- Buyers Guide
Aerospace & Defense Electronics Supplement
Early Returns: U.S. Export Control Reform Positive
A&D Test & Measurement
Efficient Design and Analysis of Airborne Radomes
RF Micro Devices, Inc., a leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, last week announced the introduction and sampling of Gallium Nitride (GaN) wideband power amplifier ICs to Tier 1 WiMAX, cellular base station and Public Mobile Radio (PMR) customers. The family achieves superior performance in gain, output power and efficiency across a broad range of frequencies as compared to currently available gallium arsenide (GaAs) and silicon LDMOS products.
"Our GaN process technology positions RFMD to provide customers with the high-power, broadband solutions needed to meet growing customer demand for more cost-effective and more efficient deployment of next-generation wireless infrastructure," said Jeff Shealy, RFMD Vice President, Infrastructure Product Group. "RFMD's GaN power ICs deliver a simple, single amplifier solution for wideband applications dependant on maximizing power, bandwidth and efficiency."
The new family includes multiple parts, RF3821 (8W P1dB WiMAX PA, 2.3-2.7GHz), RF 3823 (8W P1dB WiMAX PA, 3.3-3.8GHz), RF3822 (14W saturated power Public Mobile Radio PA, 100-1000MHz), and RF 3820 (8W P1dB cellular PA, 1.8-2.2GHz). Both WiMAX power amplifier ICs provide 29dBm linear output power with 2.5% EVM and flat gain of 11dB across multiple bands. The cellular power amplifier IC provides 27dBm linear output power with -50dBc ACPR and flat gain of 13dB across DCS/PCS/W-CDMA frequency bands. The PMR power amplifier IC provides 14W to 12W saturated output power and flat gain of 11.5dB with PAE of 65% mid band at 500MHz. The designs operate on a 28V rail and include internal-matching elements to deliver a 50-ohm interface over the band of operation and are packaged in a thermally enhanced AlN package for efficient heat removal.
RFMD anticipates production shipments of the GaN power amplifiers will commence in calendar year 2007.
Additional information about the features and pricing of the GaN process technology can be found by visiting www.rfmd.com.
RF Micro Devices, Inc. (NASDAQ: RFMD) is a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications. RFMD's power amplifiers, transmit modules, cellular transceivers and system-on-chip (SOC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in current- and next-generation mobile handsets, cellular base stations, wireless local area networks (WLANs), wireless personal area networks (WPANs) and global positioning systems (GPS). Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier enabling the world's leading mobile device manufacturers to deliver advanced wireless capabilities that satisfy current and future market demands.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
Get access to premium content and e-newsletters by registering on the web site. You can also subscribe to Microwave Journal magazine.