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Industry News

RFMD unveils 380 W GaN wideband pulsed power amplifier

January 11, 2012
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RFMD’s new RF3928B is a 65 V 380 W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general-purpose broadband amplifier applications. The RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. This package provides thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

The RF3928B's features include: wideband operation from 2.8 to 3.4 GHz; advanced GaN HEMT and heat-sink technologies; optimized evaluation board layout for 50 Ω operation; integrated matching components for high terminal impedances; 65 V operation typical performance: pulsed output power 380 W; small-signal gain 13 dB; drain efficiency 50 percent; and -40° to 85°C operating temperature.

Source: RFMD

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