Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.
The Raytheon Co.-led Cobra Judy Replacement (CJR) program surpassed expectations during its first tests against a live rocket launch on March 19. From approximately 100 miles off the Florida coast, the powerful X- and S-Band radars integrated onboard the USNS Howard O. Lorenzen (T-AGM 25) successfully acquired and tracked both stages of an Atlas V rocket launched from Cape Canaveral and collected all associated data.
M/A-COM Technology Solutions (M/A-COM Tech) is showcasing a broad portfolio of new products for wireless backhaul, CATV, optical communications, and aerospace and defense applications at the IEEE/MTT-S International Microwave Symposium tradeshow in Montréal, Canada. New product solutions on display in M/A-COM Tech’s Booth #815 include: