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Articles Tagged with ''efficiency''

Linear introduces 42 V, 4 A (IOUT), synchronous step-down silent switcher

Linear Technology Corp. announces the LT8614, a 4 A, 42 V input capable synchronous step-down switching regulator. A unique Silent Switcher™ architecture reduces EMI/EMC emissions by more than 20 dB, well below the CISPR 25 Class 5 limit. Even with switching frequencies in excess of 2 MHz, synchronous rectification delivers efficiency as high as 96% while Burst Mode® operation keeps quiescent current under 2.5 µA in no-load standby conditions.


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Agilent offers simplified power-added efficiency testing

If you are assessing the power conversion efficiency of your power amplifiers, you are probably making power-added efficiency (PAE) measurements. Most PAE test setups use multiple instruments – such as RF power meters, digital oscilloscopes and DC power analyzers – to calculate RF voltage and current measurements.


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AWR awards prizes to IMS 2013 student design contest winners

Software/EDA

AWR Corp. gifted its software to the winners of the High Efficiency Power Amplifier (HEPA) and Software Defined Radio (SDR) Student Design Contests offered at the IMS 2013. The gifts are part of the AWR University Program, which encourages students to become involved in the dynamic profession of microwave and RF engineering and to apply their knowledge to practical designs using the highly efficient AWR design methodology.


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MACOM announces 10 W amplifier for 2-6 GHz broadband high power applications

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new MMIC power amplifier for high power broadband applications.


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RFMW introduces 800-Micron discrete FET from TriQuint

RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.


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Agilent releases new app note on vector network analysis fundamentals

Agilent has a new application note titled "Understand the Basic Principles of Vector Network Analysis" available now.


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NXP delivers industry's first ultra-wideband Doherty amplifiers

NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.


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M/A-COM Tech announces 500 W GaN on SiC HEMT pulsed power transistor

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. 


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Richardson RFPD introduces 200 W, DVB-T Pallet Amplifier with enhanced rugged LDMOS

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.


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RFMW introduces 250-Micron discrete FET from TriQuint

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.


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