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Industry News

Enhancement/Depletion Mode InGaP/AlGaAs PHEMT for High Efficiency Power Amplifiers

A complete day-by-day schedule of the technical presentations that compose the MTT-S, RFIC, ARFTG and µAPS conferences

May 1, 2001
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Sunday, May 20, 2001


8:00 am­12:00 pm

WSF: New Advances in Nonlinear Circuit Design

In the last decade, a rapidly increasing demand in the development of microwave, millimeter-wave and wireless communication systems can be observed. There are few other areas in which such enormous changes like those of nonlinear network design can be recognized. In the past, the active devices and their technology have moved from classical solutions to solid state performances and their integration. Currently, the monolithic integrated circuit designs become predominant, and following this, the classical circuit design has been shifted to advanced techniques both in time, frequency and mixed domains.

This workshop will present in depth tutorial discussions as well as new developments in techniques for analyzing nonlinear circuits. It will provide discussions on problems of new ideas like application of wavelets in nonlinear network design or fundamental aspects of circuit simulation aspects.

Furthermore, this workshop will supply a forum for discussion on present important topics and possible new developments in the future. This event will also provide a platform for participants to introduce their results or suggestions by presenting their transparencies and explaining their point of view.


1:00 pm­5:00 pm

WSG: High Power RF Si: Devices, Modules and Trends

Not only at low level designs but also at high power levels Si continues to be the work horse of high power solid state applications. Device design improvements, new packaging concepts and new high volume manufacturing approaches have pushed Si far ahead of any other competing technology when it comes to power. In fact, Si competes with itself with BJT and MOSFET designs, from SiGe to SiC cousins, racing to fill the need created by the wireless telecommunications boom.

Speakers who specialize in various aspect of device design, modeling, manufacturing and testing, will review the state of the art in Si RF power technology, mechanical and electrical limitations, cost drivers, reliability issues and new packaging approaches. We will try to identify fundamental limitations to performance and cost. We will ask application experts to predict and rationalize future trends in power, frequency and integration.

WSK: Dynamics of the Microwave Workbench

The growing use of digital communication systems has complicated RF circuit design. The complexity of modern communication systems confronts designers with the non-trivial task of interpreting and translating system demands into circuit specifications.

Additionally, verification of simulated with measured results is an indispensable part of the design procedure. To excite the RF circuit one can make use of commercially available instruments. The signals generated are, however, not readily accessible to the simulator in use and form a significant bottleneck for the verification. Furthermore, these instruments are limited to the generation of a limited set of complex digital signals, while the designer often requires a broader selection of complex digital signals combined with for example noise, phase-noise or pre-correction information.

This workshop examines the trends in simulation at the system and circuit level, including the link to hardware realization, modeling and test with specific attention being paid to aspects of standardization in software and hardware design.


8:00 am­5:00 pm

WSA: State-of-the-Art Filter Design using EM and Circuit Simulation Techniques

Significant advances in computational electromagnetics continue to be made. They have been implemented in widely available commercial software as well as dedicated in-house software. They are applied to microwave filter simulation, modeling, synthesis and design, and EM validation. They are accompanied by novel modeling and design concepts involving parameterization of arbitrary geometries, space mapping and surrogate modeling, the adjoint sensitivity method, reduced-order modeling and equivalent circuit extraction, artificial neural network representation, genetic algorithms and fast frequency sweeps.

Optimal design more closely and automatically integrates EM and circuit simulations directly into the design and manufacturing process in a manner increasingly transparent to the designer. This workshop will address the state of the art from component modeling to multiplexer design. Expectations of using EM simulators as effective tools in an automated design environment continue to be raised based on considerable work currently in progress. We emphasize optimization methodologies as a cornerstone in simulation, modeling, design and manufacturing.

This workshop will draw upon the popularity and success of recent workshops involving electromagnetics and CAD. A balance between theory, implementation and practical discussions of computational and design issues will be struck so that the workshop will have wide appeal.

WSB: RF Systems and Circuit Issues of Third Generation Wideband CDMA Systems Like UMTS

Just as second generation digital wireless systems such as GSM or cdmaOne have been widely deployed, work is well underway to develop third generation (3G) wireless networks which are called International Mobile Telecommunications (IMT-2000), and in Europe, Universal Mobile Telecommunication System (UMTS). These networks will add broadband data to support video, Internet access and other high speed data services for untethered devices. This workshop provides comprehensive fundamental and practical technical information about the RF-related system and RFIC issues of 3G W-CDMA systems like UMTS, cdma2000 etc., technologies that will play a major role in the future of wireless telecommunications. The information presented here is targeted at RF engineering professionals and wireless practitioners.

This workshop will begin by introducing spread spectrum and CDMA basics. The second Section gives a description of the 3GPP system specifications. Sections 3 and 4 will deal in detail with RF-related 3GPP test cases and simulation issues. Here, pertinent RF system requirements derived from the 3GPP test cases such as duplexing, transmit frequency stability, output power dynamics, adjacent channel leakage ratio, modulation accuracy, maximum and minimum input signal levels, adjacent channel selectivity, and blocking and intermodulation characteristics are presented. Moreover, 3GPP-related simulation scenarios are discussed and simulation results for various system issues like dependence of bit error rate from adjacent channel selectivity or influence of transmitter characteristics on error vector magnitude are presented. Section 5 will focus on the evolution from 2G to 3G transmitter and receiver architectures (e.g., Tx heterodyne and direct up-conversion, Rx heterodyne and homodyne, etc.). The pros and cons of various concepts will be investigated both from the performance and the economical point of view. In particular, the RF front-end challenges associated with multimode and multiband systems (concerning antennas, switches, filters, power amplifiers, frequency synthesizers) are addressed. In Sections 6 and 7, BiCMOS and SiGe RFICs successfully designed for commercial applications using Infineon semiconductor processes will be presented. Finally, in Section 8 the feasibility of UMTS transceivers fabricated from CMOS technologies in the 2 GHz band are investigated. Here, the linearity of the baseband filters and second-order intermodulation of the mixers play an important role.

WSC: RF and High Speed Applications of Tunnel Devices

In recent years personal mobility and the attraction for portable devices have led to an explosive growth in wireless communication products. The requirements of flexibility and fast accesses to data are the driving forces for the introduction of advanced applications at higher and higher frequencies. These applications make severe demands on the technology required to implement them, with current solutions involving a mixture of technologies.

One proposed new technology is the use of Tunnel Devices. Quantum mechanical tunneling is a transport process that dominates as device dimensions get smaller and smaller. A tunnel diode is arranged so that electron-tunneling rate is reduced in a certain range of biases, leading to a negative differential resistance (NDR) characteristic. A tunnel diode can be integrated with a transistor resulting in a novel, multifunctional device.

The non-linear and unique NDR characteristic of a tunnel device is useful for both digital and RF applications and is the defining feature of this new technology. Many circuits that utilize tunnel devices have been proposed and demonstrated for both digital and Analog/MMIC applications (like adders, SRAMs, XNORs, A/D converters, oscillators, frequency multipliers, amplifiers, mixers, receivers and antennas). Novel and innovative circuit ideas and topologies have made effective use of the enhanced functionality of the tunnel devices making this new technology attractive.

Advantages of this technology include:

·         reduction in circuit complexity and die size

·         multifunctional ICs with superior performance

·         low power and low voltage operation (down to less than 1.0 V)

The device technology must be optimized to meet the specific performance requirements and properties of each circuit. Recent advances in materials research have enabled tunnel diodes to meet these challenges. Heterostructure band-gap engineering has led to the achievement of tunnel diodes with high peak current densities and good peak-to-valley current ratios.

This workshop will present a comprehensive overview of this new tunnel device technology and its applications in RF and digital circuits. The current status of tunnel diode physics and modeling will be reviewed along with measurement techniques and noise suppression. Tunnel device growth and issues in integrating it with other semiconductor devices and circuits will be discussed. A variety of MMIC applications such as VCOs, amplifiers, mixers, receivers, antennas, mm-wave radiometry and imaging applications, and A/D circuits will be presented. Circuit and system level specifications and considerations will be discussed.

WSD: Microwave Photonic Component, Integration and System Techniques for Broadband Fiber-fed Wireless

The explosive growth in communications has been driven by two complementary technologies: optical fiber and wireless communications. Fiber provides the massive bandwidth potential that has fueled the rise in Internet traffic, while wireless techniques confer mobility. The two technologies are starting to converge into fiber-radio systems, in which broadband services such as video on demand will be delivered over fiber to mm-wave picocells. In tandem with this, fiber communications is entering the era of Tb/s data rates.

This workshop will provide an overview of microwave photonic component technology and its system application in fiber-radio systems. It will begin with a tutorial introduction to fiber radio systems, followed by talks on state-of-the-art approaches to distribution of mm-waves over fiber and remote up-conversion techniques. Attention will then turn to the component integration technologies that will be needed for low cost fiber-radio modules, including: multichip modules, MMICs, OEICs and silicon micromachining/MEMs for passive fiber alignment.

WSE: Advanced LTCC Microwave Design and Manufacturing Issues

During the past few years, LTCC (Low Temperature Cofired Ceramics) has become an enabling technology for wireless applications from GSM, CDMA, TDMA, Bluetooth and Wireless LAN at the lower microwave frequency end up to the millimeter-wave region for such applications as LMDS at 30 GHz etc. This technology is able to provide cost-effective hardware solutions suitable for high volume manufacturing into multimillion production quantities. The LTCC circuit medium allows reduced development cycles and thus short time-to-market. It is capable of complexities up to systems in a package and has been demonstrated to be competitive in terms of excellent high frequency performance, high power handling, innovative compact 3D structures like baluns, couplers etc. and thus miniaturization.

Advanced LTCC issues include the use of mixed dielectric constants, low loss materials, photo patterned conductors, high density buried or passive circuit elements and the reach-out towards applications at 40 GHz and beyond.

The workshop will bring together contributors from LTCC design and manufacturing groups worldwide. It will focus on the still unsolved 3D multilayer design issues in close relation to volume manufacturing issues and the trends towards innovative materials, high resolution patterning, buried non-ideal ground planes, higher frequencies and improved thermal management.

WSH: Web-based RF and Microwave Education

Recent developments in information technology, in general, and Internet technology in particular are changing the functionality of our society, and are likely to change current education and continuing-education enterprise in profound ways. Today, the courses offered at various universities are often supplemented by a supporting Web site and continuing education is becoming increasingly Web-based. RF and microwave education and continuing education need to take advantage of these technological advances in order to (i) attract more students to RF and microwave areas, and (ii) to help young MTT-S members in their early career development through conveniently delivered continuing education. Recognizing the urgency of this need, MTT Society has sponsored development of multimedia educational tools at two US universities, and is planning a special issue and an electronically published supplement of IEEE Transactions on Microwave Theory and Techniques dedicated to "RF and Microwave Tutorials" in 2002. These are the first steps by MTT Society in making Web-based RF and microwave tutorials available to MTT-S members.

The goal of this workshop is to discuss what is available today in Web-based and Web-assisted RF and microwave education, what needs to be done, and how could educators in RF and microwave area could make use of Web technology for benefiting MTT-S membership. Participants are encouraged to bring a couple of viewgraphs to express their viewpoints and share their thoughts.

WSI: Advances in RF MEMS: Components, Packaging Techniques, Reliability and Microphonics

The MEMS area is quickly developing and new devices such as low loss phase shifters, high Q varactors, tunable filters, re-configurable antennas and low phase noise oscillators are being developed using this technology. The purpose of this workshop is to give the audience an overview of the latest results obtained in US and international laboratories and to emphasize the new research/development directions (packaging, reliability, power handling issues, Brownian noise, acceleration noise, etc.) needed for the success of this field.

The full day workshop will cover a wide range of areas, such as MEMS phase shifters, MEMS tunable filters, MEMS packaging techniques using MEMS switches and varactors. Also, the effect of Brownian, acceleration, and microphonic noise on MEMS circuits will be considered in this workshop. The workshop will conclude with a discussion on the reliability and failure modes of MEMS-based devices.

WSJ: Ferrite Devices and Materials for Millimeter-wave Applications

Improved phase shifters and nonreciprocal devices are required to support the increasing utilization of the mm-wave spectrum for commercial and defense applications. Existing defense applications, e.g. missile seekers, are typically narrow band and improvements are aimed at reduced cost, size and insertion loss. However, future high data rate (SATCOM and short-range) communications applications and army radars will require increased bandwidth and improved producibility. The properties, characterization and fabrication of mm-wave ferrite materials for mm-wave device applications will be reviewed. The development and applications of high power control components for wideband radar and satellite communications will be described. Compact mm-wave ferrite devices will require significant improvements in performance and integration into low cost RF packaging and planar phase shifter configurations suitable for LTCC fabrication will be discussed. Alternatives to ferrite devices are also under development and cooled semiconductors are candidates for some very high frequency non-reciprocal device applications. Ferroelectric materials and MEMS are also candidates for mm-wave phase shifters and their performance will be compared with the equivalent ferrite devices. Commercial and defense systems requirements for ferrite control components, the current state of the art, potential for future device and materials developments and comparisons with non-ferrite approaches will be reviewed in detail.

 

Monday, May 21, 2001


8:00 am­12:00 pm

WMF: High Density/Multilayer RF Interconnects

There is a growing need to reduce the size and cost of RFICs and highly integrated RF systems on a chip for smaller consumer products and to enable their insertion into microwave and millimeter-wave phased array antennas. To satisfy this goal, circuits and packages are now incorporating multiple layers of wiring. Furthermore, more functions than simple routing are being performed in these multilayer circuits through the incorporation of embedded passive elements and multiple interconnects between layers. This workshop will present the challenges, state of the art, and possibilities of multilayer circuits. Presentations will describe multilayer circuits fabricated with micromachined Si wafers, thin film technologies, and thick film technologies.

WMG: High Performance and Emerging Filter Technologies for Wireless

Wireless applications are growing at a tremendous rate and high-performance filters are an integral part of wireless communication systems. Evolution of existing filter technologies and new emerging filter technologies fundamentally influence system implementation. New third-generation wireless requirements are even more demanding than those in existing networks, in part because of the high data rates required for many envisioned applications, such as Internet access. This workshop begins by overviewing present and future filter requirements for wireless systems. Recent evolution of traditional filter technologies will be summarized, including dielectric, cavity, ceramic, waveguide, and SAW filters. New emerging filter technologies will be introduced and described, including microelectromechanical systems (MEMS), ferroelectric, micromachined (thin) film bulk-acoustic resonator (FBAR), and high temperature superconductive (HTS) filter technologies. Some aspects of the workshop will be tutorial. The goal is to provide an interactive forum in which the attendees gain a comprehensive understanding of the various filter technologies. At the conclusion of the workshop, a technology matrix will be presented to compare capabilities of the various technologies. A particular emphasis will be placed on changes to this matrix that have effectively occurred in the past three years. The matrix will include, for example, a comparison of SAW, ceramic, and FBAR technologies for wireless handset/mobile applications. The workshop will then close with an interactive discussion of the filter technology matrix


8:00 am­5:00 pm

WMA: Linearization for 3G Systems

3G systems are essential to provide more access to wireless communication with higher data rates. High data rates with Internet access are the objectives of these 3G systems. Modulation formats are needed with greater bandwidth efficiency and high data rates are required without losing phone capacity or features.

W-CDMA as well as EDGE for GSM systems are being developed to meet these challenges. With these 3G systems, more demands are being made on the linearity of systems to meet the specifications.

This workshop will first focus on the wideband CDMA and EDGE systems describing their operation and linearity requirements. Next the various linearization techniques will be described and compared. These include predistortion, feedback, and feed forward including DSP adaptive techniques. Other linearization issues will be discussed. Finally speakers will address the latest linearization methods for 3G systems showing implementation as well as results.

WMB: Statistical Design and Modeling Techniques for Microwave CAD

There have been extraordinary advances in EM-based modeling capabilities, mixed linear/nonlinear field/circuit simulation, applications of wavelets, and space mapping and knowledge based artificial neural network (ANN) technology for enhanced empirical modeling and CAD. These technologies address increased complexity of VLSI, RF and microwave circuits to fulfill the industrial demand for faster design cycle and reducing time to market for electronic products. Competition within the fast growing EDA market must lead to incorporation of these technologies in future releases of commercial software.

An objective of this workshop is a tutorial review of the state-of-the-art and discussion of implementable methodologies, strategies and software. It will be substantially physically and electromagnetically oriented. It will also highlight advances in ANNs as an unconventional alternative to modeling and design tasks in RF and microwave CAD. ANN computation is very fast and ANNs can learn and generalize from data allowing model development even when component formulas are unavailable. Initiatives in integration of ANN capabilities into circuit optimization, statistical design, global modeling, and computational electromagnetics are being made.

