Ted Rappaport, founding director of NYU WIRELESS and a leading proponent of using the millimeter wave spectrum for wireless communications, discusses the FCC's recent rulemaking actions and technology developments that are paving the way to 5G.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.
RFMW, Ltd. announces design and sales support for a pair of 5 GHz power amplifiers designed for 802.11a/n/ac WLAN applications. TriQuint’s TQP5523 and TQP5525are fully integrated modules with internal matching on both input and output ports.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.
Lake Shore Cryotronics, a leading innovator in solutions for measurement over a wide range of temperature and magnetic field conditions, announced that it will be exhibiting solutions for high-frequency material characterization at the 39th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sept. 14–19, in Tucson, Ariz.
Aethercomm Inc., has recently completed a high efficiency, high power and highly linear rack mounted amplifier which operates from 960 to 1215 MHz. This rack mounted unit is microprocessor controlled and provides excellent performance across the entire band.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD217, a new 28 to 32 GHz GaN power amplifier in die form, to their growing product line.
Pasternack Enterprises, Inc., an industry-leading manufacturer and supplier of RF, microwave and millimeter wave products, debuts an entirely new family of high isolation PIN diode switches consisting of three low insertion loss, high isolation and high speed modules, covering a frequency range of 1 to 12 GHz.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications.
AVX Corp., a leading manufacturer of passive components and interconnect solutions, has announced its high directivity 0302 thin film couplers for Wi-Fi bands—including the new, tight tolerance 0302 component—are now available through distribution.