Nitronex, an developer and manufacturer of high performance RF power transistors for the commercial and broadband wireless infrastructure markets, has developed a high voltage platform to support next generation wireless infrastructure applications. Leveraging the company’s existing qualified NRF1 (GaN on Silicon) technology, the new platform will take advantage of thermal enhancements in wafer processing, transistor design and packaging to support 48 V operation under all waveforms and extreme flange temperatures.
“Designed to support high power broadband operations, the high voltage, thermally enhanced platform enables software reconfigurable radios by giving RF power amplifier designers a power and bandwidth combination not available with other production technologies,” said Chris Rauh, Nitronex VP sales and marketing. “Supporting supply voltages of 48 V allows devices to operate with reduced memory effects, wider RF output bandwidth and easier matching. In a new RF power amplifier design, this translates into improved system efficiency and reduced number of product variants, resulting in reduced acquisition and operating costs. For existing designs, we see this product line helping to extend the service life of existing systems by improving efficiency and bandwidth in the current footprint of fielded assets.”
The initial products planned will be designed for WiMAX and 3G/3G LTE waveforms operating in frequency bands from 1.8 to 2.2 GHz and 2.3 to 2.7 GHz. Line-ups with output power ranging from 5 to 200 W will be supported. Target specifications will be available in late January with initial samples expected in March 2007 and full production qualification to be completed in the third quarter of 2007.