With the increase in geometrical and physical complexity of RF, microwave and high-speed digital circuits, techniques to improve the yield and reduce the design cycles continue to grow in importance. An objective of this workshop is to present the theory and application of statistical design tools applicable to RF/microwave circuit design, manufacturing and experimental research. By considering component tolerances in terms of a statistical distribution around the nominal value instead of a range, we can apply Monte Carlo methods and other optimization techniques over a large sample space. Thus, we can study the influence of random variations of significant factors and their interactions upon the circuit performance. Monte Carlo and space-domain statistical optimization techniques for yield maximization will be discussed.

We will consider characterization of random measurement errors, parametric effects and their interactions on the outcome of an experiment. A statistical design tool called Design of Experiments (DOE) provides a powerful methodology to systematically characterize the influence of main effects and their interactions. We will briefly cover the theory of DOE and apply it to some RF/microwave problems in the experimental arena.

WMC: ICs for 40 Gbit/s Data Rate Communications

Digital communications systems are already developing rapidly, and with the explosion in Internet and mobile phone traffic, the demand for high data rate links is likely to rise exponentially. Current high capacity trunk links use fiber-optic cables and data rates defined by the synchronous digital hierarchy (SDH) and synchronous optical network (SONET) systems. Most of these incumbent systems operate at STM-16 or 2.5 Gbit/s, with only the most recent systems operating at STM-64 or 10 Gbit/s data rates. The huge upsurge in demand means that bit rates in long-haul systems are expected to rise to STM-256 or 40 Gbit/s soon after the year 2000.

At these data rates the transmitted signal spectrum is extremely broadband and contains components from as low as 30 kHz, through microwave frequencies, up as high as mm-wave frequencies (40 GHz). This presents an interesting challenge to the IC designer who must multiplex up numerous low data rate signals into one 40 Gbit/s signal, drive the optical devices to send the signal down the optical fiber, amplify the detected signal at the far end, extract a clean clock signal and 40 Gbit/s data stream and de-multiplex it down into lower data rate signals. Digital engineers are challenged by the non square-wave shape of the high data rate signal and the need to consider transmission line effects, whilst analogue designers are challenged by jitter specifications and the need for time domain analysis.

The aim of this workshop is to debate the mixed-signal issues involved with integrated circuit design for 40 Gbit/s data rate communications systems, and expand on the technology and techniques being used by industry leaders within this field.

WMD: Advances in Ceramic Interconnect Technologies for Wireless, RF and Microwave Applications

The purpose of the workshop will be to acquaint engineers with the capabilities of ceramic technologies for realizing wireless and microwave circuits and systems. For the year 2001, increased emphasis will be placed on more advanced design techniques and applications.

The reason for running the workshop is that ceramic technologies are generally less familiar to design engineers and yet offer significant benefits in terms of circuit performance, weight and reliability. These benefits need to be communicated to design engineers to allow them to realize appropriate circuit and system solutions. Newer technologies are advancing these benefits further, while at the same time driving costs down.

WME: Ultra-High Speed ICs for Commercial Applications -- Present Status and Future Trends

The current worldwide trend is to exploit the ultrahigh transmission capacity of lightwave communication technology to meet the ever-increasing bandwidth demand of long haul communications as well as Internet traffic. A large number of industries and academic institutes are investing resources and efforts to increase the data rate in communication and signal processing systems. The bandwidth of the transmission is dictated by the high speed electronics, which are used for transmission, reception and switching.

The recent advancement in the various semiconductor technologies opened up the possibility to achieve the required multigigabit IC performance. While 10 Gbit/s systems are commercially deployed and 40 Gbit/s systems are demonstrated at the laboratory level, several research teams are working on 100 Gb/s and beyond.

This workshop will bring several experts from around the world working in this area of technology. The presentations will describe the latest information on design, fabrication, measurement, applications and product development.

The workshop will start with an overview of the ultra-high speed ICs for commercial applications. The speakers will then present multigigabit circuits implemented with various state-of-the-art integrated circuit technologies like, InP HBT, SiGe HBT, InP HEMT, etc. The workshop will also cover presentations on signal processing including multi GS/s analog-to-digital conversion, optical networking as well as switching VHSICs and embedding/MCM issues of multigigabit systems.


12:00­1:15 pm

PMA: RF CMOS for Bluetooth

Advances in IC technologies have brought new opportunities to the modern-day wireless industry. These include new wireless LAN methods such as 802.11a, Home RF, and Bluetooth. A new age of wireless LAN will be built on a combination of breakthroughs in wireless communication methods and RF processes. However, there are many challenges facing implementers of low-cost silicon RF solutions. The focus of this panel discussion will be on:

·         Technological barriers to implementing low cost transceivers. Is CMOS the right solution?

·         What is the most appropriate system partitioning for implementing Bluetooth in the cellular handset? Single Chip, Module, or an integrated component inside the transceiver baseband?

 

Tuesday, May 22, 2001


8:00­9:40 am

TU1A Techniques for System Level Nonlinear Analysis and Simulation

Chair: P. Draxler Co-chair: S. Kenney

Modern microwave communication systems continue to present challenges for predicting end-to-end performance parameters. The session investigates methods of nonlinear analysis and simulation for microwave systems and large microwave circuits driven by complex modulated signals.

TU1A-1:
Analysis of CDMA Spectral Regrowth and Waveform Quality
V. Aparin

TU1A-2:
Generalized Autocorrelation Analysis of Spectral Regrowth from Bandpass Nonlinear Circuits
K. Gard, L.E. Larson, M.B. Steer

TU1A-3:
Application of Polyspectral Techniques to Nonlinear Modeling and Compensation
C.P. Silva, A.A. Moulthrop, M.S. Muha, C.J. Clark

TU1A-4:
Estimation of Error Vector Magnitude using Two-tone Intermodulation Distortion Measurements
H. Ku, J.S. Kenney

TU1A-5:
Investigation of Behavioral Model Accuracy using a State-space and Convolution-based Transient Simulator
A. Zhu, T.J. Brazil

TU1A-6:
Efficient Circuit-level Analysis of Large Microwave Systems by Krylov-subspace Harmonic Balance
V. Rizzoli, A. Lipparini, D. Masotti, F. Mastri

TU1B Power Combiners/Dividers and Directional Couplers

Chair: C. Buntschuh

The continuing drive for smaller, and better passive components fosters the development of new techniques and processes for power dividers and directional couplers of smaller size, lower loss, and greater bandwidth, often with requirements for good phase balance and high power handling. This session presents several papers on multiport combiners in planar and waveguide technologies, as well as a miniaturized 180° hybrid and a high directivity LTCC coupler.

TU1B-1:
A Novel 3-way Hybrid Combiner/Divider for High Power Class C Microwave Amplifiers
M. Catoiu

TU1B-2:
A Novel Design of 1 to 8 Power Divider/Combiner
X. Jiang, S. Ortiz, A. Mortazawi

TU1B-3:
A Low Loss Serial Power Combiner using Novel Suspended Stripline Couplers
Y. Tahara, H. Oh-hashi, T. Ban, K. Totani, M. Miyazaki

TU1B-4:
A Compact Coaxial Waveguide Combiner Design for Ultra-broadband Power Amplifier
P. Jia, R.A. York

TU1B-5:
Broadband Lumped-element 180° Hybrids Utilizing Lattice Circuits
K. Tadashi, K. Yoshihio, O. Isao

TU1B-6:
Design of High Directivity Directional Couplers in Multilayer Ceramic Technologies LTCC/HTCC
S. Al-taei, P. Lane, G. Passiopoulos

TU1C Microwave Photonics

Chair: P. Yu Co-chair: E. Rezek

The rapidly increasing demand on bit rate has led to enhancements in the enabling microwave photonic components. This session highlights several very exciting technology and subsystem developments. The opening paper demonstrates an unique 3-dimensional integration of photonic components on a silicon substrate. This is followed by a series of papers that focus on components and component integration for signal generation and detection, including the direct opto-electronic generation of mW level millimeter-wave signals without the need for any electrical amplification. The session closes with the description of a novel application of semiconductor optical amplifiers to minimize dispersion effects in RF/mm-wave optical links.

TU1C-1:
Three-dimensional Millimeter-wave Photonic Integrated Circuits on Si
T. Minotani, Y. Royter, H. Ishii, A. Hirata, K. Machida, A. Sasaki, T. Nagatsuma

TU1C-2:
Widebandwidth Traveling-wave InGaAsP/InP Electroabsorption Modulator for Millimeter-wave Applications
G. Li, W.S. Chang, P.K. Yu, S.A. Pappert, C.K. Sun

TU1C-3:
High Power Photonic Microwave Generation at K- and Ku-bands using a Uni-traveling-carrier Photodiode
H. Ito, H. Fushimi, Y. Muramoto, T. Furuta, T. Ishibashi

TU1C-4:
Direct Opto-electronic Synthesis of mW-level Millimeter-wave Signals using an Optical Frequency Comb Generator and a Uni-traveling-carrier Photodiode
S. Fukushima, Y. Muramoto, C.F. Silva, A.J. Seeds

TU1C-5:
Photodetection, Photonic Feeding Coplanar Patch Antenna and Transmitting Experiment for Radio-on-fiber System
K. Li, M. Izutsu

TU1C-6:
Experimental Reduction of Dispersion-induced Effects in Microwave/Millimeter-wave Optical Systems Employing SOA Boosters
F. Ramos, J. Herrera, J. Marti

TU1D Frequency Converters

Chair: M. Madihian Co-chair: L. Reynolds

This session highlights application of Si CMOS, Si BJT utilizing 3-D techniques, pHEMT and heterojunction interband tunnel diodes to frequency converters, mixers, doublers and triplers ranging from low microwave to millimeter wave frequencies are presented.

TU1D-1:
RF Mixers using Standard Digital CMOS 0.35 mm Process
V. Geffroy, G. De Astis, E. Bergeault

TU1D-2:
Broadband and Compact Si BJT Balanced Up-converter MMIC using Si 3-D MMIC Technology
K. Nishikawa, T. Nakagawa, B. Piernas, K. Araki, K. Kamogawa

TU1D-3:
A Highly Linear Single Balanced Mixer Based on Heterojunction Interband Tunneling Diode
A. Cidronali, G. Collodi, G. Manes, C. Toccafondi, M. Deshpande, N. El-Zein, H. Goronkin, V. Nair

TU1D-4:
A 60 GHz Uniplanar MMIC 4X Subharmonic Mixer
M.W. Chapman, S. Raman

TU1D-5:
A Monolithic HEMT Diode Balanced Mixer for 100-140 GHz
M. Morgan, S. Weinreb

TU1D-6:
A Full Waveguide Band MMIC Tripler for 75-110 GHz
M. Morgan, S. Weinreb

TU1D-7:
High Gain PHEMT Frequency Doubler for 76 GHz Automotive Radar
A. Werthof, H. Tischer, T. Grave

TU1D-8:
A Stability Ensuring Design Approach for Frequency Triplers
B. Bunz, G. Kompa

TU1D-9:
A Family of Q, V and W-band Monolithic Resistive Mixers
M. Kimishima, T. Ataka, H. Okabe

TU1E Smart Antennas

Chair: M. Thursby Co-chair: B. Perlman

Antennas that utilize advanced array technology to improve performance through adaptive beam forming, increased functionality, and optimized configuration are know as smart antennas.

TU1E-1:
A Novel Planar Array Smart Antenna System with Hybrid Analog-digital Beamforming
S. Jeon, Y. Wang, Y. Qian, T. Itoh

TU1E-2:
Digital Beamforming for Smart Antennas
T.W. Nuteson, G.S. Mitchell

TU1E-3:
Smart Lens Antenna Arrays
J.E. Vian, Z. Popovic

TU1E-4:
Adaptive Beamforming of ESPAR Antenna using Sequential Perturbation
J. Cheng, Y. Kamiya, T. Ohira

TU1E-5:
Microwave Device Combining Filtering and Radiating Functions for Telecommunication Satellites
H. Blondeaux, D. Baillargeat, P. Leveque, S. Verdeyme, P. Vaudon, P. Guillon, A. Carlier, Y. Cailloce

TU1E-6:
An Internet Controlled Calibration System for TDMA Smart Antenna Wireless Base Stations
J.H. Sinsky

TU1F Biological Effects and Medical Applications

Chair: J. Pribetich Co-chair: P. Yu

This year's session on biological effects and microwave and millimeter-wave application includes the most diverse topics in many years. The studies reported on the investigation of the temperature profiles in the human head as a result of use of cellular telephones. Also included are reports on fundamental research describing the effect of low-intensity radio-frequency on calcium binding and related potassium channel behaviour. In addition, new and improved microwave and millimeter wave applications such as sensing DNA hybridization, sensing of vital signs, microwave radiometer, and planar strip array antenna for MRI allowing significant reduction in scan time will be discussed.

TU1F-1:
Temperature Rise for the Human Head for Cellular Phones and for Peak SARs Prescribed in Safety Guidelines
O.P. Gandhi, Q. Li, G. Kang

TU1F-2:
Power Absorption and Temperature Elevations Induced in the Human Head by Dual-band Phones
P. Bernardi, M. Cavagnaro, S. Pisa, E. Piuzzi

TU1F-3:
Miniature Sensor for Measurement and Control of Temperatures by Microwave Radiometry in Medical Applications
C. Vanoverschelde, L. Dubois, V. Thomy, J. Sozanski, J. Camart, M. Chive, J.P. Pribetich

TU1F-4:
Analysis of Planar Strip Array Antenna for MRI
R.F. Lee, C.R. Westgate

TU1F-5:
Resonant Slot Antennas as Transducers of DNA Hybridization: A Computational Feasibility Study
C. Wichaidit, J.R. Peck, Z. Lin, R.J. Hamers, S.C. Hagness, D.W. van der Weide

TU1F-6:
A Zeeman-Stark/Markov Model Approach to Study the EM Exposure of a Potassium Channel
S. Bruna, S. Giordano, E. Moggia, B. Bianco, M. Liberti, G. D'Inzeo

TU1F-7:
Non-invasive Measurement of Blood Sugar Level by Millimeter-waves
Y. Nikawa/Yoshio, D. Someya/Daisuke

TU1F-8:
A Microwave Radio for Doppler Radar Sensing of Vital Signs
A.D. Droitcour, V.M. Lubecke, J. Lin, O. Boric-Lubecke


10:10­11:50 am

Plenary Session
Symphony Hall

10:10     Opening Presentation

10:15     Welcoming Remarks Samir El-Ghazaly, IMS General Chair

10:20     Welcoming Remarks Lattie Coor, President, Arizona State University

10:25     MTT Society Welcome Charles Jackson, 2001 MTT President

10:30     Technical Program Overview Vijay Nair, MS TPC Chair

10:35     IEEE Awards Bruce Eisenstein, 2000 IEEE President

2001 IEEE Electromagnetics Award
2001 Fellow Awards

11:15     Keynote Address Dennis Roberson, Chief Tech. Officer, Motorola Inc.

12:00     Break for Lunch

12:10     Buffet Lunch, Symphony Hall Terrace


12:00­1:15 pm

PTA: One Chip Radio

What is one-chip radio? Is this a reality in today's technology or in the future? Where is the System on Chip (SOC) appropriate: WLAN, CDMA, Bluetooth or ever? What module technologies, if any, will provide System on Package (SOP) solutions? This panel will debate the potential of these integration paradigms from various perspectives including:

·         Technology mix: RF, MEMS, passive components, DSPs and sensors

·         Time to market, yield and cost

·         Device technologies: SiGe, GaAs, CMOS and BiCMOS

·         Reusable functional blocks

·         Integral and embedded passive components

·         System architectures and testing

·         On-chip and off-chip components

·         Communication standards and frequency

·         Applications and examples of SOC and SOP


1:20­3:00 pm

TU3B Baluns, Spiral Inductors and Resonators

Chair: A. Fathy Co-chair: George Ponchak

High Q compact spiral inductors, low loss wideband baluns, and highly stable dielectric resonators are widely used passive components. In this session, first, a high Q compact integrated inductor utilizing a ferrite sandwiched structure is presented, followed by an inductor fabricated using a novel 3-D GaAs technology where the inductor has a 4.9 nH inductance and a relatively high Q of 35.97 at 8.07 GHz, and then the results of the development of a vertical planar inductor using a novel plasma deformation magnetic assembly technique will be presented. Second, new ideas for low loss, wideband baluns that include graphical design methodology of an air gap stacked Marchand balun will be demonstrated. Third, a novel high Q stable dielectric resonator that has the potential of substantially improving the close-in carrier phase noise of low-noise oscillators will be discussed in detail.

