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Articles Tagged with ''bias''

Agilent’s Waveform Generator/Fast Measurement unit used at IIT Bombay

Agilent Technologies Inc. announced that the Agilent B1530 Waveform Generator/Fast Measurement Unit (WGFMU) was used by the Indian Institute of Technology (IIT) Bombay to make ultrafast measurements of negative bias temperature instability (NBTI) degradation in deeply scaled high-K metal gate (HKMG) CMOS devices for a wide variety of DC and AC stress tests.


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RFMW announces TriQuint's 30 W GaN Transistors to 3.5 GHz

RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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Pasternack introduces all new line of X-Band amplifiers

Pasternack Enterprises Inc., an industry leading manufacturer and supplier of RF, microwave and millimeter wave products, introduces a new family of coaxial X-Band high gain power amplifiers. These RF amplifiers are typically used as driver amplifiers or high power output amplifiers in a wide variety of commercial, industrial and military applications including telecom infrastructure, test instrumentation, fixed microwave backhaul, radar systems, communication systems, satellite communications and commercial avionics.


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Two Microwave Detectors

Schottky Detectors BZD AtlanTecRF ePR

AtlanTecRF has two models of Zero Bias Schottky Detectors with high sensitivity and a wide operating temperature range. The first two frequency ranges offered are 10 MHz to 18 GHz and 2.0 to 8.0 GHz, both with sensitivity of 500 mV/mW and TSS of -50 dBm. Flatness over the 10 MHz to 18 GHz frequency band is +/-1.25 dB max and VSWR for each unit is 2.0:1.


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TriQuint introduces 27-31 GHz 5 W GaN PA

RFIC

TriQuint's TGA2594 is a Ka-Band power amplifier fabricated on TriQuint's 0.15um GaN on SiC process. Operating between 27 and 31 GHz, it achieves 5 W saturated output power with an efficiency of 28% PAE, and 23 dB small signal gain. Along with excellent linear characteristics, the TGA2594 is ideally suited to support both commercial and defense related satellite communications.


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