RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance semiconductor components, announced the expansion of the company's high performance switch portfolio to include three new multi-throw RF switches: the RF1126, RF1131 and RF1132. The high performance RF switches are designed to operate in multiple market segments, including antenna tuners, CDMA handsets and 3G multimode devices.
The RF1126 is a low power, single-pole double-throw (SPDT) symmetric switch that offers industry-leading insertion loss and linearity performance suitable for signal routing and antenna switching applications. The RF1131 and RF1132 are single-pole three-throw (SP3T) symmetric switches designed for applications requiring high linearity performance, such as CDMA handsets and 3G multimode devices. The RF1131 and RF1132 are pin-for-pin compatible and offer performance trade-offs between linearity and insertion loss, enabling designers to select a switch based upon a specific application's performance priorities, thereby increasing platform capabilities.
Each of the three RF switches utilize RFMD's gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) manufacturing capabilities and leverage proprietary switch technology developed for use in RFMD's high volume cellular transmit modules.