TU3B-1:
Sandwich Type Ferromagnetic RF Integrated Inductor
M. Yamaguchi, M. Baba, K. Arai

TU3B-2:
Improved Three-dimensional GaAs Inductors
B. Piernas, K. Nishikawa, T. Nakagawa, K. Araki, K. Kamogawa

TU3B-3:
Development of Vertical Planar Coil Inductors using Plastic Deformation Magnetic Assembly (PDMA)
J. Zou, J.G. Nickel, D. Trainor, C. Liu, J.E. Schutt-Aine

TU3B-4:
A Low Loss Planar Microwave Balun with an Integrated Bias Scheme for Push-pull Amplifiers
J. Lee, K.J. Webb

TU3B-5:
Graphical Design of Air-gap Stacked Marchand Balun
G. Ryu, D. Kim, J. Lee, K. Seo

TU3B-6:
High Q Frequency Stable Dual-mode Whispering Gallery Sapphire Resonator
M.E. Tobar, E.N. Ivanov, J.G. Hartnett, D. Cros

TU3C MEMS for Antenna Applications

Chair: S. Barker Co-chair: T. Weller

Low cost filters with high RF performance and mass production capability are focused in this session. Dual/Triple mode filters reduce the size and can easily realize quasi-elliptic response. The session provides novel designs and applications and covers the important frequency ranges from mobile bands to Ka-band.

TU3C-1:
2-D Mechanical Beam Steering Antenna Fabricated using MEMS Technology
C. Baek, S. Song, Y. Kim, Y. Kwon, C. Cheon

TU3C-2:
Microelectromechanical Systems (MEMS) Actuators for Antenna Reconfigurability
R.N. Simons, D. Chun, L.P. Katehi

TU3C-3:
2 and 4-bit DC-16 GHz Microstrip MEMS Distributed Phase Shifters
J.S. Hayden, G.M. Rebeiz, A. Malczewski, J. Kleber, C.L. Goldsmith

TU3C-4:
MEMS X-band Low Loss Quad Time Delay Unit
H.N. Fudem, L. Chen, R.J. March, R.C. Tranchini, D.E. Crockett, J.W. Gipprich, J.E. Kositz, G.K. Sinon

TU3C-5:
Lifetime Characterization of Capacitive RF MEMS Switches
C. Goldsmith, J. Ehmke, A. Malczewski, B. Pillans, S. Eshelman, Z. Yao, J. Brank, M. Eberly

TU3D Control Devices

Chair: M. Goldfarb Co-chair: S. Brozovich

A wide range of control devices are presented. The applications span the range from cellular/PCS/3G bands through 76 GHz. The functional blocks included switches, phase shifters, and limiters featuring novel circuit techniques.

TU3D-1:
A Novel Digital Phase Shifter Design at X-band
J. Zhang, S. Ortiz, A. Mortazawi

TU3D-2:
An Ultra Broad Band Reflection Type 180° Phase Shifter with Series and Parallel LC Circuits
K. Miyaguchi, M. Hieda, K. Nakahara, M. Kasahara, T. Takagi, H. Kurusu, M. Nii

TU3D-3:
A High Performance GaAs SP3T Switch for Digital Cellular Systems
Z. Gu, S. Zhang, D. Johnson, S. Belletete, M. Ayvazian, D. Fryklund

TU3D-4:
High Isolation V-band SPDT Switch MMIC for High Power Use
T. Shimura, Y. Mimino, K. Nakamura, Y. Aoki, S. Kuroda

TU3D-5:
Switches with Capacitor Cancelled Parasitic Inductance of FET
K. Kazuhiko, K. Miyaguchi, M. Hieda, T. Takagi, H. Kurusu

TU3D-6:
A V-band MMIC SPDT Passive HEMT Switch using Impedance Transformation Networks
Y. Wang, K. Lin, H. Wang, D. Niu

TU3E Phased Array Antennas

Chair: K. Chang Co-chair: R. Sudbury

Innovative techniques are being applied to phased array antenna design to achieve high performance and reduced cost. This session will present several novel concepts and interesting implementations.

TU3E-1:
New Phase Shifter and Phased Antenna Array Designs Based on Ferroelectric Materials and CTS Technologies
M.F. Iskander, Z. Zhang, Z. Yun, R. Isom, M. Hawkins, R. Emrick, B. Bosco, J. Synowczynski, B. Gersten

TU3E-2:
A Bi-directionally Steering Phased Array Antenna Controlled by Dual Piezoelectric Transducers
T. Yun, K. Chang

TU3E-3:
A Novel Millimeter-wave Beam-steering Technique using a Dielectric-image-line-fed Grating Film
C.T. Rodenbeck, M. Li, K. Chang

TU3E-4:
A Method for Determining Noise Coupling in a Phased Array Antenna
J.P. Peeters Weem, A. Popovic

TU3E-5:
Performance of Thinned Antenna Arrays using Nonlinear Processing in DBF Radar Applications
C. Metz, L.C. Stange, A.F. Jacob, E. Lissel


2:30­5:00 pm

TUIF Interactive Forum

TUIF-1:
LDMOS Electro-thermal Model Validation from Large-signal Time-domain Measurements
R. Gaddi, J. Benedikt, P.J. Tasker, J.A. Pla

TUIF-2:
Tunnel Diode Non-linear Model for Microwave Circuits and Active Antennas
M.R. Deshpande, V. Nair, N. El-Zein, H. Goronkin, K. Liu, S.M. El-Ghazaly, A. Cidronali, G. Manes

TUIF-3:
A Simple Bias Dependent LF Noise Model for CAD
I.M. Angelov, R.S. Kozhuarov, H.H. Zirath

TUIF-4:
Temperature-dependent Modeling of High Power MESFET using Thermal FDTD Method
W. Wojtasiak, D. Gryglewski

TUIF-5:
Full Wave Analysis of FET Fingers using Various Semiconductor Physical Models
S. Goasguen, M. Tomeh, S. El-Ghazaly

TUIF-6:
Generation of Multicarrier Complex Low Pass Models of RF ICs
P. Dobrovolny, P. Wambacq, G. Vandersteen, S. Donnay, M. Engels, I. Bolsens

TUIF-7:
A Measurement Based Distributed Low Frequency Noise HEMT Model: Application to Design of Millimeter-wave Automotive Radar Chip Sets
A. Laloue, A. Lyoubi, J. Nallatamby, M. Prigent, J. Obregon, M. Camiade

TUIF-8:
Pulse Characterization of Trapping and Thermal Effects of Microwave GaN Power FETs
S. Augaudy, R. Quéré, J. Teyssier, M. di Forte Poisson, S. Cassette, B. Dessertenne, S. Delage

TUIF-9:
Thermal Transients in Microwave Active Devices and Their Influence on Intermodulation Distortion
S. David, W. Batty, A.J. Panks, R.G. Johnson, C.M. Snowden

TUIF-10:
A Krylov-subspace Technique for the Global Stability Analysis of Large Nonlinear Microwave Circuits
V. Rizzoli, E. Furini, A. Costanzo, F. Mastri

TUIF-11:
Two-tone Intermodulation Distortion Simulations in the Time Domain using a Quasi-2D Physical pHEMT Model
P.J. Rudge, R. Miles, C. Snowden, M. Steer

TUIF-12:
Nonlinear Analysis of a Microwave Synthesizer Based on a Sampling-phase Detector
S. Sancho, S. Ver Hoeye, A. Suarez, J. Chuan, A. Tazon

TUIF-13:
Comparison of Wavelet- and Time-marching-based Microwave Circuit Transient Analyses
C.E. Christoffersen, M.B. Steer

TUIF-14:
Efficient Algorithm for Steady-state Stability Analysis of Large Analog/RF Circuits.
P. Bolcato, C.S. Rumolo, R. Larcheveque, J. Nallatamby, M.A. Prigent, J.J. Obregon

TUIF-15:
Novel Artificial Frequency Mapping Techniques for Multi-tone Simulation of Mixers
N.B. de Carvalho, J.C. Pedro

TUIF-16:
New System-level Simulation of Noise Spectra Distortion in FM-CW Autonomous Cruise Control Radars.
A. Laloue, J. Nallatamby, M. Prigent, J. Obregon, M. Camiade

TUIF-17:
Spectrum Management of Pulse Transmission Line by High Cut Filter using Magnetic Loss
T. Miura, S. Nakagawa

TUIF-18:
Null Pattern Synthesis of Ferroelectric Smart Antennas
J. Modelski, Y. Yashchyshyn

TUIF-19:
Ferroelectric Thin-film Based Electrically Tunable Ku-band Coplanar Waveguide Components
G. Subramanyam, N. Mohsina, A.A. Zaman, F.W. Van Keuls, R.R. Romanofsky, F.A. Miranda, J.D. Warner

TUIF-20:
Performance and Modeling of Saw Tooth Edge Mode Isolators
A.H. Aly, B. Elsharawy

TUIF-21:
Possibility of Ultra Fine Isolator for Portable Phone
S. Takdeda, Y. Kishimoto, H. Itoh, K. Ichikawa

TUIF-22:
Modeling Coplanar Waveguide Structures Constructed of Ferromagnetic Metal
N. Cramer, D.K. Walker

TUIF-23:
Planar Ka-band High Temperature Superconducting Filters for Space Applications
C. Lascaux, F. Rouchaud, V. Madreangeas, M. Aubourg, P. Guillon, B. Theron, M. Maignan

TUIF-24:
Multi-stage Dual-mode Cross-slotted Superconducting Filters for Telecommunication Application
A. Cassinese, R. Vaglio, M. Barra, G. Panariello

TUIF-25:
Design of an Image-type Dielectric Resonator to Measure Surface Resistance of a High TC Superconductor Film
Y. Kobayashi, T. Hashimoto

TUIF-26:
Planar Superconducting Lumped Element Bandpass Filter with Spiral Inductors
A.E. Barinov, S.A. Zhgoon

TUIF-27:
Performance of a Superconducting Detector Circuit using a Schottky Barrier Diode for Bandwidth Modulation
M.W. Hosking

TUIF-28:
Bias Circuits for GaAs HBT Power Amplifiers
E. Jarvinen, S. Kalajo, M. Matilainen

TUIF-29:
High Efficiency Low IM Microwave PA Design
P. Colantonio, F. Giannini, E. Limiti, G. Leuzzi

TUIF-30:
Highly Linear CMOS RF MMIC Amplifier using Multiple Gated Transistors and its Volterra Series Analysis
B. Kim, K. Lee, J. Ko

TUIF-31:
A Novel High Efficiency Multioctave Amplifier using Cascaded Reactively Terminated Single-stage Distributed Amplifiers for EW System Applications
A.S. Virdee, B.S. Virdee

TUIF-32:
A 2.4 GHz Integrated CMOS Power Amplifier with Micromachined Inductors
E. Chen, Y. Yoon, J. Laskar, M. Allen

TUIF-33:
Monolithic 6W Ka-band High Power Amplifier.
R.M. Emrick

TUIF-34:
A Novel Method for Closed-loop Error Correction Microwave and Millimeter-wave QPSK Modulator
A. Madjar, T. Blum, M. Namer, I. Itzkovic, B. Zusmanovic

TUIF-35:
Micromachined Sub-millimeter and Millimeter-wave Variable Polarisation Compensator
T.D. Drysdale, R.J. Blaikie, H.M. Chong, D.R. Cumming

TUIF-36:
Membrane-supported Copper E-plane Circuits
W. Liu, D.P. Steenson, M.B. Steer

TUIF-37:
Suppression of Parasitic Substrate Modes in Flip-chip Packaged Coplanar W-band Amplifier MMICs
A. Tessmann, W.H. Haydl, S. Kudszus, T.V. Kerssenbrock, P. Heide

TUIF-38:
A 60 GHz Circular Horn Antenna Excited with Quasi-Yagi Antenna
M. Sironen, Y. Qian, T. Itoh

TUIF-39:
Design of a Nonradiative Dielectric Rotman Lens in the Millimeter-wave Frequency
J. Lee, J. Lee, H. Tae

TUIF-40:
Nonlinear Distortion Suppression in Directly Modulated DFB Lasers by Sidemode Optical Injection
S. Jun-Hyuk/Seo, S. Young-Kwang/Seo, C. Woo-Young/Choi

TUIF-41:
A New, Compact Model for High Speed Electro-optic Modulators Fully Integrated Within a Microwave CAD Environment
P. Zandano, M. Pirola, G. Ghione

TUIF-42:
Electromagnetic and Thermal Modeling of the Lucite Cone Applicator for Superficial Hyperthermia
T. Samaras, J.N. Sahalos, P.J. Rietveld, G.C. van Rhoon

TUIF-43:
Conformal Imaging with a Non-contacting Microwave Antenna Array
D. Li, P.M. Meaney, K.D. Paulsen

TUIF-44:
A Low Power Direct Conversion Receiver Module for C-band Wireless Applications
B. Matinpour, A. Sutono, J. Laskar

TUIF-45:
A GaAs HBT 5.8 GHz OFDM Transmitter MMIC Chip Set
A. Raghavan, E. Gebara, C. Lee, S. Chakraborty, D. Mukherjee, J. Bhattacharjee, D. Heo, J. Laskar

TUIF-46:
A 2.5 V CMOS Differential Active Inductor with Tunable L and Q for Frequencies up to 5 GHz
M. Grözing, A. Pascht, M. Berroth

TUIF-47:
Temperature Dependence of Intermodulation and Linearity in GaN Based Amplifiers
A. Ahmed, S. Islam, M. Anwar

TUIF-48:
A New 'T' Circuit Topology for the Broadband Modeling of Symmetric Inductors Fabricated in CMOS Technology
W. Tatinian, P. Pannier, R.A. Gillon

TUIF-49:
Modeling of Inductors and Transformers
S.R. Kythakyapuzha, W.B. Kuhn

TUIF-50:
15 GHz Wideband Amplifier with 2.8 dB Noise Figure in SiGe Bipolar Technology|
H. Knapp, D. Zoeschg, T. Meister, K. Aufinger, S. Boguth, L. Treitinger

TUIF-51:
40-Gbit/s D-type Flip-flop and Multiplexer Circuits using InP HEMT
T. Suzuki, H. Kano, Y. Nakasha, T. Takahashi, K. Imanishi, H. Ohnishi, Y. Watanabe

TUIF-52:
A Direct Ku-band Linear Subharmonically Pumped BPSK and I/Q Vector Modulator in Multi-layer Thin-film MCM-D
G. J. Carchon, B. Nauwelaers, K.U.Leuven


3:30­5:10 pm

TU4A Low Noise Amplifiers (LNAs)
Joint IMS/RFIC Session

Chair: S. Lloyd Co-chair: K. Ashby

This session covers building block LNAs for mobile communications using a range of advanced technologies

TU4A-1:
A Wide Dynamic Range Switched-LNA in SiGe BiCMOS
T. Nakatani, J. Itoh, I. Imanishi, O. Ishikawa

TU4A-2:
Dual Bias Feed SiGe HBT Low Noise Linear Amplifier
E. Taniguchi, K. Maeda, N. Suematsu, T. Takagi, T. Ikushima, K. Sadahiro, K. Itoh

TU4A-3:
A 1.4 dB NF Variable Gain LNA with Continuous Control for 2 GHz-band Mobile Phone using InGaP Emitter HBT
Y. Aoki, M. Fujii, H. Dodo, H. Hida, S. Ohkubo, S. Yoshida, T. Niwa, Y. Miyoshi, N. Goto

TU4A-4:
A 1.7 mA Low Noise Amplifier with Integrated Bypass Switch for Wireless 0.05-6 GHz Portable Applications
H. Morkner, M. Frank, S. Yajima

TU4B Innovative Structures

Chair: J. Owens

This session looks at a number of novel and inovative passive components and structures. The first paper investigates circuit design techniques to minimize the effect of the variation of material permittivity on electrical performance. The second paper looks at a new technique for realizing a 360° Analog Phase Shifter at 5.2 GHz. The next paper is concerned with the development of a periodic slow wave structure in CPW for filter applications. The fourth paper is concerned with compact branch line couplers and stubs in CPW at Ka/K band. Finally a LTCC balun for applicaton in Bluetooth systems is presented.

TU4B-1:
Passive Electromagnetic Compensation of Permittivity Changes in Microwave Circuits
J. Hesselbarth, R. Vahldieck

TU4B-2:
360° Linear Analog Phase Shifter Design using Tunable Short-circuit Terminated Combline Filters
S. Shin, R.V. Snyder, E. Niver

TU4B-3:
A Novel Low Loss Slow-wave CPW Periodic Structure for Filter Applications
J. Sor, Y. Qian, T. Itoh

TU4B-4:
Overlapping, Multiple CPW Stub Structures for High Density MMICs
K. Hettak, C.J. Verver, M.G. Stubbs

TU4B-5:
LTCC-MLC Balun for WLAN/Bluetooth
C. Tang

TU4C MEMS Control Circuits

Chair: C. Goldsmith Co-chair: C. Nguyen

This session covers recent developments in RF MEMS circuits for control applications. These papers demonstrate the insertion of RF MEMS technology to low loss control circuits which will improve microwave system performance. Presented papers include important demonstrations in the areas of high performance switch networks, antenna tuners, and micromachined filters/resonators.

