Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.
Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency.
Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.
IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.
Richardson RFPD Inc. announces its attendance and participation at EDI CON 2013. EDI CON is an industry-driven conference/exhibition targeting RF, microwave, EMC/EMI, and high-speed digital design engineers and system integrators developing products for today's communication, computing, RFID, wireless, navigation, aerospace and related markets.
Richardson RFPD Inc. announces its participation and the line-up of suppliers and products it will feature at IIC China 2013, to be held at the Shenzhen Convention & Exhibition Center, Shenzhen, China, February 28 to March 2, 2013.
Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.
Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.