Nitronex, a leader in gallium nitride on silicon (GaN-on-Si) RF power transistors for the wireless infrastructure, broadband and military markets, has expanded the performance data of its 28 V, 5 W class high electron mobility transistor (HEMT) to include frequencies between 5.1 to 5.2 GHz and 5.7 to 5.8 GHz. Designated the NPTB00004, it achieves 27 dBm (400 mW) average output power at 2 percent EVM in 5.2 GHz WiMAX systems, and 28 dBm (630 mW) average output power at 2 percent EVM in 5.8 GHz WiMAX systems (single carrier OFDM, 64-QAM ¾, 8 burst, 20 ms frame, 15 ms frame data, 3.5 MHz channel bandwidth, peak/avg = 10.3 dB).

"This data on the NPTB00004 provides our customers with an ideal solution for WiMAX applications in the 5 GHz band of operation," said Ray Crampton, director of marketing at Nitronex. "The NPTB00004 is a uniquely versatile product that, combined with other broadband devices from Nitronex, allows designers to develop power amplifiers for multiple frequency bands using a common power device lineup."

The NPTB00004 transistors are packaged in a cost-effective plastic over-molded PO150S (similar to a SOIC-8) package with an exposed thermal pad. Samples and application boards are available. Typical pricing is $9 each in quantities of 1000, with a lead time from stock to 10 weeks.

The NPTB00004 transistors are lead-free and RoHS compliant.