Articles Tagged with ''gain''

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Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new internally matched, low noise amplifier (LNA) in a small 2x2mm DFN package from TriQuint Semiconductor Inc. (TriQuint).

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.

Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is rolling out new processes to more quickly expand its catalog of broad-market products for commercial and defense customers. As a result, TriQuint will spotlight 12 new products at European Microwave Week in Amsterdam, October 29-31.

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC to 3.5 GHz GaN transistor offering up to 37W P3dB.  Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors.

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.

Pulse Electronics Corp., a leading provider of electronic components, introduces a new line of Shadow low profile transit (SLPT) NMO and direct mount antennas to support public safety, WLAN, smart grid/smart metering, 3G, and 4G applications including long term evolution (LTE). These high-performance, rugged, IP-67 rated antennas are provided in a slim, low profile radome of only 2.5" to 3" (63.5 to 76.2 mm) tall with a 1.5" (38.1 mm) diameter base and high gains of 4 to 5.6 dBi.

Mini-Circuits' new PGA-106 series of amplifiers deliver a winning combination of high dynamic range, low noise, and flat gain, fine-tuned to meet specific customer demands across a wide range of 75 Ω systems.

Hittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, announces the release of the two new literature pieces.

TriQuint Semiconductor Inc. has released three new packaged GaAs RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, VSAT and related applications.