MWJ:  What are the most significant benefits of HVVFET™? How does this compare to other high power devices?

HVVi: The benefit of designing high power devices using a high voltage breakdown technology and a vertical device structure is high power density. The resulting power device is housed in a smaller package for the rated output power and has higher impedance at the leads compared to other silicon MOSFET devices. The vertical technology also exhibits the industry’s highest ruggedness rating at 20:1 VSWR mismatch tolerance to the load over all phase angles due to the lack of the parasitic bipolar latch-up failure mechanism, which is inherent to all other MOSFET technologies. These extremely rugged devices do not require additional protection circuitry at the antenna like all other solutions enabling lower system costs.

MWJ:  What applications are most applicable to these benefits?

HVVi: The avionics market, especially airborne avionics, benefit greatly from the small package form factor reducing the size and weight of the end application while maintaining all of the performance specifications. The extreme ruggedness also allows the removal of the heavy ferromagnetic material in the protection circuitry further reducing weight and cost.

MWJ: How well does HVVFET address military and government system requirements and application in military systems, specifically radar and electronic warfare?

HVVi: In military systems reliability is the main concern. The extreme ruggedness of the device enables high performance under the most adverse conditions.

MWJ:  What is the status and trends of non-linear modeling of HVVFET rf devices? 

HVVi: Non-linear models will be available in the future.

MWJ: Any specific recommendations for Class of operation? Any guide based on application?

HVVi: Current pulse application devices in our product portfolio are biased at Class AB operation which is a good trade-off among output power, gain and efficiency. For applications where the efficiency is critical the technology can also be run in higher order classes such as Class C, E or F.  For additional linearity the device can be biased in a Class A mode of operation at the cost of efficiency.

MWJ:  What is the status on the use of HVVFET devices in MMICs? 

HVVi: Integration is possible in the future as the HVVFET technology is processed on a standard CMOS platform.

MWJ: What are the commercial and military markets concern about HVVFET and reliability? Are there issues or history of issues? 

HVVi: The vertical RF FET is a mature, established technology. The commercial and military markets will want to review the reliability of HVVi’s implementation in the product reliability report which includes industry standard JEDEC/MIL-STD reliability tests.