RF Micro Devices Inc. (RFMD) announced the availability of the RF5633, a WiMAX 3.3 to 3.8 GHz power amplifier IC. The RF5633 is optimized for WiMAX systems, however it can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks.
The RF5633 integrates a 3-stage PA and power detector in an industry-leading 4 x 4 mm QFN package, significantly minimizing design-in footprint requirements. Additionally, the RF5633 works from a standard 5 V supply, eliminating the need for additional power supplies, enhancing ease of use for product development engineers. The RF5633 is also fully DC and RF tested, including EVM at the rated output power, maximizing application yields and accelerating time-to-market. The RF5633 features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside ground.
The RF5633 delivers EVM of 2.5 percent with an output power of 28dBm in the 3.4 to 3.6 GHz frequency range, or 27 dBm in the 3.6 to 3.8 GHz frequency range. The bias of the PA may be controlled to accommodate a 22 dB gain step to increase the dynamic range of the system. The RF5633 offers high gain of 34 dB and high linear output power, with best-in-class efficiency. The RF5633 maintains linearity over a wide range of temperatures and power outputs while the external match enables tuning for output power over multiple bands. The RF5633 also features internal input and inter-stage matching, a power-down mode and power detection.
The RF5633 offers global customers a broadly applicable power amplifier IC featuring the powerful combination of industry leading RF performance coupled with best in class product size and ease of use.