Toshiba America Electronic Components Inc. (TAEC) announced the expansion of its gallium arsenide field effect transistor (GaAs FET) lineup with four new devices optimized for power efficiency. The power added efficiency enhanced GaAs FETs are targeted for microwave radios and block up converters (BUC).
Two new X-band GaAs FETs for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM1011-2UL and the TIM1011-8UL, operate in the 10.7 to 11.7 GHz range. The TIM1011-2UL has an output power at one-dB gain compression point of 2 W, or 33.5 dBm (typ.), linear gain of 9.5 dB (typ.) and power added efficiency of 36 percent. The TIM1011-8UL features an output power at one-dB gain compression point of 8 W, or 39.5 dBm (typ.), linear gain of 9.0 dB (typ.) and power efficiency of 39 percent.
For satellite applications, Toshiba has added two 30 W C-band power amplifiers that operate in the 5.9 to 6.4 GHz and 7.7 to 8.5 GHz range. Both are targeted for use in BUC applications for very small aperture terminals (VSAT) and solid-state power amplifiers.
"The improved efficiency of these power amplifiers will help microwave designers ease thermal management in their BUC and SSPA designs such as smaller heat sinks and possible fan-less configurations contributing to reduced size and weight of the overall system," said Homayoun Ghani, business development manager, Microwave, Logic and Small Signal Devices, in TEAC's Discrete Business Unit.