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Industry News / Semiconductors / Integrated Circuits

Freescale Strengthens RF Power Transistor Portfolio

November 4, 2008
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Freescale Semiconductor has reinforced its commitment to the commercial aerospace market with the introduction of a high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power transistor. The latest addition to Freescale’s RF aerospace portfolio, the MRF6V4300N device is optimized for HF to UHF communications.


The MRF6V4300N power transistor is ideal for a wide range of applications, including radar and air traffic management systems. It is designed to deliver the highest gain and efficiency in its class. The device delivers RF output power of 300 W CW from 10 to 600 MHz. At 450 MHz, it has a gain of 22 dB and 60 percent efficiency.

“Freescale’s LDMOS RF devices have been proven in wireless and other applications around the world, and now we’re bringing their capabilities to the aerospace market where they are superior in performance to previous-generation devices currently in use,” said Gavin Woods, vice president of Freescale’s Radio Frequency Division. “In radar systems, bipolar junction transistors and vertical MOSFETs have been the device of choice for decades. However, their performance has not increased significantly over the years. In contrast, Freescale plans to continue enhancing the output power, frequency range, gain efficiency and ruggedness of its LDMOS technology for many years to come.”

Housed in Freescale’s RoHS compliant, cost-effective over molded plastic package, the MRF6V4300N device has exceptionally tight mechanical tolerances and an extremely low thermal resistance of 0.24 degrees Celsius per watt (C/W), which enhances the management of heat dissipation and helps reduce the heat sink size.

Recent Articles by Freescale Semiconductor, Tempe, AZ

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