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TriQuint Semiconductor has announced the availability of a new high-voltage HBT (heterojunction bipolar transistor) family of power amplifiers for 3G and 4G base stations.
The new PAs offer exceptionally high efficiency when used in a Doherty configuration, the design most commonly employed by base transceiver station manufacturers. The new devices can substantially increase efficiency in 3G cellular base stations, which can lead to greater energy savings while reducing waste heat nearly 50 percent. Used in a Doherty configuration, the devices have delivered efficiency levels of 57 percent, surpassing that offered by laterally-diffused metal oxide semiconductor (LDMOS) transistors, or more expensive gallium nitride (GaN) devices. For details, visit TriQuint during European Microwave Week at Stand 400 in the ICM Building of the Messe Munchen trade fair complex, or visit www.triquint.com.
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