Cree Announces First Commercially Available GaN RF MMIC Products
Cree Inc. announces the introduction of the world's first commercially available GaN monolithic microwave integrated circuit (MMIC) amplifiers. These two "catalog" MMICs integrate Cree's proven GaN RF transistor technology with a variety of other circuit elements to form fully integrated amplifier circuits. This allows for a dramatic reduction in size and increase in performance over hybrid amplifiers.
Many RF integrated circuits can now be identically replicated on a single silicon carbide (SiC) substrate in a production process similar to that used for commercial microprocessors. The new broadband power amplifier MMICs, the CMPA0060005 and CMPA2560025, are now available for sample release in packaged and die formats.
The CMPA0060005 is a wideband 5 W distributed amplifier operating from DC to 6 GHz. The CMPA2560025 is a higher power, 25 W reactively matched amplifier operating from 2.5 to 6 GHz. Both MMICs are suitable for a variety of applications where high power over broad bandwidths is required. As an example, a pair of CMPA2560025s, driven by a CMPA0060005, can provide over 40 dB gain with an output power up to 50 W in the 2.5 to 6 GHz band.
Cree also announces the expansion of its standard full-wafer (SFW) MMIC Foundry service to include shared multi-project (SMP) "pizza mask" foundry runs on a quarterly basis. This SMP service is available for both SiC MESFET and GaN HEMT MMIC processes.
"The introduction of the industry's first off-the-shelf "catalog" GaN MMICs continues to set Cree apart as the industry's leader in wide bandgap MMIC technology," said Jim Milligan, Cree director of RF and microwave products "These products can provide our customers with the performance improvement and size reduction benefits of microwave circuit integration in convenient "drop-in" 50 ohm amplifiers. Further, our new SMP foundry service will be ideal for lower-cost prototyping of SiC or GaN MMICs by allowing customers to purchase a portion of a shared multi-project wafer."
"This MMIC milestone is the culmination of many years of internal investment and external support from the US Department of Defense, the Title III Office and the Defense Advanced Research Projects Agency (DARPA). We are extremely pleased to see the results of these efforts beginning to pay off for both the military and commercial markets," said John Palmour, executive vice president for advanced devices at Cree.
Features of the GaN RF MMICs include:
CMPA0060005 GaN MMIC
• Wideband distributed amplifier covering DC - 6 GHz
• Up to 5 W of CW RF output power
• High wideband DC to RF efficiency (typically 25 percent)
• 28 to 48 V operating voltage range
CMPA2560025 GaN MMIC
• Broadband reactively matched amplifier covering 2.5 to 6 GHz
• Up to 25 W CW RF output power
• Outstanding broadband DC to RF efficiency (typically 30 to 45 percent)
• 28 V operating voltage