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Integra Technologies Inc. (ITI), a manufacturer of high power pulsed RF transistors, announced the development of the world’s largest LDMOS pulsed device designed specifically to operate in S-band frequency range. The ILD2731M140 is a high power pulsed RF transistor designed specifically to operate in the 2.7 to 3.1 GHz frequency range for commercial S-band radars. The ILD3135M180 is a high power pulsed RF transistor designed specifically to operate in the 3.1 to 3.5 GHz frequency range for military S-band radars.
“We continue to set the pace in high performance devices in the S-band radar market,” said John Titizian, Integra’s Founder and President. “We now offer devices delivering the most pulsed peak output power in both the commercial and military S-band radar frequency bands using LDMOS.”
“We have received excellent customer feedback for our existing S-band LDMOS devices and are excited to accommodate the higher pulse widths and duty cycles that are becoming more prevalent in today’s marketplace,” said Jeff Burger, Vice President of Engineering at Integra.
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