Fairchild Semiconductor Delivers RF Solutions at IMS 2007
Fairchild Semiconductor will display its leading-edge RF solutions for 3G handset, WLAN and WiMAX applications at the upcoming International Microwave Symposium (IMS) conference.
Being held June 3 to 8, in Honolulu, HI, the IMS 2007 conference is sponsored by the IEEE Microwave Theory and Techniques Society (MTT-S) and attracts a worldwide audience of RF/microwave professionals. Fairchild’s RF power amplifiers for WCDMA/HSDPA address the need to improve battery life in next-generation 3G handsets and offer decreased current consumption at all power levels.
For WLAN and WiMAX applications, a critical industry concern is providing high performance, easy-to-use RF devices in compact packages. Fairchild’s WLAN and WiMAX devices offer industry-leading performance in terms of high linearity, low current consumption, high levels of integration and low profile, ultra-compact packaging.
In addition to exhibiting RF products in booth 1343 at IMS 2007, Fairchild’s technologists will present a paper called “A WCDMA HBT Power Amplifier Module with Integrated Si DC Power Management IC for Current Reduction under Backoff Operation” by Gary Hau, Jeffrey Turpel, James Garrett and Harvey Golladay.
“Fairchild’s RF solutions offer high performance with significantly reduced current consumption—all to answer the needs of current- and next-generation wireless platforms,” said Sanjiv Shah, Fairchild’s director of marketing, RF products. “In addition to RF solutions for 3G handset, WLAN and WiMAX markets, Fairchild offers an extensive RF portfolio of high volume components for the wireless communications industry.”