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Cree Demonstrates 150-mm Silicon Carbide Substrates
Cree Inc. announced that it has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide (SiC) technology with the demonstration of high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material.
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LED), power switching devices and RF power transistors for wireless communications. The significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.
"Cree’s achievement of 150-mm SiC substrates further demonstrates Cree’s leadership in SiC materials technology,” said Vijay Balakrishna, Cree Materials Product Lne Manager. Steve Kelley, Cree Chief Operating Officer, added, “We expect that 150-mm substrates can reduce device cost, boost manufacturing output and expand our product range.”