TU4C-1:
MEMS Single-pole Double-throw (SPDT) X and K-band Switching Circuits
S.P. Pacheco, D. Peroulis, L. Katehi

TU4C-2:
DC-26 GHz MEMS Series-shunt Absorptive Switches
G. Tan, G.M. Rebeiz

TU4C-3:
MEMS High Q Microwave Inductors using Solder Surface Tension Self-assembly
G.W. Dahlmann, E.M. Yeatman, P.R. Young, I.D. Robertson, S. Lucyszyn

TU4C-4:
Micromachined Frequency-variable Impedance Tuners using Resonant Unit Cells
S. Jung, K. Kang, J. Park, Y. Kim, Y. Kwon, K. Chung

TU4C-5:
A Reconfigurable Double-stub Tuner using MEMS Devices
K.L. Lange, J. Papapolymerou, C.L. Goldsmith, A. Malczewski, J. Kleber

TU4C-6:
Tunable Lumped Components with Applications to Reconfigurable MEMS Filters
D. Peroulis, S. Pacheco, K. Sarabandi, L.P. Katehi

TU4C-7:
A Micromachined Tunable CPW Resonator
T. Ketterl, T. Weller, D. Fries

TU4D Acoustic Devices for Wireless Communications and Sensing

Chair: R. Weigel Co-chair: C.C.W. Ruppel

This Focused Session deals with surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices for wireless applications. An Invited Paper reports on novel SAW solutions for wideband CDMA mobiles followed by the demonstration of a SAW-based passive wireless pressure and temperature sensor system for vehicular applications, a new SAW resonator technique for wideband VCOs, and an investigation of thin films to improve SAW device fidelity. The BAW part of the session incorporates two contributions dealing with a film bulk acoustic wave resonator (FBAR) duplexer for PCS applications and the characterization and simulation of FBAR devices.

TU4D-1:
Invited: SAW Filter Solutions to the Needs of 3G Cellular Phones
G. Fischerauer, T. Ebner, P. Kruck, K. Morozumi, R. Thomas, M. Pitschi

TU4D-2:
Optimized Design and Fabrication of a Wireless Pressure and Temperature Sensor Unit Based on SAW Transponder Technology
G. Schimetta, R. Weigel, F. Dollinger, G. Scholl

TU4D-3:
Spurious Suppression Technique of Edge-trap-type SAW Resonators and Their Applications to 1 GHz Wideband SAW-VCOs for Mobile Communications
T. Kachi, A. Isobe, K. Asai, M. Hikita, A. Sumioka

TU4D-4:
The Application of Dielectric Thin Films to Enhance the Properties of SAW Devices
F.S. Hickernell

TU4D-5:
A Film Bulk Acoustic Resonator (FBAR) Duplexer for USPCS Handset Applications.
P.D. Bradley, R. Ruby, Y. Oshmyansky,
J.D. Larson

TU4D-6:
FBAR Dispersion Relation and Laser Measurements
P.T. Tikka, G.G. Fattinger

TU4E Novel Antennas and Applications

Chair: W. Shiroma Co-chair: D. McQuiddy

Recent advances in reconfigurable, multi-layer, and multifunctional antennas are presented. The papers to be presented cover a variety of new techniques with calculated and experimental results.

TU4E-1:
Silicon Based Reconfigurable Antennas
A.E. Fathy, A. Rosen, H. Owen, S. Kanamaluru, F. Mcginty, D. Mcgee, G. Taylor, P.K. Swain, S. Perlow, M. ElSherbiny

TU4E-2:
Hilbert Curve Fractal Antennas with Reconfigurable Characteristics
K.J. Vinoy, K.A. Jose, V.K. Varadan, V.V. Varadan

TU4E-3:
Active Antenna using Multi-layer Ceramic-polyimide Substrates for Wireless Communication Systems
T. Seki, H. Yamamoto, T. Hori, M. Nakatsugawa

TU4E-4:
A Ka-band High Efficiency Dielectric Lens Antenna with a Silicon Micromachined Microstrip Patch Radiator
U. Sangawa, K. Takahashi, H. Yabuki, T. Urabe, H. Ogura

TU4E-5:
A Multifunctional Antenna for Terrestrial and Satellite Radio Applications
S.M. Lindenmeier, J.F. Luy, P. Russer

 

Wednesday, May 23, 2001


8:00­9:40 am

WE1A Mode Conversion between Dissimilar Transmission Media

Chair: C.P. Wen Co-chair: E. Godshalk

In this session, a wide variety of transitions between different transmission structures are described. Included are microstrip, coplanar waveguide(CPW), coplanar strip(CPS), nonradiative dielectric guide (NRD), and rectangular waveguide. Some transitions feature very broad-bandwidth operation.

WE1A-1:
Novel Design for Coplanar Wave Guide to Microstrip Transition
A.M. Safwat, K.A. Zaki, C.H. Lee, W.B. Johnson

WE1A-2:
Microstrip Fed Coplanar Stripline Tee Junction using Coupled Coplanar Stripline
Y. Suh, K. Chang

WE1A-3:
Novel Lumped-element Coplanar Waveguide-to-coplanar Stripline Transitions
Y. Lin, C. Chen

WE1A-4:
Integrated Transition of Coplanar and Rectangular Waveguides
D. Deslandes, K. Wu

WE1A-5:
A Novel Microstrip Mode to Waveguide Mode Transformer and Its Applications
N. Jain, Anokiwave, N. Kinayman

WE1A-6:
Design of HNRD Guide to E-plane Waveguide Transitions and Directional Couplers by Transverse Resonance Technique
M. Kishihara, K. Yamane, I. Ohta

WE1B High Power Amplifiers and Devices

Chair: J. Schellenberg Co-chair: S. Patel

This session presents recent advances in high power device and amplifier technology at frequencies ranging from UHF to Ku-band. The first three papers focus primarily on advances in device technology: a high voltage (27V) GaAs HBT operating at 2 GHz, an InGaAs pHEMT device operating at 3.5 GHz with an output power of 10 W PEP and new SiC device and amplifier results at UHF and L-band. The fourth and fifth papers present high power amplifiers designed for W-CDMA base station applications. Both papers use a push-pull amplifier configuration and demonstrate output power levels of 240 and 300 W respectively. The final two papers in this session illustrate advances in amplifier integration such as a 1.9 kW amplifier operating at 2.7 to 2.9 GHz, and a Ku-band power amplifier for the Stentor satellite.

WE1B-1:
High-voltage GaAs Power HBTs for Basestation Amplifiers
P. Kurpas, F. Brunner, R. Doerner, B. Janke, P. Heymann, A. Maasdorf, J. Würfl, W. Heinrich, W. Doser, H. Blanck, P. Auxemery, D. Pons

WE1B-2:
A Power PHEMT Device Technology for Broadband Wireless Access
M. Miller, B. Peatman, R. Hooper

WE1B-3:
Silicon Carbide Performances and Application in Broadcast Power Amplifiers
F. Temcamani, P. Pouvil, C. Brylinski, P. Bannelier, B. Darges, J. Prigent

WE1B-4:
A 240 W Power Heterojunction FET with High Efficiency for W-CDMA Basestations
I. Takenaka, K. Ishikura, K. Takahashi, K. Hasegawa, H. Takahashi, F. Emori, N. Iwata, K. Kishi, Y. Ogasawara

WE1B-5:
A Ultra Broad Band 300 W GaAs Power FET for W-CDMA Basestations
K. Ebihara, K. Inoue, H. Haematsu, F. Yamaki, H. Takahashi, J. Fukaya

WE1B-6:
High Power S-band Solid-state Amplifiers for Surveillance and Traffic Control Radars
T. Murae, K. Fujii, T. Matsuno

WE1B-7:
Ku-band Quadri-SSPA for Stentor Satellite Transmit Active Antenna
D. Roques, H. Chane-Kee-Sheung, F. Dubos, B. Cogo, J. Cazaux

WE1C Non-linear Device Modeling

Chair: J Hwang

This session features non-linear device modeling, addressing HBT, electrothermal, and GaN devices.

WE1C-1:
Nonlinear III-V HBT Compact Models: Do We Have What We Need?
J.B. Scott

WE1C-2:
Global Electro-thermal CAD of Complex Non Linear 3-D Systems Based on a Fully Physical Time-dependent Compact Thermal Model
W. Batty, S. David, A.J. Panks, R.G. Johnson, C.M. Snowden, C.E. Christoffersen, M.B. Steer

WE1C-3:
Improved Large-signal Model and Model Extraction Procedure for InGaP/GaAs HBTs Under High Current Operations
S. Cherepko, M. Shirokov, J.C. Hwang, A. Brandstaedter

WE1C-4:
Waveform Characterization and Modeling of Dynamic Charge Behavior of InGaP-GaAs HBTs
C. Wei, S. Sprinkle, H. Chung, B. Mitchell, P. Dicarlo, D. Bartle, J. Hu

WE1C-5:
Scalable Large-signal Device Model for High Power-density AlGaN/GaN HEMTs on SiC
J. Lee, S. Lee, K.J. Webb

WE1C-6:
On the Gunn Effect in GaAs HBTs
M. Rudolph, R. Doerner, P. Heymann

WE1D Frequency Control Advances or Wireless Applications

Chair: R. Newgard Co-chair: S. Wetenkamp

As the demand for more complex wireless systems grows to meet the seemingly insatiable appetite of the consumer marketplace, the pressure on the LO sources has kept pace. This session presents a variety of approaches and discussions of problem areas that the design engineer faces in his quest for the perfect signal source.

WE1D-1:
Invited: Nonlinear Effects in Oscillators and Synthesizers
U.L. Rohde

WE1D-2:
PLL Synthesizers: PLL Switching Speed and Speed-up Mechanisms
B. Goldberg

WE1D-3:
An Agile Stored SD Sequence Fractional-N Synthesizer
R. Walkington, P. Brennan

WE1D-4:
6.7 GHz Frequency Synthesizer in 0.8 mm Silicon Bipolar Production Technology
G. Ritzberger, H. Knapp, J. Boeck, M. Rest, L. Treitinger, A.L. Scholtz

WE1D-5:
GSM 900/DCS 1800 Fractional-N Frequency Synthesizer with Very Fast Settling Time
B. Neurauter, G. Maerzinger, R. Weigel, T. Lueftner, M. Scholz, V. Mutlu, J. Fenk

WE1D-6:
Phase Decrement Type Direct Frequency Synthesizer Driven by a DDS
K. Tajima, M. Tsuru, Y. Isota, O. Ishida, H. Ikematsu, K. Itoh

WE1E Dispersion Properties of Periodic Structures and Uniform Transmission Lines

Chair: P.Lampariello Co-chair: J. Zehentner

Papers of this session deal with guiding characterics and their applications. Low frequency dispersion features are explained in terms of newly discovered complex modes. Useful ranges of physical parameters for efficient radiation are given. Composite microstrip structures are introduced to increase the slow-wave factor. Periodic pertubations are utilized as waveguide walls for achieving a non-radiative dielectric waveguide in planar circuits. Explicit eigenvalue formulation of the vector telegraphist equation is applied to an anisotropic uniform waveguide. Solutions of two-dimensional static boundary value problem with perfect magnetic and electric walls are applied to shielded multiconductor transmission lines.

WE1E-1:
Effect of Losses on the Spectral Transition of Modal Poles between the Improper and the Proper Riemann Sheets
A.H. Kamel, A.S. Omar

WE1E-2:
Low Frequency Dispersion Features of a New Complex Mode for a Periodic Strip Grating on a Grounded Dielectric Slab
P. Burghignoli, P. Baccarelli, F. Frezza, A. Galli, P. Lampariello, A.A. Oliner

WE1E-3:
Guided-wave Properties of Synthesized Non-radiative Dielectric Waveguide for Substrate Integrated Circuits (SICs)
K. Wu, F. Boone

WE1E-4:
Slow-wave Propagation of Microstrip Consisting of Electric-magnetic-electric (EME) Composite Metal Strips
C. Wu, C.C. Tzuang

WE1E-5:
TEM Properties of Shielded Homogeneous Multiconductor Transmission Lines with PEC and PMC Walls
A. Borji, S. Safavi-Naeini, S.K. Chaudhuri

WE1E-6:
Explicit Eigenvalue Approach to the Efficient Determination of the Hybrid Spectrum of Ferrite-loaded Circular Waveguide
L. Pierantoni, A. Camicia, T. Rozzi

WE1F Advances in Time Domain Methods I

Chair: P. Russer Co-chair: W. Gwarek

Time domain methods for electromagnetic field simulation are of growing interest since they are extremely well suited for treating broadband as well as transient phenomena and they are also applicable to general structures. The session concentrates on novel simulation schemes as well as on the improvement of already known schemes. Methods for the reduction of computational effort as well as improvement of convergence and accuracy are investigated, and interesting applications are presented.

WE1F-1:
Envelope-finite Element (EVFE) Technique ­ 2-D Guided Wave Examples
Y. Wang, T. Itoh

WE1F-2:
Evaluation and Enhancement of Supraconvergence Effects on Nonuniform and Conformal FDTD meshes
M. Celuch-Marcysiak

WE1F-3:
Fundamental Gridding Related Dispersion Effects in Multiresolution Time Domain Schemes
C. Sarris, L. Katehi

WE1F-4:
Development and Application of an Efficient FDTD/Haar MRTD Numerical Interface
C. Sarris, L. Katehi

WE1F-5:
A Novel Adaptivity for EM Time Domain Methods: Scale Adaptive Time Steps (SATS)
A. Rennings, V. Toni, P. Waldow, I. Wolff, Y. Qian, T. Itoh


10:10­11:50 am

WE2A Novel Transmission Lines, Properties
and Applications

Chair: M. Dydyk Co-chair: Ching-Kuang Tzuang

New applications of periodic structures to waveguide and delay lines are reported. Followed by the analysis and characterization of the periodical structure, novel transmission lines are optimized for low loss. Use of periodical structure with elevated transmission lines, oxidized silicon and photon implanted substrates have demonstrated the potential for high performance.

WE2A-1:
Transmission Line Noise from Standard and Proton-implanted Si
K.T. Chan, A. Chin, C.M. Kwei, D.T. Shien, W.J. Lin

WE2A-3:
Dielectric Properties of Oxidized Porous Silicon in a Low Resistivity Substrate
R.L. Peterson, R.F. Drayton

WE2A-3:
A Novel CPW Structure for High Speed Interconnects
S. Yoon, J. Yook, Y. Kim, O. Seo, K. Lim, S. Cho, S. Lee

WE2A-4:
Small-size Delay Line Based on a Periodically Loaded Waveguide
J. Hesselbarth, R. Vahldieck

WE2A-5:
Frequency Dependence of Bloch Impedance in a Periodic Transmission Line Structure
E. Takagi

WE2A-6:
A Photonic Crystal Seam (PCS) for Metallic Waveguides
J.L. Hesler

WE2B Techniques to Advance Power Amplifier Linearity and Efficiency

Chair: A. Katz Co-chair: E. James Crescenzi, Jr.

The efficient transmission of information at high data rates requires highly linear amplifiers. A variety of approaches for increasing power amplifier linearity and related efficiency are presented in this session. These techniques are essential to satisfy 3G mobile radio and future personal communications standards. Variations of feedforward, predistortion and baseband digital linearization, and adaptive equalization are covered. A new method of optimizing LINC (Linear Amplification with Non-linear Components) is also included.

WE2B-1:
Efficient Baseband/RF Feedforward Linearizer through a Mirror Power Amplifier using Software-defined Radio and Quadrature Digital Up-conversion
E.G. Jeckeln, F.M. Ghannouchi, M.M. Sawan, F. Beauregard

WE2B-2:
Adaptive RF Cartesian Predistorter Based on the Low Frequency Even Order IM Terms
Y. Yang, Y.Y. Woo, B. Kim

WE2B-3:
A High Efficiency Feedforward Amplifier with a Series Diode Linearizer for Cellular Base Stations
K. Horiguchi, M. Nakayama, Y. Sakai, K. Totani, H. Senda, Y. Ikeda, O. Ishida

WE2B-4:
A Gain/Phase Imbalance Minimization Technique for LINC Transmitter 
X. Zhang, P. Nanawa, L.E. Larson, P.M. Asbeck

WE2B-5:
A Novel DSP Architecture of Adaptive Feedforward Linearizer for RF Amplifiers
Y. Wang, T. Itoh

WE2B-6:
The Novel Programmable RF Predistortion Linearizer
J. Sun, M.Y. Chia

WE2C Nonlinear FET Modeling

Chair: M Mallavarpu Co-chair: M Calcatera

This session covers the nonlinear modeling of PHEMTs, MESFETs, and MOSFETs.

