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Cree Inc. announced that it has acquired a portfolio of patents and patent applications related to semi-insulating silicon carbide (SiC) material and power device technology from Daimler AG. The portfolio consists of approximately 20 patent families, including issued patents in the United States, Germany, Japan and China. US Patent No. 5,856,231 ('231), "Process for Producing High-Resistance Silicon Carbide," is an important piece of the portfolio that relates to the manufacturing of semi-insulating SiC using vanadium doping.
"We had licensed this impressive group of patents for many years and the full acquisition is a valuable addition to our already extensive intellectual property position," said Cengiz Balkas, Cree Vice President and General Manager, Power and RF.
Vijay Balakrishna, Cree Product Line Manager, Materials, added, "Cree is already the leader in high purity semi-insulating SiC and acquiring the '231 patent further bolsters our IP position, especially in semi-insulating SiC achieved through vanadium doping."
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