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Articles Tagged with ''efficiency''

RFMW introduces 800-Micron discrete FET from TriQuint

June 3, 2013

RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.


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Agilent releases new app note on vector network analysis fundamentals

May 21, 2013

Agilent has a new application note titled "Understand the Basic Principles of Vector Network Analysis" available now.


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NXP delivers industry's first ultra-wideband Doherty amplifiers

May 21, 2013

NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.


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M/A-COM Tech announces 500 W GaN on SiC HEMT pulsed power transistor

May 3, 2013

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. 


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Richardson RFPD introduces 200 W, DVB-T Pallet Amplifier with enhanced rugged LDMOS

May 2, 2013

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.


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RFMW introduces 250-Micron discrete FET from TriQuint

April 12, 2013

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.


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TriQuint’s new RF PAs deliver high gain and efficiency for commercial and defense

RFIC
April 8, 2013

TriQuint Semiconductor Inc. has released three new packaged GaAs RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, VSAT and related applications.


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TI introduces the industry’s smallest POL DC/DC converters for harsh environments

February 19, 2013

Texas Instruments Inc. (TI) introduced the industry’s smallest monolithic point-of-load (POL) DC/DC converters for harsh environments, including radiation tolerant, geological, heavy industrial, and oil and gas applications. The 6.3 V, 6-A TPS50601 and the 6.3 V, 3-A TPS50301 are synchronous step- down converters optimized for small form factor designs.


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Richardson RFPD introduces 35 W, 32 V GaN on SiC RF power transistors from TriQuint

MMICs&More
January 16, 2013

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor Inc. (TriQuint).


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DTI introduces radar transmitter systems

January 9, 2013

A line of modular, highly reliable, solid-state systems for upgrading virtually all military and commercial radar transmitters with vacuum electron devices (VEDs) is available from Diversified Technologies Inc. of Bedford, MA.


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