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HVVi Semiconductors Inc., a developer of power transistors, announced the first major advance in silicon RF power transistor design in more than 15 years. Based on the world’s first High Frequency, High Voltage Vertical Field Effect Transistor (HVVFET™), HVVi’s new architecture delivers frequency bandwidth, voltage and power levels to radar and avionic applications that far exceed the capabilities of current bipolar and LDMOS technologies. This revolutionary new patent-pending technology allows HVVi to achieve performance levels comparable to non-silicon technologies at much more attractive cost levels.
As part of its initial announcement, HVVi is also introducing its first three products based on this innovative new HVVFET architecture. Targeted at high power, pulsed RF applications in the L-band such as IFF, TCAS, TACAN and Mode-S, the three new devices leverage the inherent benefits of the HVVFET process to deliver high output power and high gain in an extremely compact package. All three transistors are designed to operate at 48 V.
“While currently-used silicon RF transistor technologies such as bipolar and LDMOS have served radar and avionics designers well, they have hit a ceiling in terms of performance,” said Wil Salhuana, president and CEO. “By creating the first high frequency, high voltage vertical field effect transistor, we have redefined the performance capabilities of the discrete silicon power transistor and opened the door to a vast array of new applications.”
Evaluation kits and small-unit quantities are available now. The HVV1214-025 is housed in an innovative surface-mount package and sells for $135.69 in 1-24 unit quantities. The HVV1214-100 and HVV1011-300 are housed in industry-standard flanged packages. The HVV1214-100 sells for $226.15 and the HVV1011-3004 for $398.31 in 1-24 unit-quantities. Production volumes will be available in 3Q 2008.
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