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Industry News

Freescale Introduces RF Power Devices and Reference Designs

August 27, 2009
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Freescale Semiconductor introduces two final-stage LDMOS RF power transistors giving designers a choice between discrete and integrated circuit (IC) solutions. This choice, along with two accompanying reference designs, offers designers greater flexibility and speeds time to market. The new transistors are optimized for use in power amplifiers based on Time Division-Synchronous Code Division Multiple Access (TD-SCDMA), a third-generation wireless standard that is being widely deployed throughout China and also is being considered in other markets.

Freescale’s advanced high-efficiency devices include the MRF7P20040H LDMOS FET and the MD7IC2050N multi-stage integrated power amplifier IC. Freescale’s simultaneous introduction of two reference designs based on Doherty architecture speeds manufacturers’ ability to create compact, cost-effective, high performance base station transceiver products for TD-SCDMA networks.

“Freescale continues its leadership in LDMOS RF technology by offering high performance solutions for customers using TD-SCDMA wireless technology in China,” said Gavin Woods, Vice President and General Manager of Freescale's RF Division. “Freescale is applying its knowledge and leadership in RF power technology to support the specific requirements of TD-SCDMA as the technology is rapidly deployed throughout China.”

Recent Articles by Freescale Semiconductor, Tempe, Ariz.

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