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Articles Tagged with ''s-band''
Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.
The Raytheon Co.-led Cobra Judy Replacement (CJR) program surpassed expectations during its first tests against a live rocket launch on March 19. From approximately 100 miles off the Florida coast, the powerful X- and S-Band radars integrated onboard the USNS Howard O. Lorenzen (T-AGM 25) successfully acquired and tracked both stages of an Atlas V rocket launched from Cape Canaveral and collected all associated data.
Raytheon Co. has achieved two significant milestones on the Cobra Judy Replacement program, meeting critical performance requirements to advance ongoing system integration.
Northrop Grumman Corp. has successfully completed initial range testing of its Air and Missile Defense Radar (AMDR) system offering for the U.S. Navy.
M/A-COM Technology Solutions Inc. (M/A-COM Tech), a leading supplier of high performance analog semiconductor solutions, introduced a new power amplifier for S-Band radar applications.
Sumitomo Electric Device Innovations USA Inc. (SEDU) will be showing its full line of GaN HEMTs at this year’s MTT-S IMS 2012 Show in Montreal.
M/A-COM Technology Solutions (M/A-COM Tech) is showcasing a broad portfolio of new products for wireless backhaul, CATV, optical communications, and aerospace and defense applications at the IEEE/MTT-S International Microwave Symposium tradeshow in Montréal, Canada. New product solutions on display in M/A-COM Tech’s Booth #815 include: