Mimix Broadband Inc. introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) wideband buffer amplifier with on-chip drain bias coil and DC blocking. Using 0.30 micron gate length GaAs pseudomorphic high electron mobility transistor (PHEMT) device model technology, the buffer amplifier covers the 2 to 18 GHz frequency bands and has a small-signal gain of 9 dB with a noise figure of 4.5 dB across the band.
Identified as the CMM4000-BD, this device also achieves +19 dBm P1dB compression point and is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. "The CMM4000-BD is well suited as a buffer stage for wide bandwidth applications," stated Jeff Kovitz, senior product manager, Mimix Broadband Inc.
"The device is a single supply distributed amplifier with integrated bias coil, providing excellent input and output match coupled with a flat gain response across frequency. Solid performance over temperature makes this device an ideal addition to any multi-stage amplifier application."
Mimix performs 100 percent on-wafer DC testing and 100 percent RF wafer qualification, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.