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Articles Tagged with ''silicon''

Keysight, UCSD, demo world’s first 5G, 100 to 200 m communication link up to 2 Gbps

Keysight Technologies Inc., in collaboration with The University of California San Diego (UCSD), has demonstrated the world’s first 64 (8 x 8) and 256-element (16 x 16), 60 GHz silicon wafer-scale phased-array transmitter with integrated high-efficiency antennas for Gbps communications at 100 to 200 meters. 


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WIN Semiconductors adds NP45 GaN-on-SiC power process to GaN portfolio

WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry,announced the expansion of its GaN technology portfolio with addition of the NP45 gallium nitride on silicon carbide process. NP45 is a 0.45μm-gate MMIC technology enabling users to design fully integrated amplifier products as well as custom discrete transistors, and has been optimized for use in 4G macro-cell base station power amplifiers operating at 2.7 GHz and above where bandwidth and linearity performance are key differentiators.


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MACOM extends industry leading diode position with family of HMIC PIN diode switches

MACOM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, today announced the SPDT MASW-002103-1363, SP3T MASW-003103-1364, and the SP4T MASW-004103-1365, a family of HMIC™ (Heterolithic Microwave Integrated Circuit) silicon PIN diode switches in conjunction with the MABT-011000-1423, a fully monolithic broadband surface mount bias network.


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MACOM announces fourth generation GaN technology

Next-generation GaN on Silicon technology rivals performance of GaN on Silicon Carbide, offering greater than 70% efficiency and 19dB Gain at a cost structure below incumbent LDMOS technology

M/A-COM Technology Solutions Holdings, Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced its fourth generation of Gallium Nitride on Silicon (GaN on Si) technology.


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MACOM to demonstrate cutting-edge Gen 4 GaN portfolio at IMS2015

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase the industry’s broadest and most advanced Gallium Nitride (GaN) RF product portfolio at IMS2015 in Phoenix, Ariz., May 19-21. MACOM’s booth will feature new, revolutionary Gen 4 GaN on Silicon product solutions optimized for commercial, industrial, scientific and medical applications.


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Infineon and Panasonic to jointly develop GaN power devices

Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.


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Silicon Labs launches sixth generation of industry-leading silicon TV tuners

Silicon Labs, the leading provider of silicon TV tuners, introduced the sixth generation of its high-performance, field-proven TV tuner ICs. Silicon Labs’ new Si2151 and Si2141 TV tuners address the global hybrid TV and digital TV markets, support both digital and analog video broadcasts and comply with all worldwide terrestrial/cable TV standards. 


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New Cree GaN HEMT die available via distribution

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 


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