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Industry News / Semiconductors / Integrated Circuits

Nitronex Launches 200 W GaN HEMT Power Transistor

May 26, 2009
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Nitronex, a leader in gallium nitride RF power transistors, has released the NPT1007 for applications up to 1.2 GHz. The NPT1007 comprises two power transistors, 100 W each, in an industry standard four lead Gemini package. This small footprint allows easy combining of both transistors into a compact high power amplifier solution. After combining losses, the device achieves 200 W at 63 percent efficiency with 18.3 dB gain at 900 MHz. The NPT1007 is robust to an output mismatch of 10:1 while in saturation.


“The NPT1007 was developed while working with leading power amplifier designers who needed a smaller, more efficient solution than was available on the market to date,” said Ray Crampton, Director of Marketing at Nitronex. “The NPT1007 has high gain and efficiency performance from 14 to 28 V, allowing designers to cooptimize power, thermal rise, efficiency and linearity. Success with early customers has confirmed that the NPT1007 offers a compelling solution across this voltage range.”

The NPT1007 is available in a thermally enhanced ceramic air cavity bolt-down package. It is lead-free and RoHS compliant, is production ready, and is available from stock to 10 weeks lead time through Nitronex’s standard sales channels.

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