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Articles Tagged with ''gain''

Freescale unveils 2-stage LNAs to support multiple air interfaces for wireless base stations in 1 system

October 9, 2012

Freescale Semiconductor announced new two-stage, low-noise amplifiers (LNAs) that address two gain stages in one device and deliver coverage across multiple bands to simplify wireless base station designs.


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Skyworks unveils two stage, high linearity and high gain low noise amplifier

September 27, 2012

Skyworks introduces a 2.3 to 2.8 gigahertz, two stage, high linearity and high gain (32 dB) low noise amplifier that offers very low noise figure (0.85 db) and excellent return loss (15 db) in a small 4 mm square quad flat, no lead package.


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Richardson RFPD introduces 30 W GaN power amplifier from TriQuint

September 20, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities of a new 30 W GaN power amplifier from TriQuint Semiconductor Inc. (TriQuint).


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Linear's 50 Ohm IF Gain Block Provides 47 dBm OIP3, 15.5 dB Gain, consumes only 450 mW

MMICs&More
September 19, 2012

Linear LTC6431-15Linear Technology announces the LTC6431-15, a 15.5 dB gain block that achieves high dynamic range in a 50 Ohm environment from 20 MHz to 1 GHz and beyond. It is manufactured on an advanced SiGe process and is available in two performance grades. 


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M/A-COM Tech announces new 8 W power amplifier

August 9, 2012

M/A-COM Technology Solutions Inc. (M/A-COM Tech), a leading supplier of high performance analog semiconductor solutions, introduced a new power amplifier for S-Band radar applications.


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Richardson RFPD introduces GaN on SiC HEMT RF transistors from Microsemi

June 26, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corp. (Microsemi).


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RFMD expands wireless product portfolio with integrated VGA

June 21, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFVA0016 — a highly integrated one-quarter watt (1/4W) analog-controlled variable gain amplifier (VGA).


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Richardson RFPD introduces two InGaP HBT amplifiers from Freescale

MMICs and More
May 15, 2012

Richardson/FreescaleRichardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.


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