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Articles Tagged with ''bias''

Agilent’s Waveform Generator/Fast Measurement unit used at IIT Bombay

Agilent Technologies Inc. announced that the Agilent B1530 Waveform Generator/Fast Measurement Unit (WGFMU) was used by the Indian Institute of Technology (IIT) Bombay to make ultrafast measurements of negative bias temperature instability (NBTI) degradation in deeply scaled high-K metal gate (HKMG) CMOS devices for a wide variety of DC and AC stress tests.


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RFMW announces TriQuint's 30 W GaN Transistors to 3.5 GHz

RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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New Custom MMIC amplifier delivers ultra-wideband performance, high output power

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the product release of the CMD201, a new DC to 20 GHz distributed MMIC power amplifier in die form.


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Pasternack introduces all new line of X-Band amplifiers

Pasternack Enterprises Inc., an industry leading manufacturer and supplier of RF, microwave and millimeter wave products, introduces a new family of coaxial X-Band high gain power amplifiers. These RF amplifiers are typically used as driver amplifiers or high power output amplifiers in a wide variety of commercial, industrial and military applications including telecom infrastructure, test instrumentation, fixed microwave backhaul, radar systems, communication systems, satellite communications and commercial avionics.


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Two Microwave Detectors

Schottky Detectors BZD AtlanTecRF ePRAtlanTecRF has introduced two new models of Zero Bias Schottky Detectors with high sensitivity and a wide operating temperature range. The first two frequency ranges offered are 10 MHz to 18 GHz and 2.0 to 8.0 GHz, both with sensitivity of 500 mV/mW and TSS of -50 dBm. Flatness over the 10 MHz to 18 GHz frequency band is +/-1.25 dB max and VSWR for such a unit is 2.0:1.


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Custom MMIC's new 1-24 GHz GaAs driver amplifier delivers +20 dBm of output power

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added a new 1 to 24 GHz distributed driver amplifier in die form, the CMD197, to its growing product line.


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TriQuint introduces 27-31 GHz 5 W GaN PA

RFIC

TriQuint's TGA2594 is a Ka-Band power amplifier fabricated on TriQuint's 0.15um GaN on SiC process. Operating between 27 and 31 GHz, it achieves 5 W saturated output power with an efficiency of 28% PAE, and 23 dB small signal gain. Along with excellent linear characteristics, the TGA2594 is ideally suited to support both commercial and defense related satellite communications.


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Linear introduces ideal diode bridge controller that minimizes power loss and heat

Linear Technology Corp. introduces the LT4321, an ideal diode bridge controller that replaces two diode bridge rectifiers with low-loss N-channel MOSFET bridges to increase the available power and reduce heat dissipation in a Power over Ethernet Powered Device (PoE PD). IEEE 802.3 PoE specifications require PDs to accept DC supply voltages of any polarity over their Ethernet inputs.


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Skyworks introduces low current LNA for ISM Band and VHF wireless apps

RFIC

Skyworks introduces a low noise amplifier with high linearity and excellent return loss, while drawing as low as 5 mA of bias current.  The internal active bias circuitry of the SKY67015-396LF LNA provides stable performance over temperature and process variation.


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MACOM announces 10 W amplifier for 2-6 GHz broadband high power applications

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new MMIC power amplifier for high power broadband applications.


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