HVVi Semiconductors Inc., a developer of silicon RF power transistors, announced two new additions to its growing line of products based on the industry’s first High Voltage Vertical Field Effect Transistor (HVVFET™) architecture. Using this innovative technology and its inherent ability to deliver higher output power and gain than competitive technologies in a smaller package, HVVi has introduced the HVV1011-035, a 35 W surface-mount RF power transistor for IFF, TCAS and Mode-S applications, and the HVV1214-200, a 200 W RF power transistor for ground-based radar applications. Like their predecessors, the new devices are designed to operate at 48 V.
“Our initial products introduced our revolutionary HVVFET architecture to the industry and demonstrated the significant advantages it offers over existing LDMOS and Bipolar technologies in terms of output, gain, power consumption and ruggedness,” said Daniel Ong, Product Manager at HVVi. “But the true benefits of the HVVFET architecture are realized at the systems level. By adding a 35 W driver to our existing 300 W power transistor in the 1030 to 1090 MHz band, and a 200 W device to our existing 25 and 75 W drivers in the 1.2 to 1.4 GHz band, designers of IFF and ground-based radar systems can now take advantage of this technology’s dramatic benefits to deliver higher output, lower power consumption and better ruggedness at lower cost."
From a system’s perspective, the HVVFET technology offers performance advantages in terms of gain, efficiency and impedance that allow designers to eliminate amplification stages in Power Amplifiers (PAs), reduce parts count and shrink PCB space requirements. At the same time, the technology’s higher rated ruggedness allows radar and avionics designers to eliminate bulky and costly isolators and, in the process, significantly reduce system weight, size and cost.