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Articles Tagged with ''hemt''

Fujitsu begins sample shipments of 150 V breakdown GaN power device

July 29, 2013

Fujitsu Semiconductor Europe (FSEU) announced the release of MB51T008A, a silicon substrate-based, GaN power device that features a breakdown voltage of 150 V.


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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

June 3, 2013

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.


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IQE and II-VI Inc. launch 150mm GaN HEMT epi wafers on SiC substrates

May 14, 2013

IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.


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Richardson RFPD at EDI CON 2013

March 8, 2013

Richardson RFPD Inc. announces its attendance and participation at EDI CON 2013. EDI CON is an industry-driven conference/exhibition targeting RF, microwave, EMC/EMI, and high-speed digital design engineers and system integrators developing products for today's communication, computing, RFID, wireless, navigation, aerospace and related markets.


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Richardson RFPD announces IIC China 2013 line-up

February 22, 2013

Richardson RFPD Inc. announces its participation and the line-up of suppliers and products it will feature at IIC China 2013, to be held at the Shenzhen Convention & Exhibition Center, Shenzhen, China, February 28 to March 2, 2013.


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Cree releases 50 V GaN HEMT technology to reduce cellular energy needs

November 5, 2012

Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.


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Northrop Grumman begins sampling GaN MMIC product line for military

October 30, 2012

Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.


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SEDU announces next generation GaN HEMT for L- and S-Band space applications

June 14, 2012

Sumitomo Electric Device Innovations USA Inc. (SEDU) will be featuring its enhanced line of GaN HEMTs for satellite applications at the International Microwave Symposium (IMS) 2012 show in Montreal.  


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