RF Micro Devices, a leader in the design and manufacture of high-performance semiconductor components, announced it will showcase its broad portfolio of RF communications components and unveil its gallium nitride (GaN) Foundry Services at the IEEE MTT-S International Microwave Symposium 2009, June 9-11, in Boston, MA. RFMD will also demonstrate the company's high-power GaN products as well as the company's Integrated Configurable Components at the RFMD booth.
RFMD's high-power, small form factor GaN transistors are capable of >300 W at 48 V, covering 500 MHz of bandwidth, and are targeted at pulsed applications such as S-band radar. In addition, RFMD's Integrated Configurable Components on display will include the RF2051, which features wideband frequency generation and mixing capabilities.
RFMD's broad portfolio of RF communications components supplies more than 30 end markets. At IMS2009, RFMD will showcase products serving multiple markets, featuring business units including Defense and Power, Broadband Components, Foundry Services, Wireless Connectivity and Wireless Products.
RFMD is exhibiting at the IEEE MTT-S International Microwave Symposium 2009, June 9-11, at the Boston Convention and Exhibition Center, Boston, MA, in Booth #2412.