RFMW Ltd. announced design and sales support for a 1000 W pulsed power transistor. Ampleon’s BLA6H0912LS-1000 offers excellent ruggedness for avionics applications such as Mode-S, TCAS, JTIDS, DME and TACAN applications in the 960 to 1215 MHz frequency range.
NXP Semiconductors introduced the most powerful RF transistor in any technology operating at any frequency. Designed to deliver 1.50 kW CW at 50V, the MRF1K50H can reduce the number of transistors in high-power RF amplifiers, which decreases amplifier size and bill of materials. The MRF1K50H operates up to 500 MHz for a broad range of applications from laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers.
M/A-COM Technology Solutions Inc., a leading supplier of high performance analog RF, microwave and optical semiconductor products, announced the new NPT2024, a wideband transistor optimized for DC to 2.7 GHz operation using MACOM’s proprietary gallium nitride on silicon (GaN on Si) process is sampling today. The NPT2024 supports CW, pulsed and linear operation, boasting output levels up to 200 W.
Announcing fiscal second quarter 2015 earnings results, Freescale reported RF segment revenue of $177 million, 3.8 percent below Q1 and 48 percent above last year's second quarter. The segment's revenue comes primarily from LDMOS power transistors used in cellular base stations. The company attributed the sequential decline to "slowing wireless capital expenditure spending in major markets, including China." The LTE build-out in China has fueled strong growth in the RF segment through 2014 and 2015, despite the slight decline in Q2.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.
Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.