Articles Tagged with ''efficiency''

NXP announces latest RF innovations at IMS 2014

NXP Semiconductors N.V. announced at IMS 2014 a series of innovative new solutions that consolidates the company’s leadership position in RF, with particular emphasis on enhancing the capabilities of wireless/cellular networks and digital broadcasting infrastructure. As the demand for high quality mobile data services explodes and new markets open up for digital TV and radio programming, NXP brings 50 years of expertise in RF to meet the power, quality, efficiency and cost challenges that network and service providers are facing today.


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Cree introduces highest power and frequency plastic packaged GaN transistors

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.


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Cree announces low cost extended bandwidth GaN HEMT transistors

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks.


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Buck-Boost Converter: LTC3114-1

LTC3114-1The LTC3114-1 is a synchronous, current-mode buck-boost converter that delivers up to 1 A of continuous output current from a wide range of power sources, including single-cell Li-Ion, 24 / 28 V industrial rails and 40 V automotive inputs.  The LTC3114-1’s 2.2 to 40 V input and 2.7 to 40 V output range provides a regulated output.


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Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.


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