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Industry News

Numerical FDTD Modeling of Silicon Integrated Spiral Inductors

This article describes the application of an electromagnetic simulator, based on the finite difference time domain (FDTD) method, to the numerical modeling of silicon integrated spiral inductors. The proposed approach is fully three-dimensional (3D) an...

August 1, 2003
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The rising demand for low cost, low power personal communication systems operating up to 6 GHz makes the integration of radio frequency subsystems on monolithic silicon substrates an attractive challenge. Deep sub-micron technology allows silicon CMOS or silicon-germanium (SiGe) integrated circuits (IC) to operate at frequencies well within the...
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