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RF Micro Devices (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it has been awarded $3.2 M in R&D contracts by the United States Department of Defense related to GaN microelectronics, including materials, device fabrication and high power circuits.
The $3.2 M in R&D contracts extends RFMD's contract backlog for calendar 2010 to approximately $5 M. Since calendar 2004, RFMD has been awarded approximately $13 M in R&D contracts by the US Government.
Jeff Shealy, VP and General Manager of RFMD's Defense and Power business unit, said, "We are gratified to receive these R&D contract awards from the US Department of Defense, and we look forward to furthering our research and development efforts related to GaN microelectronics, including materials, device fabrication and high power circuits. GaN technology is superior to other semiconductor process technologies in power per square millimeter, bandwidth and breakdown voltages, and the unique physical properties of RFMD's GaN technology deliver industry-leading reliability performance."
Bob Bruggeworth, President and CEO of RFMD, said, "Given the superior performance characteristics of RFMD's GaN technology, we expect it to be a disruptive technology across a broad range of defense applications, including radar, communications and electronic warfare. RFMD's state-of-the-art GaN technology is also applicable to a growing number of commercial applications, such as public mobile radio, 3G/4G base stations, CATV line amplifiers, as well as exciting new applications in high performance RF lighting.
"Importantly, RFMD's GaN technology is manufactured in the same high-volume manufacturing facility as our industry-leading GaAs products, providing RFMD a measurable competitive advantage and enabling further improvement in RFMD's return on invested capital (ROIC)."
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