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Articles Tagged with ''gain''

Richardson RFPD introduces two InGaP HBT amplifiers from Freescale

MMICs and More
May 15, 2012

Richardson/FreescaleRichardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.


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RFMD expands wireless product portfolio with integrated VGA

June 21, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFVA0016 — a highly integrated one-quarter watt (1/4W) analog-controlled variable gain amplifier (VGA).


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Richardson RFPD introduces GaN on SiC HEMT RF transistors from Microsemi

June 26, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corp. (Microsemi).


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M/A-COM Tech announces new 8 W power amplifier

August 9, 2012

M/A-COM Technology Solutions Inc. (M/A-COM Tech), a leading supplier of high performance analog semiconductor solutions, introduced a new power amplifier for S-Band radar applications.


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Linear's 50 Ohm IF Gain Block Provides 47 dBm OIP3, 15.5 dB Gain, consumes only 450 mW

MMICs&More
September 19, 2012

Linear LTC6431-15Linear Technology announces the LTC6431-15, a 15.5 dB gain block that achieves high dynamic range in a 50 Ohm environment from 20 MHz to 1 GHz and beyond. It is manufactured on an advanced SiGe process and is available in two performance grades. 


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Richardson RFPD introduces 30 W GaN power amplifier from TriQuint

September 20, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities of a new 30 W GaN power amplifier from TriQuint Semiconductor Inc. (TriQuint).


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Skyworks unveils two stage, high linearity and high gain low noise amplifier

September 27, 2012

Skyworks introduces a 2.3 to 2.8 gigahertz, two stage, high linearity and high gain (32 dB) low noise amplifier that offers very low noise figure (0.85 db) and excellent return loss (15 db) in a small 4 mm square quad flat, no lead package.


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Freescale unveils 2-stage LNAs to support multiple air interfaces for wireless base stations in 1 system

October 9, 2012

Freescale Semiconductor announced new two-stage, low-noise amplifiers (LNAs) that address two gain stages in one device and deliver coverage across multiple bands to simplify wireless base station designs.


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TriQuint releases 1st return path DOCSIS amplifier for channel bonding in HFC networks

MMICs&More
October 12, 2012

TriQuint Semiconductor Inc. has introduced three new devices for CATV infrastructure and fiber to the premises (FTTP) applications, including the industry’s first amplifier supporting return path DOCSIS® 3.0 channel bonding with 5 to 300 MHz bandwidth.


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Richardson RFPD introduces high linearity PA and two new dual-stage LNAs from Freescale

MMICs&More
October 15, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities for three new devices from Freescale Semiconductor Inc. (Freescale).


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