Freescale Semiconductor announced new two-stage, low-noise amplifiers (LNAs) that address two gain stages in one device and deliver coverage across multiple bands to simplify wireless base station designs.
Skyworks introduces a 2.3 to 2.8 gigahertz, two stage, high linearity and high gain (32 dB) low noise amplifier that offers very low noise figure (0.85 db) and excellent return loss (15 db) in a small 4 mm square quad flat, no lead package.
Linear Technology announces the LTC6431-15, a 15.5 dB gain block that achieves high dynamic range in a 50 Ohm environment from 20 MHz to 1 GHz and beyond. It is manufactured on an advanced SiGe process and is available in two performance grades.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corp. (Microsemi).
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFVA0016 — a highly integrated one-quarter watt (1/4W) analog-controlled variable gain amplifier (VGA).
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.