW introduces 35W GaN transistor from TriQuint Semiconductor

November 7, 2012

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC to 3.5 GHz GaN transistor offering up to 37W P3dB.  Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors.


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RFMD expands GaN matched power transistor family

June 20, 2012

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.


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