advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

Articles Tagged with ''gain''

Freescale unveils 2-stage LNAs to support multiple air interfaces for wireless base stations in 1 system

Freescale Semiconductor, Tempe, AZ
No Comments

Freescale Semiconductor announced new two-stage, low-noise amplifiers (LNAs) that address two gain stages in one device and deliver coverage across multiple bands to simplify wireless base station designs.


Read More

Skyworks unveils two stage, high linearity and high gain low noise amplifier

Skyworks Solutions Inc.
No Comments

Skyworks introduces a 2.3 to 2.8 gigahertz, two stage, high linearity and high gain (32 dB) low noise amplifier that offers very low noise figure (0.85 db) and excellent return loss (15 db) in a small 4 mm square quad flat, no lead package.


Read More

Richardson RFPD introduces 30 W GaN power amplifier from TriQuint

Richardson RFPD Inc.
No Comments

Richardson RFPD Inc. announces immediate availability and full design support capabilities of a new 30 W GaN power amplifier from TriQuint Semiconductor Inc. (TriQuint).


Read More

Linear's 50 Ohm IF Gain Block Provides 47 dBm OIP3, 15.5 dB Gain, consumes only 450 mW

MMICs&More
Linear Technology Corp.
No Comments

Linear LTC6431-15Linear Technology announces the LTC6431-15, a 15.5 dB gain block that achieves high dynamic range in a 50 Ohm environment from 20 MHz to 1 GHz and beyond. It is manufactured on an advanced SiGe process and is available in two performance grades. 


Read More

M/A-COM Tech announces new 8 W power amplifier

M/A-COM Technology Solutions Inc.
No Comments

M/A-COM Technology Solutions Inc. (M/A-COM Tech), a leading supplier of high performance analog semiconductor solutions, introduced a new power amplifier for S-Band radar applications.


Read More

Richardson RFPD introduces GaN on SiC HEMT RF transistors from Microsemi

Richardson RFPD Inc.
No Comments

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corp. (Microsemi).


Read More

RFMD expands wireless product portfolio with integrated VGA

RF Micro Devices Inc.
No Comments

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFVA0016 — a highly integrated one-quarter watt (1/4W) analog-controlled variable gain amplifier (VGA).


Read More

Richardson RFPD introduces two InGaP HBT amplifiers from Freescale

MMICs and More
Richardson RFPD Inc.
No Comments

Richardson/FreescaleRichardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.


Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement