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Articles Tagged with ''bias''
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added a new 1 to 24 GHz distributed driver amplifier in die form, the CMD197, to its growing product line.
TriQuint's TGA2594 is a Ka-Band power amplifier fabricated on TriQuint's 0.15um GaN on SiC process. Operating between 27 and 31 GHz, it achieves 5 W saturated output power with an efficiency of 28% PAE, and 23 dB small signal gain. Along with excellent linear characteristics, the TGA2594 is ideally suited to support both commercial and defense related satellite communications.
Linear Technology Corp. introduces the LT4321, an ideal diode bridge controller that replaces two diode bridge rectifiers with low-loss N-channel MOSFET bridges to increase the available power and reduce heat dissipation in a Power over Ethernet Powered Device (PoE PD). IEEE 802.3 PoE specifications require PDs to accept DC supply voltages of any polarity over their Ethernet inputs.
Skyworks introduces a low noise amplifier with high linearity and excellent return loss, while drawing as low as 5 mA of bias current. The internal active bias circuitry of the SKY67015-396LF LNA provides stable performance over temperature and process variation.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new MMIC power amplifier for high power broadband applications.
Custom MMIC announces the addition of the CMD190 to its growing MMIC library of standard products. The CMD190 is a highly efficient GaAs MMIC ultra low noise amplifier for applications from 33 to 45 GHz.
RFMW Ltd. announces design and sales support for a 2-stage, high gain, low noise amplifier from Skyworks Solutions. The SKY67161-306LF provides 35 to 45 dB of gain with a noise figure of only 0.3 dB.
GaN power amplifiers are driving demand for increased power handling from supporting passive components, and Marki Microwave is responding with new high power bias tees and baluns. The new high power surface mount baluns (BALH-0003SMG and BALH-0006SMG) have a 37 dBm 1 dB compression point and improved 5 dB insertion loss (2 dB excess).
United Monolithic Semiconductors (UMS) announced the frequency band of the CHA3801-QDG LNA has been increased from 1.25 to 1.75GHz to 1 to 2GHz.
Analog Devices Inc. (ADI) introduced four new RF amplifier gain blocks which ease the design of high dynamic range communications, defense and instrumentation systems.