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Articles Tagged with ''efficiency''
Linear Technology Corp. announces the LTC3769, a synchronous step-up DC/DC controller that replaces the boost diode with a high efficiency N-channel MOSFET, increasing efficiency and maximizing output current capability. This controller produces 24 V at up to 5 A output from a 12 V input with up to 98 percent efficiency, making it ideal for automotive, industrial and medical applications where a step-up DC/DC converter must have low heat dissipation in a small solution size.
Cree has released two new unmatched 50 V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications.
Richardson RFPD Inc. announced the availability and full design support capabilities for two new 2.5W power amplifier modules from TriQuint.
Richardson RFPD Inc. announced today the availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on Sic) from TriQuint.
RFMW Ltd. announces design and sales support fora 50 ohm, input matched, GaN transistor from TriQuint. The T1G3000532-SM spans 30MHz to 3.5GHz and can be tuned for power or efficiency depending on customer application.
Advantech Wireless and SATCOM Digital Networks (SDN) present details of the Next Generation Discovery Adaptive Satellite Access Technology (A-SAT™) platform.
Boeing and Turkish Airlines finalized an order for 15 additional 737 MAX 8s, valued at $1.6 billion at list prices. The order follows the announcement in May 2013when the Turkish flag carrier placed the largest Boeing order in the airline's history for 50 737 MAXs and 20 Next-Generation 737s.
A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corp. has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links.
NXP Semiconductors N.V. announced at IMS 2014 a series of innovative new solutions that consolidates the company’s leadership position in RF, with particular emphasis on enhancing the capabilities of wireless/cellular networks and digital broadcasting infrastructure. As the demand for high quality mobile data services explodes and new markets open up for digital TV and radio programming, NXP brings 50 years of expertise in RF to meet the power, quality, efficiency and cost challenges that network and service providers are facing today.
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.