advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
Industry News

An Improved BSIM4 Model for 0.13 μm RF CMOS Using a Simple Lossy Substrate Extraction Method

An improved BSIM4 large-signal model for a 0.13 μm RF CMOS transistor with lossy substrate description is presented in this article. To accurately accomplish the CMOS model for microwave circuit designs, the RLC networks representing the parasitic...

May 15, 2008
/ Print / Reprints /
| Share More
/ Text Size+
In order to improve the simulation accuracy of microwave circuit designs, an accurate active device model plays an important role for circuit simulations. According to previous studies, the BSIM models can precisely predict the characteristics of deep sub-micron MOSFETs at operation frequencies below 1 GHz for digital and analog...
To view the full article, please register or login.


Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.


advertisment Advertisement