Analog Devices Inc. (ADI) introduced a high power (44 W peak) single-pole, double-throw (SPDT) silicon switch that enables designers to reduce hardware size and bias power consumption in cellular radio systems.
MACOM Technology Solutions Inc. (MACOM) will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, Calif., May 24 - 26. MACOM’s booth will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications.
Coupling Wave Solutions S.A. (CWS), a leader in solutions for interference analysis in complex chip designs incorporating RF and analog blocks, announced the availability of a new productivity tool called SiPEX. SiPEX models the silicon substrate on insulators much faster than any other tools in its class and allows radio frequency (RF) silicon-on-insulator (SOI) designers to increase the number of design iterations—including spice simulation—up to 10 times in the same time frame.
Advancing semiconductor technology, X-FAB Silicon Foundries is putting itself at the vanguard of wideband gap semiconductor production by announcing the availability of its silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas.
Keysight Technologies Inc., in collaboration with The University of California San Diego (UCSD), has demonstrated the world’s first 64 (8 x 8) and 256-element (16 x 16), 60 GHz silicon wafer-scale phased-array transmitter with integrated high-efficiency antennas for Gbps communications at 100 to 200 meters.
WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry,announced the expansion of its GaN technology portfolio with addition of the NP45 gallium nitride on silicon carbide process. NP45 is a 0.45μm-gate MMIC technology enabling users to design fully integrated amplifier products as well as custom discrete transistors, and has been optimized for use in 4G macro-cell base station power amplifiers operating at 2.7 GHz and above where bandwidth and linearity performance are key differentiators.
MACOM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, today announced the SPDT MASW-002103-1363, SP3T MASW-003103-1364, and the SP4T MASW-004103-1365, a family of HMIC™ (Heterolithic Microwave Integrated Circuit) silicon PIN diode switches in conjunction with the MABT-011000-1423, a fully monolithic broadband surface mount bias network.
M/A-COM Technology Solutions Holdings, Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced its fourth generation of Gallium Nitride on Silicon (GaN on Si) technology.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase the industry’s broadest and most advanced Gallium Nitride (GaN) RF product portfolio at IMS2015 in Phoenix, Ariz., May 19-21. MACOM’s booth will feature new, revolutionary Gen 4 GaN on Silicon product solutions optimized for commercial, industrial, scientific and medical applications.
Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.