WE2C-1:
A GaAs MESFET Transient Model Capable of Predicting Trap-induced Memory Effects Under Complex Digital Modulation
F. Wang, W.D. Jemison, J.C. Hwang

WE2C-2:
Intermodulation Distortion Simulation using Physical GaAs FET Model
W. Contrata, Y. Ando, M. Kuzuhara, Y. Hori

WE2C-3:
Full Extraction of PHEMT State Functions using Time Domain Measurements
D.G. Morgan, P. Tasker, G. Edwards, A. Phillips

WE2C-4:
Large-signal Look-up Table Model for InP HEMTs Including Non-quasi-static and Impact Ionisation Effects
D. Schreurs, K.U.Leuven; A. Orzati, L. Pergola, H. Benedickter, O. Homan, W. Baechtold

WE2C-5:
Nonlinear Noise Modeling of a PHEMT Device through Residual Phase Noise and Low Frequency Noise Measurements
O. Llopis, J. Juraver, J. Graffeuil, B. Tamen, F. Danneville, A. Cappy, M. Chaubet

WE2C-6:
Intrinsic Noise Currents in Deep Submicron MOSFETs
C. Chen, J.M. Deen, Y. Cheng, M. Matloubian

WE2D The NBS/NIST Centennial: One Hundred Years of RF Metrology and Standards

Chair: K. Remley Co-chair: C. Weil

NIST, the successor to the former National Bureau of Standards (NBS), celebrates its centennial year. Five NIST speakers will detail significant NBS/NIST contributions in measuring such fundamental quantities as frequency, time, power, resistance, voltage, and mass. Recent developments in primary NIST standards, such as the cesium fountain atomic clock, the Josephson AC voltage standard, and the "electronic kilogram" will also be highlighted.

WE2D-1:
NIST: Responding to Basic Needs, Responding to Special Needs
L.A. Greenhouse

WE2D-2:
Radio-frequency Metrology from NBS to NIST, the Legacy
D.S. Friday

WE2D-3:
Primary Atomic Frequency Standards at NIST
D.B. Sullivan

WE2D-4:
Broadband Josephson Voltage Standards
C.A. Hamilton, S.P. Benz

WE2D-5:
The Electronic Kilogram
M.H. Kelley

WE2E Leaky-wave Excitation and Guidance in Printed Transmission Lines

Chair: N.K. Das Co-chair: A.S. Omar

Certain geometries of printed transmission lines experience power leakage to the surface-wave mode(s) of the surrounding substrate structure. Understanding such effects, that can be unexpected in many cases, are of critical significance to microwave printed circuits and packaging. Papers in this session will present the leaky-wave excitation, guidance and characteristic impedance modeling of such critical effects under various practical conditions.

WE2E-1:
Behavioral Feature of Fast-wave Modes on Printed-circuit Transmission Lines of Open and Packaged Types
M. Tsuji, H. Shigesawa

WE2E-2:
Structural Conditions for Offering High Performance Printed-circuit Devices in Millimeter-wave Range
H. Shigesawa, M. Tsuji

WE2E-3:
High Frequency Leaky-mode Excitation on Microstrip Line
F. Mesa, D.R. Jackson, M. Freire

WE2E-4:
Spurious Radiation from a Practical Source on a Leaky Covered Microstrip Line
W.L. Langston, J.T. Williams, D.R. Jackson, F. Mesa

WE2E-5:
Proper Definition of Voltage for a Leaky Two-layer Stripline Consistent with its Characteristic Impedance
N. Das

WE2F Advances in Time-domain Methods II

Chair: A. Beyer Co-chair: V. Fouad-Hanna

This session will highlight some advances in time-domain numerical techniques. Among others, a new method will be introduced allowing a wideband simulation in multi-mode environment including evanescent modes. A modificated Yee's cell is proposed for modeling of longitudinally periodic structures. As an interesting approach, a discrete wavelet transform will be proposed for the computation of the near-field to near-field transform in a multi-region FDTD scheme. A global modeling approach using interpolating wavelets shows how to include semiconductor properities into field theoretical considerations. Next, a 3D unconditionally stable Alternating Direction Implicit-FDTD algorithm will be investigated.

WE2F-1:
A Generalized Approach to Wideband S-parameter Extraction from FDTD Simulations Applicable to Evanescent Modes In Inhomogeneous Guides
W.K. Gwarek, M. Celuch-Marcysiak

WE2F-2:
Modified Yee's Cell for Finite-difference Time-domain Modeling of Periodic Boundary Guiding Structure
H. Lee, J. Kim

WE2F-3:
A New Multiresolution Near-field to Near-field Transform Suitable for Multi-region FDTD Schemes
A.V. Laisne, R. Gillard

WE2F-4:
A Global Modeling Approach using Interpolating Wavelets
S. Goasguen, M. Tomeh, S. El-Ghazaly

WE2F-5:
Performance of Three-dimensional Graded ADI-FDTD Algorithm
E. Hu, W.J. Hoefer

WE2F-6:
Reconstruction of Microwave Structures using Two-dimensional Inverse TLM (Transmission Line Matrix) Method
W.A. de Souza, L.R. de Menezes


12:00-1:15 pm

PWA: Automotive Radar

This panel discusses circuit and antenna technologies that can be used for automotive radars, and tries to clarify the features that must be met by these components. The panel will address the following questions:

·         What functions should an automotive radar be equipped with, now and in the future?

·         What is the best automotive radar scheme?

·         What device and circuit technologies will be most appropriate?

·         What antenna technologies will be most appropriate?

·         What issues still need to be addressed and solved?

PWB: University-Industry Interactions

Universities offer digital and VLSI design courses routinely at both the undergraduate and graduate levels. The availability of high frequency analog, RF, microwave and millimeter-wave design courses is far less pervasive. This panel will discuss the ways in which universities and industry can work together to increase the supply of engineers who can design circuits for wireless and broadband applications. Questions that will be discussed include the following:

·         Is industry handicapped by a real and persistent shortage of RF and microwave designers?

·         What difficulties do universities face in establishing RF and microwave design courses?

·         What does the microwave industry need from universities?

·         What do universities need from the microwave industry?

·         What different forms of collaboration between industry and universities are being deployed?

·         What are the advantages and disadvantages of each form of collaboration?

·         Should government play a role in promoting interactions between industry and universities?

·         What new approaches to collaboration can meet the needs of both industry and universities?


1:20­3:00 pm

WE3A Power Amplifiers for Wireless Applications

Chair: D. Teeter Co-chair: A. Platzker

This session highlights advances in power amplifier technologies and techniques for wireless applications. A number of competing technologies are emerging for commercial power amplifiers. 1800 MHz GSM PAs using silicon CMOS technology boast an impressive 55 percent PAE with 1 W associated output power. Amplifiers using E-mode PHEMTs are also being developed for GSM applications with efficiencies up to 61 percent. Techniques to enhance efficiency in the back-off mode of the power amplifier are also explored with modified Doherty configurations. The importance of the passive elements to the overall module performance is emphasized.

WE3A-1:
A 1W CMOS Power Amplifier for GSM-1800 with 55 percent PAE
C. Fallesen, P. Asbeck

WE3A-2:
A High Efficiency 0.25 mm CMOS PA with LTCC Multi-layer High Q Integrated Passives for 2.4 GHz ISM Band
D. Heo, A. Sutono, Y.E. Chen, E. Gebara, S. Yoo, Y. Suh, J. Laskar, E.M. Tentzeris

WE3A-3:
Variable Gain Power Amplifier for Mobile WCDMA Applications
V.T. Vintola, S.J. Kalajo, E.A. Järvinen, M.J. Matilainen

WE3A-4:
A Single Supply High Performance PA MMIC for GSM Handsets using Quasi-enhancement Mode PHEMT
W. Abey, R. Hajji, W. Kennan, H. Dang, T. Moriuchi, T. Nakamura, Y. Nonaka, E. Mitani

WE3A-5:
E-PHEMT, Single Supply, High Efficient Power Amplifiers for GSM and DCS Applications
S. Zhang, J. Cao, R. Mcmorrow

WE3A-6:
An Extended Doherty Amplifier with High Efficiency Over a Wide Power Range
M. Iwamoto, A. Williams, A.G. Metzger, C. Wang, L.E. Larson, P.M. Asbeck, P. Chen

WE3A-7:
Analysis and Experimental Study of an L-band New Topology Doherty Amplifier
S. Bousnina, F.M. Ghannouchi

WE3A-8:
Current Mode Class-D Power Amplifiers for High Efficiency RF Applications
H. Kobayashi, J. Hinrichs, P. Asbeck

WE3B Wideband Communication Systems

Chair: H.C. Huang Co-chair: L. Raffaelli

This session is focused on communication systems involving low cost LMDS transmitter modules and novel packaging techniques. In addition, the session includes papers on satellite applications and point-to-point digital radio links.

WE3B-1:
A Compact LTCC Ku-band Transmitter Module with Integrated Filter for Satellite Communication Applications
C. Lee, A. Sutono, S. Han, J. Laskar

WE3B-2:
A Microwave Frequency Generation Unit for Space Applications
L. Dayaratna, L.G. Ramos, M.K. Hirokawa

WE3B-3:
Low Cost Ka-band Transmitter Modules for LMDS Equipment Mass Production
G. Torregrosa-Penalva, A. Asensio-López, F.J. Ortega-González, J. Lluch-Ladrón-de-Guevara

WE3B-4:
A Complete Integrated TX/RX Front-end Combining 3D Topologies and Global Synthesis.
T. Le Nadan, C. Person, J. Coupez

WE3B-5:
Design and Characterization of a Low Cost ISM-band Sub Carrier Multiplexed Broadband Digital Microwave Radio Link
A.P. Chio, B.H. Galang, R.C. Guevarra, A.A. Manlapat, C.G. Santos, N.G. Toledo, I.C. Wong, D.M. Sabido

WE3C Nonlinear Modeling of Silicon Devices and Power Amplifiers

Chair: S Goodnick

This session presents the nonlinear modeling of silicon bipolar transistors, and high power amplifiers.

WE3C-1:
RF LDMOS Characterization and Its Compact Modeling
J. Jang, K. Banerjee, Z. Yu, R.W. Dutton, O. Tornblad, T. Arnborg, Q. Chen

WE3C-2:
Direct Extraction and Modeling Method for Temperature Dependent Large Signal CAD Model of Si-BJT
Y. Suh, D. Heo, A. Raghavan, E. Gebara, S. Nuttnick, K. Lim, J. Laskar

WE3C-3:
An Accurate Large-signal Model for a High Efficient Si Bipolar GSM Power Transistor
R.M. Heeres, M. Versleijen, H. Visser

WE3C-4:
Analysis of Low Frequency Memory and Influence on Solid State HPA Intermodulation Characteristics
N. Le Gallou, H. Buret, E. Ngoya, J.M. Nebus

WE3C-5:
An Improved Behavioral Modeling Technique for High Power Amplifiers with Memory
N. Le Gallou, H. Buret, E. Ngoya, D. Barataud, J. Nebus

WE3D Microwave and Optical Broadband Internet Access

Chair: C. Cox

The first and still dominant commercial market for microwave photonics, is the distribution (unidirectional data flow) such as in cable television (CATV) services. However, there is a large market (potentially larger than CATV distribution) in the communication (bi-directional data flow) of high speed digital data. The market driving this application is the Internet, which has been growing at what can only be described as an explosive rate. For example, Internet traffic is doubling every 100 days; e-mail traffic alone has reached 95 million per month. Providing broadband access via the exisiting coax, optical and/or wireless plants means upgrading the present plants in two ways: 1. converting it to be addressable from a broadcast network, and 2. implementing bi-directional information flow instead of the present unidirectional flow. The technologies that are being developed to provide broadband access are coax cable, optical fiber and fixed or mobile wireless communications. This session will explore each of these approaches and their combination via invited speakers who are actively working in the field.

WE3D-1:
Invited: Broadband Access Networks: Evolution and Convergence Implications for Equipment Providers
T.J. Brophy

WE3D-2:
Invited: Wireless Aspects of Broadband Access
K. Warble, J. Locke, B. Bishop

WE3D-3:
A Combined Optical-wireless Broadband Internet Access: Transmission Challenges
T. Marozsak, E. Udvary, T. Berceli

WE3D-4:
In-band Optical Crosstalk in Fiber-radio WDM Networks
D. Castleford, A. Nirmalathas, D. Novak, R. Tucker

WE3E CAD with Neural Networks and EM Techniques

Chair: A. Sharma Co-chair: R. Biernacki

This session presents further innovative applications of neural networks to microwave CAD. This includes knowledge-aided design, sensitivity analysis and inverse space mapping. New concepts in geometrical parameterization and combining circuit level with FDTD simulations are also featured.

WE3E-1:
Neural Inverse Space Mapping EM-optimization
J.W. Bandler, M.A. Ismail, J.E. Rayas-Sanchez, Q. Zhang

WE3E-2:
An Approach for Knowledge-aided-design (KAD) of Microwave Circuits using Artificial Neural Networks
R. Zingg, K.C. Gupta

WE3E-3:
Exact Adjoint Sensitivity Analysis for Neural Based Microwave Modeling and Design
J. Xu, M.C. Yagoub, Q. Zhang

WE3E-4:
New Technique using Poles and Modes Derivatives for Frequency and Geometry Parameterization of Microwave Structures
A. Gati, V.F. Hanna, M. Wong

WE3E-5:
Extending Spice-like Analog Simulator with a Time-domain Full-wave Field Solver
T. Li, W. Sui

WE3F Applications of Time Domain Methods

Chair: R. Vahldieck Co-chair: L. Roselli

Time domain methods for the modeling of electromagnetic fields are increasingly used in practical applications of microwave circuit analysis and design. The papers in this session address a number of very practical problems and illustrate the degree of maturity time domain methods have reached to date. Topics like iris/slot coupling in combline filters, the characterization of multi-chip modules, parameter estimation of microwave distributed circuits, the combination of MOSFET models with lumped-element FDTD technique and the application of FDTD-based methods to optical problems are covered in detail.

