If you are assessing the power conversion efficiency of your power amplifiers, you are probably making power-added efficiency (PAE) measurements. Most PAE test setups use multiple instruments – such as RF power meters, digital oscilloscopes and DC power analyzers – to calculate RF voltage and current measurements.
AWR Corp. gifted its software to the winners of the High Efficiency Power Amplifier (HEPA) and Software Defined Radio (SDR) Student Design Contests offered at the IMS 2013. The gifts are part of the AWR University Program, which encourages students to become involved in the dynamic profession of microwave and RF engineering and to apply their knowledge to practical designs using the highly efficient AWR design methodology.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new MMIC power amplifier for high power broadband applications.
RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.
NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.
RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
TriQuint Semiconductor Inc. has released three new packaged GaAs RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, VSAT and related applications.