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Industry News

Jazz Semiconductor Announces Release of 130nm SiGe BiCMOS Technology

Jazz Semiconductor announces the release of a new 130nm SiGe BiCMOS technology designed for high speed wireless and optical communications applications.

May 29, 2007
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Jazz Semiconductor announces the release of a new 130nm SiGe BiCMOS technology designed for high speed wireless and optical communications applications.


This process combines industry standard 130nm CMOS with 200 GHz HBT NPN transistors for high performance RF and millimeter-wave integrated circuits.

The technology offering includes advanced analog components (inductors, capacitors, resistors) with high-density digital circuitry to provide scaling of both the analog and digital blocks in a Systems-on-Chip (SoC) approach.

The process is available for prototyping through a Multi-Project Wafer (MPW) Program offering 5x5mm2 tiles. Jazz also offers a comprehensive design and modeling environment tailored to address the specific hurdles encountered in increasingly complex RF and analog designs.

New PSP MOSFET models, statistical models and a Process Control Model Tool (PCMT) are now available for Jazz processes. These groundbreaking new models and tools provide more accurate simulations, reduce design time and speed time-to-market.

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