WE3F-1:
Efficient FDTD Modeling of Irises/Slots in Microwave Structures
A. Rong, A.C. Cangellaris, H. Yang

WE3F-2:
Time Domain Characterization of Multichip Module Elements
W. Dressel, L. Vietzorreck, P. Russer

WE3F-3:
Full-wave Analysis and Model-based Parameter Estimation Approaches for Y-matrix Computation of Microwave Distributed RF Circuits
V. Chtchekatourov, F. Coccetti, P. Russer

WE3F-4:
Analysis of Signal Integrity in High Speed Digital ICs by Combining MOSFET Modeling and the LE-FDTD Method
F. Alimenti, G. Stopponi, P. Placidi, R. Sorrentino, P. Ciampolini

WE3F-5:
Interpolating Wavelet Galerkin Model of Time Dependent Inhomogeneous Electrically-large Optical Waveguide Problems
M. Fujii, W.J. Hoefer

WE3F-6:
Time Domain Optical Response of Electro-optic Modulator using FDTD
M.M. Tomeh, S. Goasguen, S.M. El-Ghazaly


2:30­5:00 pm

WEIF Interactive Forum

WEIF-1:
Waveguiding Properties of a Line of Periodically Arranged Passive Dipole Scatterers
S. Tretyakov, A. Viitanen

WEIF-2:
New Type of Millimeter-wave Antenna by using the NRD Guide with LSE Mode Transmission
F. Kuroki, M. Yamaguchi, K. Seto

WEIF-3:
Efficient Method for Solving 3D Dielectric Planar Circuit with Parabolic Equation Method
T. Anada, R. Sawada, T. Hiraoka, J. Hsu

WEIF-4:
Design of Surface-wave Band-gaps for Planar Integrated Circuits using Multiple Periodic Metallic Patch Arrays
R. Leone, H. Yang

WEIF-5:
Space Leakage of Power from the Slotline
J. Zehentner, J. Machac, P. Lorenz

WEIF-6:
Derivation of Analytical Dyadic Green's Function Modifications for Microstrip Attenuation in Transmission Layered Structures
C.M. Krowne

WEIF-7:
On the Penetration of the Longitudinal Component of EM Fields into Metals.
R.I. Tzontchev, A.E. Chubykalo, J.M. Rivera-Ju'arez, V.V. Onoochin

WEIF-8:
Modal Cutoff in Coaxial Transmission Lines of Conical and Cylindrical Geometries
C.M. Weil, B.F. Riddle, D.R. Novotny, R.T. Johnk

WEIF-9:
Full Wave Analysis of Transverse and Longitudinal Couplings in Silicon RFIC Effect of Buried Diffusions.
S. Wane, H. Baudrand, D. Bajon, P. Gamand

WEIF-10:
Frequency/Time-domain Modeling of Microstrip Circuits by a Modified Spectral Domain Approach
P. Arcioni, M. Bressan, G. Conciauro

WEIF-11:
Efficient Analysis of Waveguide-to-microstrip and Waveguide-to-coplanar Line Transitions
L. Greda, R. Pregla

WEIF-12:
A 3-D Method of Moments for the Analysis of Real Life MMICs
M. Farina, T.E. Rozzi

WEIF-13:
Generalized Polygonal Basis Functions for the Electromagnetic Simulation of Complex Geometrical Planar Structures
L. Knockaert, J. Sercu, D. De Zutter

WEIF-14:
FD-FD GSM Technique for the CAD and Optimization of Combline Filters
R. Lotz, F. Arndt

WEIF-15:
Electromagnetic Modeling of Multi-layer Microwave Circuits by the Longitudinal Decomposition Approach
A. Kirilenko, D. Kulik, L. Rud, V. Tkachenko, P. Pramanick

WEIF-16:
A Novel Cold-FET Method for Determining Extrinsic Capacitances using a Capacitive Transmission Line Model
Y. Lai, C. Chen

WEIF-17:
Modeling of 3-D Planar Conducting Structures on Lossy Silicon Substrate in High Frequency Integrated Circuits
J. Zheng, J. Li, A. Weisshaar

WEIF-18:
Modeling and Investigation of Instabilities in Heterojunction Interband Tunnel Diodes for Microwave Applications
A. Cidronali, G. Collodi, G. Manes, C. Toccafondi, M. Deshpande, N. El-Zein, H. Goronkin, V. Nair

WEIF-19:
MOSFET Bulk Effect Behaviour and Estimation for Microwave-frequency Modeling
R.V. Reynisson, T.E. Kolding, T. Larsen

WEIF-20:
A New Analytical Small-signal Model of Dual-gate GaAs MESFET
M.M. Ibrahim, B.A. Syrett, J. Bennett

WEIF-21:
Measurement-based Extrinsic Modeling of RF Components
K. Naishadham

WEIF-22:
Design and Implementation of Micromachined Lumped Quadrature Hybrids
L. Lu, S. Mohammadi, P. Bhattacharya, L.P. Katehi, G.E. Ponchak

WEIF-23:
Q-enhancement of Spiral Inductor with N+ Diffusion Patterned Ground Shields
E. Chen, D. Heo, J. Laskar, D. Bien

WEIF-24:
A Design Mapping Formula of Asymmetrical Multi-element Coupled Line Directional Couplers
J.B. Kil, C.S. Kim, K.S. Choi, J.S. Park, D. Ahn

WEIF-25:
A General Design Formula of Multi-section Power Divider Based on Singly Terminated Filter Design Theory
S. Lee, C. Kim, K. Choi, J. Park, A. Dal

WEIF-26:
A New Balanced Amplifier using a 6-Port Power Divider
J. Lim, J. Han, S. Kim, D. Lee, S. Nam, S. Eom

WEIF-27:
60 GHz Coplanar Waveguide Couplers and Slotline Transition on Polished Beryllium Oxide.
B. Lakshminarayanan, T. Weller, M. Oldenburg

WEIF-28:
Integration of Optimized Low Pass Filters in Band Pass Filters for Out-of-band Improvement.
C. Quendo, E. Rius, C. Person, M. Ney

WEIF-29:
Non-adjacent Resonators Effects on Coupling and Resonant Frequency in Combline Filters
M.A. El Sabbagh, K.A. Zaki, M. Yu

WEIF-30:
Evanescent-mode Bandpass Filters Based on Ridged Waveguide Sections and Inductive Strips
A. Kirilenko, L. Rud, V. Tkachenko, D. Kulik

WEIF-31:
A Compact Elliptic-function BPF using Triple-mode Cavities for Terrestrial Digital Television Transmitters
K. Konno, M. Kubota, Y. Iwamoto

WEIF-32:
Circular-to-rectangular Waveguide Diplexers
T. Shen, K.A. Zaki, T.G. Dolan

WEIF-33:
K-band Monolithic Double-balanced Resistive Mixer with Integrated Balanced Oscillator
K.S. Ang, I.D. Robertson, D. Kim, M. Ju, H. Seo

WEIF-34:
Fundamental Limitations of Conversion Loss and Output Power on an Even Harmonic Mixer with Junction Capacitance
K. Itoh, M. Shimozawa

WEIF-35:
A K-band Subharmonic Down-converter in a GaAs Metamorphic HEMT Process
B. Matinpour, N. Lal, J. Laskar, R.E. Leoni, C. Whelan

WEIF-36:
Performance Comparison of Single and Dual Stage MMIC Limiters
J.M. Carroll

WEIF-37:
Novel Frequency Doubler using Feedforward for Fundamental Frequency Component Suppression
N. Siripon, M. Chongcheawchamnan, I.D. Robertson

WEIF-38:
A Compact T/R Switching Circuit using Quadrature Couplers and Drain-driven HPAs
H. Uchida, M. Nii, Y. Tsukahara, M. Miyazaki, Y. Itoh

WEIF-39:
Comparison of Different Adaptation Algorithms for Adaptive Digital Predistortion based on EDGE Standard
K.C. Lee, P. Gardner

WEIF-40:
An Internally Matched LTCC 3G WCDMA LDMOS 180 W Power Amplifier
J. Rstes, P. Piel, G. Shapiro, A. Pavio, J. Call, G. Funk

WEIF-41:
Effect of Efficiency Optimization on Linearity of LINC Amplifiers with CDMA Signal
J. Yi, Y. Yang, B. Kim

WEIF-42:
Ultra-linear Distributed Class-AB LDMOS RF Power Amplifier for Basestations
M.P. van der Heijden, H.C. de Graaff, L. de Vreede, J.N. Burghartz, J.R. Gajadharsing

WEIF-43:
Experimental Investigation on Efficiency and Linearity of Microwave Doherty Amplifier
Y. Yang, J. Yee, Y.Y. Woo, B. Kim

WEIF-44:
Numerical Investigation of Vertical Contactless Transitions for Multilayer Circuits
P. Moretti, L. Manholm, B. Svensson, P.J. Starski

WEIF-45:
Direct Conversion Receiver for Digital Beamforming at 8.45 GHz
K. Mori, H. Arai, Y. Qian, T. Itoh

WEIF-46:
Reflective Antenna Arrays Based on Shorted Ring Slots
A.E. Martynyuk, J.I. Martinez

WEIF-47:
Analysis and Design of Active Antenna Arrays
K. Liu, S.M. El-Ghazaly, V. Nair, M. Deshpande, N. El-Zein, H. Goronkin

WEIF-48:
Direction Finding using Spectral Estimation with Arbitrary Antenna Arrays
T. Do-Hong, W. Fisch, P. Russer

WEIF-49:
Broadband Planar Antenna with Low Side Lobes Levels Capabilities and High Cross-polarisation Rejection for DBS Reception
L. Bekraoui

WEIF-50:
A Low Noise Active Integrated Antenna Receiver for Monopulse Radar Applications
S. Lin, Y. Qian, T. Itoh

WEIF-51:
A Quasi-optical Linearizer
K.Y. Sung, B. Elamaran, W.A. Shiroma

WEIF-52:
Study of Design Parameters in Waveguide-based Spatial Power Combining Amplifier Arrays using FDTD
M. Ozkar, G. Lazzi, A. Mortazawi

WEIF-53:
Broadband Analysis of a D-band Holographic Power Combining Circuit
M. Hoeft, R. Judaschke, J. Weinzierl


3:30­5:10 pm

WE4A Next Generation Power Amplifier Techniques

Chair: J. Heaton Co-chair: P. Asbeck

This session presents advanced materials and design approaches for high frequency and wideband power amplifier realizations. GaAs, GaN FET, and GaAs HBT-based technolgies are used.

WE4A-1:
A 6 GHz 50 W Low Distortion Push-pull GaAs Power FET Optimized for 12 V Class AB Operation
T. Yamamoto, S. Sano, K. Naito, T. Igarashi, J. Fukaya

WE4A-2:
High Power Broadband AlGaN/GaN HEMT MMICs on SiC Substrates
B.M. Green, V. Tilak, H. Kim, J. Smart, J.R. Shealy, L.F. Eastman, S. Lee, K. Webb

WE4A-3:
New Design Method of Non-uniform Distributed Power Amplifiers. Application to a Single Stage (1 W/4.5-18 GHz) PHEMT MMIC.
C. Duperrier, M. Campovecchio, R. Quere, L. Roussel, M. Lajugie

WE4A-4:

20-30 GHz Broadband MMIC Power Amplifiers with Compact Flat Gain PHEMT Cells
S. Yoshinobu, K. Hitoshi, H. Takayuki, S. Susumu, M. Yasuo

WE4A-5:
X-band MMIC Power Amplifier with an On-chip Temperature Compensation Circuit
Y. Kazuhisa, I. Yoshitada, Y. Mamiko, I. Yukio, T. Tadashi

WE4A-6:
A Novel Base Feed Design for High Power, High Frequency Heterojunction Bipolar Trasistors.
M.L. Salib, H. Hahn, J. Zingaro, A. Ezis, A.K. Gupta

WE4A-7:
High Efficiency S-band Class AB Push-pull Power Amplifier with Wideband Harmonic Suppression
C.Y. Hang, Y. Qian, T. Itoh

WE4B New Technologies for Wireless Communications Systems

Chair: H. Ogawa Co-chair: J.K. McKinney

Wireless communications systems are employing new technologies which require higher performance and lower implementation costs. This session looks at three technologies for realizing direct conversion digital receivers for handsets and high speed digital networks. The performance of a compact 38 GHz, 156 Mbps modulator will be described. The session will close with a paper on electromagnetic characterization of indoor wireless LANs.

WE4B-1:
A Flexible Multiband Frontend for Software Radios using High IF and Active Interference Cancellation
W. Schacherbauer, A. Springer, R. Weigel, T. Ostertag, C.C. Ruppel

WE4B-2:
A Highly-integrated Low Power Direct Conversion Receiver MMIC for Broadband Wireless Applications
B. Matinpour, J. Laskar

WE4B-3:
High Speed Low Cost Direct Conversion Digital Receiver
J. Gagné, J.J. Gauthier, K. Ke Wu, R.G. Renato, G. Bosisio

WE4B-4:
A 156 Mbps Compact FSK Modulator Module for 38 GHz Wireless LANs
Z. Wen, M. Akiyama, Y. Hase

WE4B-5:
An Electromagnetic Characterization of Indoor Radio Environment in Microwave WLAN Systems
P.I. Bernardi, R. Cicchetti, O. Testa

WE4C Wireless Sensors for Automotive, RFID and Communications Systems

Chair: H. Kondoh Co-chair: R. Camisa

This session will present new sensors for automotive, RFID and communications systems. The automotive radar papers attempt to decribe new methods of achieving low cost systems at 77 GHz that meet stringent design requirements. These papers overview three different approaches for the realization of these complex systems. Papers in this session will also discuss the development of two new types of retro-directive antenna arrays which have important application to wireless communications systems.

WE4C-1:
A Low Profile 77 GHz Three Beam Antenna for Automotive Radar
F. Kolak, C. Eswarappa

WE4C-2:
Proposal of Millimeter-wave Holographic Radar with Antenna Switching
Y. Asano, S. Ohshima, T. Harada, M. Ogawa, K. Nishikawa

WE4C-3:
Fully Integrated Automotive Radar Sensor with Versatile Resolution
C. Metz, J. Grubert, J. Heyen, A.F. Jacob, L.C. Stange, S. Janot, G. Oberschmidt, E. Lissel

WE4C-4:
A Reconfigurable Active Retrodirective/Direct Conversion Receiver Array for Wireless Sensor Systems
R.Y. Miyamoto, Y. Qian, T. Itoh

WE4C-5:
A Novel Card-type Transponder Designed using Retrodirective Antenna Array
S.J. Chung, T.C. Chou, Y.N. Chiu

WE4D Internet Via Satellites

Chair: R.K. Gupta Co-chair: B. Geller

A number of satellite sytems have been proposed for broadband global/regional multimedia and Internet sevices via satellites. Many of these systems are at an advanced stage of development with projected deployment in 2003 to 2005 time frame. The topics to be addressed in this special session include satellite systems for multimedia, Ka-Band satellite architectures, Ku/Ka-Band interactive terminals for geostationary and non-geostationary satellites and performance issues for a linearized TWTA satellite channel.

WE4D-1:
Satellite Systems for Multimedia and Internet Traffic
P. Chitre, R. Gupta

WE4D-2:
Ka-band Satellite System Architecture for Local Loop Internet Access
A.E. Atia

WE4D-3:
User Terminal Antennas for Broadband NGSO Satellite Communications Systems
R. Kreutel

WE4D-4:
Outdoor Units for Ka/Ku band Satellite Interactive Terminals
J.L. Fikart, A. Chan

WE4D-5:
Performance of Multi-carrier 16 QAM over a Linearized TWTA Satellite Channel
R. Schornstaedt, N. Rozario, C. Hayes, J. Sietner, A. Katz

WE4E CAD Procedures and Optimization

Chair: K.C. Gupta Co-chair: M. Mongiardo

This session presents a variety of CAD techniques including space mapping, model order reduction, and decomposition synthesis approach. Procedures for CAD of combline filters and waveguide iris design are described.

WE4E-1:
Expanded Space Mapping Design Framework Exploiting Preassigned Parameters
J.W. Bandler, M. Ismail, J.E. Rayas-Sanchez

WE4E-2:
Multi-level Passive Order Reduction of Interconnect Networks
R. Khazaka, M. Nakhla

WE4E-3:
Fast Analysis and Optimization of Combline Filters using FEM
D.G. Swanson, Jr., Bartley, R.J. Wenzel

WE4E-4:
Integrated CAD Procedure for Iris Design in a Multi-mode Waveguide Environment
W. Steyn, R. Lehmensiek, P. Meyer

WE4E-5:
Decomposition Synthesis Approach to Design of RF and Microwave Active Circuits
L.I. Babak

WE4F Ferrite and Ferroelectric Devices

Chair: D. Webb Co-chair: B. Elsharawy

This session includes discussion, experiments and theory on novel devices and emerging technology in the field of microwave magnetics and ferroelectrics. Frequency selective limiters with very low thresholds based on magnetostatic waves are described. Also discussed are isolators based on non-reciprocal leaky waves and high performance millimeter-wave Faraday rotation isolators. New applications of ferrite materials in EMI and wireless technology are also reported in this session. Thin film ferroelectric materials have been developed for tunable device applications. Their application to microwave phase shifters are described. The session also presents new data on monolithic MOS varactors on silicon for high frequency application, and CPW based voltage-controlled delay lines using integrated BST varactors.

WE4F-1:
UHF Frequency Selective Limiters
J.D. Adam, S.N. Stitzer, R.M. Young

WE4F-2:
Very Low Loss Wideband Isolators for mm-wavelengths
N.R. Erickson

WE4F-3:
A Novel Nonreciprocal Ferrite Image Guide
A.S. Akyol, L.E. Davis

WE4F-4:
A Ultra Miniature Isolator with Broadband Isolation using Ferrite Gyrator
T. Okada, T. Makino, S. Shinmura, S. Hino, T. Nakada, H. Asai

WE4F-5:
A Method of Effective Use of Ferrite for Microwave Absorber
Y. Kotsuka, M. Amano

WE4F-6:
Phase Shifters using (Ba,Sr) TiO3 Thin Films on Sapphire and Glass Substrates
B. Acikel, Y. Liu, A.S. Nagra, T.R. Taylor, P.J. Hansen, J.S. Speck, R.A. York

WE4F-7:
MOS Varactors with Ferroelectric Films
S. Gevorgian, S. Abadei, H. Berg, H. Jacobsson

 

Thursday, May 24, 2001


8:00­9:40 am

TH1A Microwave Signal Sources

Chair: Johann-F. Luy Co-chair: O. Llopis

This session is dedicated to recent advances in microwave sources with special focus on low phase noise, broadband tunability, and high power generation with solid-state oscillators. GaAs-HBT, PHEMT, silicon, and GaN technologies are used in the different approaches. Error correcting techniques for noise reduction and piezoelectric tuning of oscillators conclude the session.

