RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.
NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.
RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
TriQuint Semiconductor Inc. has released three new packaged GaAs RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, VSAT and related applications.
Texas Instruments Inc. (TI) introduced the industry’s smallest monolithic point-of-load (POL) DC/DC converters for harsh environments, including radiation tolerant, geological, heavy industrial, and oil and gas applications. The 6.3 V, 6-A TPS50601 and the 6.3 V, 3-A TPS50301 are synchronous step- down converters optimized for small form factor designs.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor Inc. (TriQuint).
A line of modular, highly reliable, solid-state systems for upgrading virtually all military and commercial radar transmitters with vacuum electron devices (VEDs) is available from Diversified Technologies Inc. of Bedford, MA.