Articles Tagged with ''gain''

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC to 3.5 GHz GaN transistor offering up to 37W P3dB.  Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors.

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is rolling out new processes to more quickly expand its catalog of broad-market products for commercial and defense customers. As a result, TriQuint will spotlight 12 new products at European Microwave Week in Amsterdam, October 29-31.

Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new internally matched, low noise amplifier (LNA) in a small 2x2mm DFN package from TriQuint Semiconductor Inc. (TriQuint).

Richardson RFPD Inc. announces immediate availability and full design support capabilities for three new devices from Freescale Semiconductor Inc. (Freescale).

TriQuint Semiconductor Inc. has introduced three new devices for CATV infrastructure and fiber to the premises (FTTP) applications, including the industry’s first amplifier supporting return path DOCSIS® 3.0 channel bonding with 5 to 300 MHz bandwidth.

Freescale Semiconductor announced new two-stage, low-noise amplifiers (LNAs) that address two gain stages in one device and deliver coverage across multiple bands to simplify wireless base station designs.

Skyworks introduces a 2.3 to 2.8 gigahertz, two stage, high linearity and high gain (32 dB) low noise amplifier that offers very low noise figure (0.85 db) and excellent return loss (15 db) in a small 4 mm square quad flat, no lead package.