TH1A-1:
Low Phase Noise, Fully Integrated Monolithic VCO In X Band Based on HBT Technology
Z. Oaurch, M. Camiade, F. Arlot, M. Prigent, M. Borgarino, L. Bary

TH1A-2:
Conditions for Broadband MMIC Voltage-controlled Oscillators Based on Theory and Experiments
A. Megej, H.L. Hartnagel, K. Beilenhoff

TH1A-3:
Solid-state High Power RF Oscillator
D. Gitsevich, D. Kirkpatrick, L. Dymond, Jr.

TH1A-4:
High Power AlGaN/GaN FET-Based VCO Sources
J.B. Shealy, J.A. Smart, J.R. Shealy

TH1A-5:
Reduced Flicker Noise in Microwave Oscillators using Feedforward Amplifiers
J.K.A. Everard, C.D. Broomfield

TH1A-6:
A Wideband Voltage-tunable Dielectric Resonator Oscillator Controlled by a Piezoelectric Transducer
T. Yun, K. Chang, R.S. Tahim

TH1B Active and Tunable Filters

Chair: M. Guglielmi Co-chair: P. Guillon

The latest developments in tunable and filters are described, from tunable materials to active element building blocks

TH1B-1:
Compact High Order Planar Ring-resonator Filters Optimized in Noise in Coplanar Technology
L. Nénert, L. Billonnet, B. Jarry, P. Guillon, C. Quendo, E. Rius, G. Tanné

TH1B-2:
Tunable Active Filters Having Multilayer Structure using LTCC
K. Kageyama, K. Saito, H. Utaki, H. Murase, T. Yamamoto

TH1B-3:
Full Wave Analysis and Design of RF Tunable Filters
J. Xu, X. Liang, K. Shamsaifar

TH1B-4:
Tunable RF Filters using Thin Film Barium Strontium Titanate Based Capacitors
A. Tombak, A. Mortazawi, F.T. Ayguavives, J. Maria, A.I. Kingon, G.T. Stauf

TH1B-5:
Hybrid Resonator Microstrip Line Electrically Tunable Filter
X. Liang, Y. Zhu

TH1B-6:
Design of Tunable Ferroelectric Filters with a Constant Fractional Band Width
I. Vendik, O. Vendik, V. Pleskachev, A. Svishchev, R. Woerdenweber

TH1C Passive Filters and Multiplexers 1

Chair: R.V. Snyder Co-chair: Chi Wang

Synthesis techniques are used to formally validate designs which have previously been known and/or approximated. New structures are presented, as well as new methods for design. Some impressive results are presented.

TH1C-1:
Design of CT and CQ Filters using Approximation and Optimization
R. Levy, P. Petre

TH1C-2:
A Method for the Direct Synthesis of General Sections
T.B. Reeves, C.W. Rossiter, N.D. van Stigt

TH1C-3:
Temperature Characteristics of Combline Resonators and Filters
H. Yao, A.E. Atia

TH1C-4:
Periodic Structures for Original Design of Voluminous and Planar Microwave Filters
B. Lenoir, D. Baillargeat, S. Verdeyme, P. Guillon, J. Puech, C. Zanchi

TH1C-5:
A Design of Planar Elliptic Bandpass Filter using SMD Type Partially Metallized Rectangular Dielectric Resonators
H.Y. Hwang, S.W. Yun, I.S. Chang

TH1C-6:
Full-wave Design of Canonical Waveguide Filters by Optimization
T. Shen, K.A. Zaki, A.E. Atia

TH1C-7:
Length Reduction of Evanescent-mode Ridge Waveguide Filters
T. Shen, K.A. Zaki

TH1C-8:
Zolotarev Bandpass Filters
H.C. Bell

TH1D HF/VHF/UHF Power Amplifiers

Chair: F.H. Raab Co-chair: M. Eron

This session addresses power amplifier techniques for HF/VHF/UHF bands. Included are RF-power MOSFETs, Class-EF and EF PAs, high-level modulators, electronic tuning, and digital linearization.

TH1D-1:
Current Status and Emerging Trends in RF Power FET Technologies
K. Shenai

TH1D-2:
7 MHz, 1.1 kW Demonstration of the New E/F2, Odd Switching Amplifier Class
S.D. Kee, I. Aoki, D. Rutledge

TH1D-3:
High Efficiency Inductor-coupled SEPIC for Use in Dynamic Envelope Tracking CDMA RF Power Amplifiers
D.R. Anderson, W.H. Cantrell

TH1D-4:
Electronically Tunable Class-E Power Amplifier
F.H. Raab

TH1D-5:
A GSM-EDGE High Power Amplifier Utilising Digital Linearisation
P.B. Kenington, M. Cope, R.M. Bennett, J. Bishop

TH1E Probing and Automated Measurements Joint IMS/ARFTG Session

Chair: E. Strid Co-chair: B. Szendrenyi

Component cost presssures have driven new measurement technologies for more accurate characterization and less costly production testing. Papers in this session describe new techniques for characterizing active antenna arrays, electro-optic receivers, on-wafer three-port devices and transmission lines, and automated filter tuning algorithms.

TH1E-1:
Integrated Electro-thermal Probe
R.M. Reano, K. Yang, J.F. Whitaker, L.P. Katehi

TH1E-2:
Calibrating Electro-optic Sampling Systems
D.F. Williams, P.D. Hale, T.S. Clement, J.M. Morgan

TH1E-3:
A Three-port Vector Network Analyzer-measurement System, Calibration and Results
T. Chu, W. Deng

TH1E-4:
Microwave On-wafer Characterization of Three-port Devices using Shield-based Test-fixtures
T.E. Kolding, M.B. Jenner, S. Laursen

TH1E-5:
Accurate Transmission Line Characterization on High and Low Resistivity Substrates
G.J. Carchon, B. Nauwelaers, K.U. Leuven

TH1E-6:
Automatic Test and Tuning System for Microwave Filters
P.A. Harscher, R. Vahldieck, S. Amari

TH1F Al Gross Memorial Special Session

Chair: V. Nair

Al Gross is considered the "founding father" of wireless communications. In 1938, while only in his teens, he invented a hand-held mobile radio operating above 200 MHz, an unexplored part of the radio frequency spectrum at that time. Other ham radio operators, commenting on Al Gross' habit of walking and talking at the same time, inspired the name of his invention: "Walkie Talkie."

The US Department of Defense recruited Al Gross to the Office of Strategic Services (OSS) in late 1940. He helped develop a ground-to-air battery operated radio that could transmit up to 30 miles. With the outbreak of World War II Al helped design the highly secretive, "Joan-Eleanor," the ultra-high frequency miniature two-way radio system. This "Joan-Eleanor" was considered one of the most spectacular radio developments during the wartime. After the war Al Gross started his own company to develop the hand held radio technology. He created a citizen's band radio. He also invented a prototype pager in 1949. One of his inventions, the two-way wrist watch radio, was immortalized in Chester Gould's famous cartoon strip, Dick Tracy

In this session speakers will discuss several of Al Gross' inventions and the impact of these inventions in today's wireless communication system.


10:10­11:50 am

TH2A Millimeter-wave Signal Sources

Chair: J.H. Kuno Co-chair: R. Alm

This session covers developments in mm-Wave signal sources utilizing a variety of technologies, including Si, GaAs/InGaP HBT and SiGe devices. The papers describe the design of practical-applications-oriented approaches which are consistent with the requirements of today's cost sensitive and manufacturing oriented communication system products.

TH2A-1:
Low Phase-noise GaInP/GaAs-HBT MMIC Oscillators up to 36 GHz
H. Kuhnert, F. Lenk, J. Hilsenbeck, J. Würfl, W. Heinrich

TH2A-2:
Monolithic 38 GHz Coplanar Feedback VCOs Fabricated by a Production PHEMT Technology
H.J. Siweris, H. Tischer, E. Rohrer

TH2A-3:
Low Phase-noise PHEMT-based MMIC VCOs for LMDS Applications
A. Boudiaf, M. Ahdjoudj, P. Pouvil

TH2A-4:
Coplanar and Microstrip Oscillators in SiGe SIMMWIC Technology
K.M. Strohm, C.N. Rheinfelder, J. Luy, P. Nuechter, T. Hess, W. Heinrich, H. Kuhnert, M. Nadarassin, C. Warns, W. Menzel

TH2A-5:
Low Jitter Silicon Bipolar Based VCOs for Applications in High Speed Communication Systems.
A. Khanna, E. Topacio, E. Gane, D. Elad

TH2A-6:
Push-push Oscillators for 94 and 140 GHz Applications using Standard Pseudomorphic GaAs HEMTs
S. Kudszus, W.H. Haydl, A. Tessmann, W. Bronner, M. Schlechtweg

TH2B Active and Planar Filters

Chair: D.G. Swanson, Jr

This session addresses noise issues for active filters and presents two basic building blocks for active filters. We will also present a planar topology suitable for wireless applications and an alternative topology for broadband edge-coupled filters. The final paper presents a mm-wave filter suitable for flip-chip applications.

TH2B-1:
Negative Resistance Optimized in Noise for Losses Compensation in Microstrip Resonators
A. Zaitsev, B. Kapilevitch, L. Billonnet, B. Jarry, P. Guillon

TH2B-2:
Using a Negative Capacitance to Increase the Tuning Range of a Varactor Diode in MMIC Technology
B. Delacressonniere, J.L. Gautier, S. Kolev

TH2B-3:
Compact MMIC Active Inductor
G. Avitabile, B. Chellini, E. Limiti, F. Giannini

TH2B-4:
Microstrip Miniaturized Loop-filters with High Out-of-band Rejection for Future Mobile Terminals
Y. Toutain, J. Coupez, C. Person

TH2B-5:
Wideband Bandpass Filter Design with Three-line Microstrip Structures
J. Kuo, E. Shih

TH2B-6:
A 60 GHz-band Planar Dielectric Waveguide Filter for Flip-chip Modules
M. Ito, K. Maruhashi, K. Ohata, K. Ikuina, T. Hashiguchi, S. Iwanaga

TH2C Passive Filters and Multiplexers 2

Chair: J. Modelski Co-chair: H. Clark Bell

Practical design and analysis methods are presented for applications covering TEM and waveguide filters, equalizers, diplexers and multiplexers, including high power handling.

TH2C-1:
Design of Coupled Resonators Group Delay Equalizers
H. Hsu, K. Zaki, H. Yao, A. Atia

TH2C-2:
High Power C-band Dielectric Resonator Filters for Output Multiplexers
Y. Latouche, D. Gasperoni, J.J. Herren

TH2C-3:
Analysis of Power Handling Capacity of Band Pass Filters
C. Wang, K.A. Zaki

TH2C-4:
Low Loss Filters in Rectangular Waveguide with Rigorous Control of Spurious Responses Through a Smart Modal Filter
F. Alessandri, M.C. Comparini, F.M. Vitulli

TH2C-5:
Observations on the Stopband Performance of Tapped Line Filters
R.J. Wenzel, D.G. Swanson, Jr.

TH2C-6:
Stop-band Improvement of Rectangular Waveguide Filters using Different Width Resonators: Selection of Resonator Widths
M. Morelli, I. Hunter, R. Parry, V. Postoyalko

TH2C-7:
Diplexer Design using Pre-synthesized Waveguide Filters with Strongly Dispersive Inverters
S. Amari, J. Bornemann, W. Menzel, F. Alessandri

TH2C-8:
Filter Topologies with Minimum Peak Stored Energy
C. Ernst, V. Postoyalko, R. Parry, I. Hunter

TH2D Millimeter-wave Multipliers and Mixers

Chair: D. Choudhury Co-chair: P. Saunier

This session presents state-of-the-art data on W-band to 2.7 THz multipliers and mixers. The opening paper presents the fabrication and performance of a 2.7 THz monolithic membrane diode tripler. This is followed by a paper on fabrication of 0.2 to 2.7 THz devices using several different techniques. In the third paper, the authors demonstrate a 200-300 GHz SIS mixer amplifier with 8 GHz IF bandwidth. Several submillimeter-wave multipliers using substrateless Schottky diode circuits configurations are presented in the fourth paper. The next paper presents a 76.5 GHz low cost flip-chip
I-Q mixer for automotive applications. The sixth paper presents a first-time demonstration of a 1.2 THz LO chain using planar devices, performance of which supersedes current state-of-the-art whisker contacted devices. In the last paper, 5 mW output power is demonstrated at 290 GHz with an heterostruture barrier tripler.

TH2D-1:
2.7 THz Waveguide Tripler using Monolithic Membrane Diodes
F. Maiwald, S. Martin, J. Bruston, A. Maestrini, T. Crawford, P.H. Siegel

TH2D-2:
Fabrication of 200 to 2700 GHz Multiplier Devices using GaAs and Metal Membranes
S.C. Martin, B.J. Nakamura, A. Fung, J. Bruston, A.E. Maestrini, F. Maiwald, P.H. Siegel, E. Schlecht, I. Mehdi, R.P. Smith

TH2D-3:
A 200-300 GHz SIS Mixer-preamplifier with 8 GHz IF Bandwidth
E.E. Lauria, A.R. Kerr, M.W. Pospieszalski, S. Pan, J.E. Effland, A.W. Lichtenberger

TH2D-4:
200, 400 and 800 GHz Schottky Diode "Substrateless" Multipliers: Design and Results
E.T. Schlecht, G. Chattopadhyay, A. Maestrini, A. Fung, S. Martin, D. Pukala, I. Mehdi, J. Bruston

TH2D-5:
An I-Q Mixer at 76.5 GHz using Flip-chip Mounted Silicon Schottky Diodes
M.M. Kaleja, A.J. Herb, E.M. Biebl, R.H. Rasshofer

TH2D-6:
Performance of a 1.2 THz Frequency Tripler using a GaAs Frameless Membrane Monolithic Circuit
A. Maestrini, D. Pukala, S. Martin, I. Mehdi, J. Bruston

TH2D-7:
A 5 mW-290 GHz Heterostructure Barrier Tripler in a Waveguide Configuration
T. David, D. Lippens, S. Arscott, T. Akalin, J. Carbonell, P. Mounaix, M. Guillon, A. Maestrini, B. Lecomte, G. Beaudin, M. Chaubet

TH2E Measurements of Non-linear Devices and Systems -- Joint IMS/ARFTG Session

Chair: J. Barr Co-chair: L. Dunleavy

The explosion of wireless communication systems with digital modulation has increased the importance of characterizing non-linear system components, especially power amplifiers. This session will address the general area of non-linear measurements with several specific treatments of distortion metrics for power amplifiers.

TH2E-1:
A Method to Compare Vector Nonlinear Network Analyzers
K.A. Remley, D.C. DeGroot, J.A. Jargon, K.C. Gupta

TH2E-2:
Analysis and Measurement of Multi-tone Intermodulation Distortion of Microwave Frequency Converters
J.C. Pedro, N.B. de Carvalho

TH2E-3:
NPR & Co-channel Distortion Ratio: A Happy Marriage?
A.J. Geens, Y. Rolain, W.R. Van Moer

TH2E-4:
Linearity Optimization of a Distributed Basestation Amplifier using an Automated High Speed Measurement Protocol
M.P. van der Heijden, B. Rejaei, L.C. de Vreede, J.R. Gajadharsing

TH2E-5:
Ultra-linear Power Amplifier Characterization using Dynamic Range Extension Techniques
R. Hassun, N. Kuhn, R. Posner, R. Sweeney, B. Vassilakis

TH2E-6:
Direct Measurement of the Maximum Operating Region in GaAs HBTs for RF Power Amplifiers
A. Inoue, S. Suzuki, K. Yamamoto, T. Shimura, R. Hattori, Y. Mitsui, S. Nakatsuka

TH2F High Speed HBT Technology and Applications

Chair: L. Kushner Co-chair: H.A. Hung

Advances in Heterojunction Bipolar Transistors (HBT) technology have resulted in high performance bipolar integrated circuits operating at ever increasing frequency. This session contains five SiGe HBT papers with ft s up to 122 GHz, followed by a 295 GHz ft InGaAs HBT-based amplifier. HBT 20 GHz mixers, 40 Gbps optical networking ICs, and a 185 GHz HBT amplifier are described. SiGe HBTs are characterized for microwave oscillator applications, and a power HBT with simultaneous high ft , and high breakdown voltage is presented.

TH2F-1:
Benefits of SiGe over Silicon Bipolar Technology for Broadband Mixers with Bandwidth above 10 GHz
S. Hackl, M. Wurzer, J. Boeck, T.F. Meister, H. Knapp, K. Aufinger, S. Boguth, L. Treitinger, A.L. Scholtz

TH2F-2:
40 Gb/s 4:1 Multiplexer and 1:4 Demultiplexer IC Module using SiGe HBTs
T. Masuda, N. Shiramizu, E. Ohue, K. Oda, R. Hayamai, M. Kondo, K. Washio, K. Ohhata, H. Shimamoto, T. Harada

TH2F-3:
40-Gb/s Analog IC Chipset for Optical Receiver ­ AGC Amplifier, Full-wave Rectifier and Decision Circuit ­ Implemented using Self-aligned SiGe HBTs
K. Ohhata, F. Arakawa, T. Masuda, N. Shiramizu, K. Washio

TH2F-4:
Low Frequency Noise and Phase Noise Behavior of Advanced SiGe HBTs
L. Bary, G. Cibiel, J. Ibarra, O. Llopis, R. Plana, J. Graffeuil, G. Niu, J. Cressler, Z. Jin, S. Zhang, A. Joseph

TH2F-5:
Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-aligned Double Mesa Technology
L. Lu, S. Mohammadi, Z. Ma, P.K. Bhattacharya, L.P. Katehi, G.E. Ponchak, S.A. Alterovitz, K.M. Strohm, J. Luy

TH2F-6:
185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-substrate HBT Technology
M. Urteaga, D.W. Scott, T. Mathew, P. Krishnan, Y. Wei, M.J. Rodwell


12:00-1:15 pm

PTHA: Commercial Exploitation of 92­96 GHz Spectrum

The FCC is planning an initiative to remove existing regulatory barriers to commercial use at 92 to 95 GHz, an area where MIMIC-developed device technology exists. Panelists will discuss what commercial applications are possible, and what the regulatory framework should be. This will be a rare opportunity to participate in the creation of a new commercial band for microwave technology.


1:20­3:00 pm

TH3A Multi-layer Packaging Techniques

Chair: K. Varian Co-chair: J. Pavio

This session includes papers on through-the-substrate interconnection techniques and multi-layer system on a package (SOP) technologies. A via fence structure for crosstalk reduction will be presented, and coupling between microstrip lines embedded in polyimide layers will be addressed. Frequency-variant characteristics of silicon substrates will be analyzed. The final three papers address the development of integrated passives and the design of a highly integrated transceiver module in multi-layer packaging technologies.

TH3A-1:
A New Via Fence Structure for Crosstalk Reduction in High Density Stripline Packages
J.W. Gipprich, D.A. Stevens

TH3A-2:
Coupling between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si
G.E. Ponchak, E. Tentzeris, J. Papapolymerou

TH3A-3:
Silicon Substrate Coupling Noise Modeling, Analysis and Experimental Verification for Mixed Signal Integrated Circuit Design
W. Jin, Y. Eo, J. Shim, W.R. Eisenstadt, M. Park, H. Yu

TH3A-4:
RF-microwave Multi-layer Integrated Passives using Fully Organic System on Package(SOP) Technology
M.F. Davis, A. Sutono, K. Lim, J. Laskar, V. Sundaram, J. Hobbs, G. White, R. Tummala

TH3A-5:
Design of Embedded High Q Inductors in MCM-L Technology
S. Dalmia, W. Kim, S.H. Min, M. Swaminathan, V. Sundaram, F. Liu, G. White, R. Tummala

TH3A-6:
A Highly Integrated Transceiver Module for 5.8 GHz OFDM Communication System using Multi-layer Packaging Technology
K. Lim, A. Obatoyinbo, A. Sutuno, S. Chakraborty, C. Lee, E. Gebara, A. Raghavan, J. Laskar

TH3B Linear Modeling of Devices and Components

Chair: M. Megahed Co-chair: R.W. Jackson

CAD algorithms depend on fast yet accurate device characterization. Interesting results have been achieved using EM modeling and parameter extraction as well as asymptotic and complex image techniques. New methods for accurate HBT model parameter extraction complete this session.

TH3B-1:
EM-based Multidimensional Parameterized Modeling of General Passive Planar Components
T. Dhaene, J. De Geest, D. De Zutter

TH3B-2:
Using Efficient Multivariate Adaptive Sampling by Minimizing the Number of CEM Analyses Needed to Establish Accurate Interpolation Models of Microwave Circuits
R. Lehmensiek, P. Meyer

TH3B-3:
Accurate Closed-form Expressions for the Frequency-dependent Line Parameters of On-chip Interconnects on Lossy Silicon Substrate
A. Weisshaar, H. Lan

TH3B-4:
Microstrip Line on Ground Plane with Closely Spaced Perforations ­ Simple CAD Formulas by Synthetic Asymptote
Y.L. Chow, K. Wan, T.K. Sarkar, B. Kolundzija

TH3B-5:
An Extrinsic-inductance Independent Approach for Direct Extraction of HBT Intrinsic Circuit Parameters
T. Horng, J. Wu, H. Huang

TH3B-6:
Consistent Small-signal and RF-noise Parameter Modeling of Carbon Doped InP/InGaAs HBT
M. Agethen, S. Schueller, P. Velling, W. Brockerhoff, F.J. Tegude

TH3C Passive Filters and Multiplexers 3

Chair: D. Schmitt Co-chair: J.J. Herren

Low cost filters with high RF performance and mass production capability are focused in this session. Dual/Triple mode filters reduce the size and can easily realize quasi-elliptic response. The session provides novel designs and applications and covers the important frequency ranges from mobile bands to Ka-band.

TH3C-1:
Dual-mode and Quad-mode Moebius Bandpass Filters
J.M. Pond, S. Liu, N. Newman

TH3C-2:
Analysis and Design of Mass-producible Cross-coupled, Folded E E-plane Filters
E. Ofli, R. Vahldieck, S. Amari

TH3C-3:
Modified Conductor Loaded Cavity Resonator with Improved Spurious Performance
H. Salehi, R.R. Mansour, V. Dokas

TH3C-4:
A Practical Triple-mode Monoblock Bandpass Filter for Basestation Applications
C. Wang, W. Wilber, B. Engst

TH3C-5:
Low Cost Dual-mode Asymmetric Filters in Rectangular Waveguide
M. Guglielmi, O. Roquebrun, P. Jarry, E. Kerherve, M. Capurso, M. Piloni,

TH3C-6:
Analysis and Design of Grooved Circular Waveguide Dual-mode Filters
N. Yoneda, M. Miyazaki

TH3C-7:
Small Filters Based on Slotted Cylindrical Ring Resonators
R. Mostafavi, D. Mirshekar-Syahkal, Y. Lim

TH3C-8:
Dual-mode Filters for Cellular Base Stations using Metallized Dielectric Resonators
M. Fumagalli, G. Resnati, G. Macchiarella

TH3D Millimeter-wave Transceiver Elements and Assemblies

Chair: E.C. Niehenke Co-chair: F. Sullivan

This session presents state-of-the-art developments in millimeter-wave transceiver elements and assemblies. Highlights of this session are: InP MMIC amplifiers covering 65 to 140 GHz and demonstrating 17 dBm of output power, a new six-port receiver operating over 23 to 31 GHz with a low BER of 10E-6, a multi-channel 60 GHz TV distributes 100 channels using NRD guide, a low phase noise W-band signal source tunes 72 to 85 GHz with greater than 40 mW of output power, and a 50 GHz 155 Mbit/sec data rate transmitter system with 1X4 patch array antennas and a variable optical delay line achieving 10E-8 BER.

TH3D-1:
65 to 145 GHz InP MMIC HEMT Medium Power Amplifiers
L.A. Samoska, Y.C. Leong

TH3D-2:
A New Direct Millimeter-wave Six Port Receiver
S.O. Tatu, E. Moldovan, R.G. Bosisio

TH3D-3:
Wireless Multi-channel TV-signal Distribution System by using NRD Guide Transmitter and Receiver at 60 GHz
F. Kuroki, S. Shinke, M. Yamaguchi, E. Suematsu, H. Sato, T. Yoneyama

TH3D-4:
Wideband Low Phase Noise High Power W-band Signal Sources
E.W. Bryerton, D.L. Thacker, K.S. Saini, R.F. Bradley

TH3D-5:
155 Mbit/s Data Transmission at 60 GHz using a 1*4 Patch Array Antenna with Variable Optical Delay Lines
G.H. Grosskopf, R. Eggemann, D. Rohde, M.S. Choi

TH3E Spatial Combining and Active Antennas

Chair: J. Harvey Co-chair: Z. Popovic

TH3E-1:
Fault Tolerance Analysis and Measurement of a Spatial Power Amplifier
S.C. Ortiz, M. Ozkar, M. Steer, A. Mortazawi, A. Yakovlev

TH3E-2:
A K-band Full-duplex Transmit-receive Lens Array
M.A. Forman, J. Vian, Z. Popovic

TH3E-3:
Quasi-optical Power Amplifier using TEM Waveguide Concept
M. Belaid, K. Wu

TH3E-4:
A 16-element Reflection Grid Amplifier with Improved Heat Sinking
A. Guyette, R. Swisher, F. Lecuyer, A. Al-Zayed, A. Kom, S. Lei, M. DeLisio, K. Sato, A. Oki, A. Gutierrez-Aitken, R. Kagiwada

TH3E-5:
A 1 W, 38 GHz Monolithic Grid Oscillator
B.C. Deckman, D. Rutledge, J. Rosenberg, E. Sovero, D. Deakin

TH3E-6:
A 94 GHz Overmoded-waveguide Oscillator with Gunn Diodes
J. Bae, M. Fujita, K. Mizuno

TH3E-7:
A Retrodirective Diode Grid Array using Four-wave Mixing
W. Ding, S.C. Lei, M.P. DeLisio

TH3E-8:
An Experimental and Theoretical Characterization of a Broadband Arbitrarily-polarized Rectenna Array
J. A. Hagerty, Z. Popovic

TH3E-9:
5.8 GHz Circular Polarized Rectifying Antenna for Microwave Power Transmission
B.H. Strassner, K. Chang

TH3F High Performance MMIC Technologies

Chair: Z. Bardai Co-chair: T. Lee

Recent advances in Si and GaAs semiconductor technologies offer innovative solutions to meet the demands of communications systems. 0.18 µm Si CMOS technology, 3-D MMIC components, deep trench guard and buried ground plane technologies all combine to offer potential for the development of a system on a chip using low cost Si technology. InP processes continue their evolution with the development of HBT on GaAs. The first two papers offer a snapshot of 0.18 µm RF-CMOS technologies that can provide integrated multi-function capabilities for analog, RF and digital building blocks. The challenges to overcome crosstalk/
isolation limitations of bulk CMOS process are addressed in the third and fourth papers using novel buried ground plane and deep trench guard structures. The fifth paper reports on low loss passive components using trench-type transmission lines implemented in a 3-D MMIC process. The session ends with a paper that addresses metamorphic InP HBT technology that may enable significant cost savings by putting high performance InP devices on low-cost GaAs substrates.

TH3F-1:
A 1-10 GHz 0.18 µm CMOS Chipset for Multi-mode Wireless Applications
M. Madihian, H. Fujii, H. Yoshida, H. Suzuki, T. Yamazaki

TH3F-2:
A 0.18 µm Foundry RF CMOS Technology with 70 GHz FE for Single Chip System Solutions
H.M. Hsu, J.Y. Chang, C.C. Tsai, C.W. Chen, J.M. Huang, S.C. Wong, C.H. Chen, T.H. Yeh, C.H. Lin, Y.C. Sun, J.G. Su, C.Y. Chang

TH3F-3:
Deep Trench Guard Technology to Suppress Coupling between Inductors in Silicon RF ICs
C. Kim, P. Park, J. Park, N. Hwang, H. Yu

TH3F-4:
Physics and Compact Modeling of SOI Substrates with Buried Ground Plane (GPSOI) for Substrate Noise Suppression
S. Stefanou, J.S. Hamel, M. Bain, P. Baine, B. Armstrong, H.S. Gamble

TH3F-5:
Low Loss Passive Components on BCB-based 3-D MMIC Technology
K. Nishikawa, B. Piernas, K. Araki, S. Sugitani, T. Ishii, K. Inoue, K. Kamogawa

TH3F-6:
Microwave Noise and Power Performance of Metamorphic InP Heterojunction Bipolar Transistors (HBTs)
S. Halder, Y.Z. Xiong, G.I. Ng, H. Wang, H. Zheng, K. Radhakrishnan, J.C. Hwang


2:30­5:00 pm

THIF Interactive Forum

THIF-1:
Generalized Multi-gridding Technique for the TLM Method using the Symmetrical Super-condensed Node (SSCN)
G.N. Mulay, D.S. Jog

THIF-2:
A Novel Adaptive Approach to Modeling MEMS Tunable Capacitors using MRTD and FDTD Techniques
N.A. Bushyager, M.M. Tentzeris, L.J. Gatewood, J.F. DeNatale

THIF-3:
A Multi-threaded Time Domain TLM Algorithm for Symmetric Multi-processing Computers
P.P. So, W.J. Hoefer

THIF-4:
Construction of Solutions to Electromagnetic Problems in Terms of Two Co-linear Vector Potentials
N. Georgieva

THIF-5:
Analysis of Lumped Element Transistor Structures using MRTD: The Equivalent Source Method
R.L. Robertson, L.P. Katehi

THIF-6:
Efficient Time-domain Electromagnetic Analysis using CDF Biorthogonal Wavelet Expansion
T. Dogaru, L. Carin

THIF-7:
A Wavelet-based FDTD-multigrid-method
M. Walter, P. Waldow, I. Wolff

THIF-8:
Analysis and Design of a Planar Antenna for a Millimeter-wave Emitter using TLM
K.P. Heppenheimer, L. Vietzorreck, P. Russer

THIF-9:
Analysis of Differential Vias in a Multilayer Parallel Plate Environment using a Physics-based CAD Model
R. Abhari, G.V. Eleftheriades, E. van Deventer-Perkins

THIF-10:
3D-FDTD Subgridding Technique Applied to Radiating Structures
M. Bonilla, G. Alquie, V. Fouad Hanna, M. Wong, J. Wiart

THIF-11:
Enhanced Forward Coupling Phenomena between Microstrip Lines on Periodically Patterned Ground Plane
C. Chang, Y. Qian, T. Itoh

THIF-12:
Coupled TLM-thermal Analysis in the Time Domain
W. Liu, P.P. So, W.J. Hoefer

THIF-13:
Lumped and Distributed Device Embedding Techniques in Time Domain TLM Field Models
J. Park, P.P. So, W.J. Hoefer

THIF-14:
Analysis of Multiport Waveguide Structures by a Higher-order FDTD Methodology Based on Non-orthogonal Curvilinear Grids
N.V. Kantartzis, T.I. Kosmanis, T.D. Tsiboukis, M. Gatzianas

THIF-15:
FDTD Study of Resonance Processes in Microstrip Ring Resonators with Different Excitation Geometries
E. Semouchkina, W. Cao, R. Mittra

THIF-16:
An Unconditionally Stable Finite Element Time Domain Solution of Active Nonlinear Microwave Circuits using Perfectly Matched Layers
H. Tsai, Y. Wang, T. Itoh

THIF-17:
Optimal Shape Design of Dielectric Structure using FDTD and Topology Optimization
Y. Chung, C. Cheon

THIF-18:
Electronic Design Assistance Tool for Circuit Optimization. Application to Microwave Power Amplifiers.
C. Duperrier, M. Campovecchio, J. Rousset, R. Quere, S. Mons, A. Mallet, L. Lapierre

THIF-19:
Nonlinear Statistical Modeling of Large-signal Device Behavior
W. Stiebler, F. Rose, J. Selin

THIF-20:
A Computer Aided Design Technique for Hybrid and Monolithic Microwave Amplifiers Employing Distributed Equalizers with Lumped Discontinuities
A. Aksen, B. Yarman

THIF-21:
Statistical Construction of a Representative CAD Model from a Measured Population for RF Design Applications
W. Leiker, K. Naishadham

THIF-22:
SMX - A Novel Object-oriented Optimization System
M.H. Bakr, J.W. Bandler, Q.S. Cheng, M.A. Ismail, J.E. Rayas-Sanchez

THIF-23:
A Robust Algorithm for Automatic Development of Neural Network Models for Microwave Applications
V.K. Devabhaktuni, M.C. Yagoub, Q. Zhang

THIF-24:
Steady-state Determination for RF Circuits using Krylov-subspace Methods in SPICE
M.A. Kleiner, M.N. Afsar

THIF-25:
Interactive "Visual" Design of Matching and Compensation Networks for Microwave Active Circuits
L.I. Babak, M.V. Cherkashin

THIF-26:
Efficient Sensitivity Analysis of Lossy Multiconductor Transmission Lines with Nonlinear Terminations
A. Dounavis, R. Achar, M. S. Nakhla

THIF-27:
Software Tool for the Design of Narrow Band Band Pass Filters
A. García-Lampérez, M. Salazar-Palma, M. Padilla, I. Hidalgo-Carpintero

THIF-28:
Optimization of Waveguide Diplexers using Shadow Specifications
D.A. Cargill, T. Dolan, P. Pramanick

THIF-29:
Micromachined RF MEMS Tunable Capacitors using Piezoelectric Actuators
J.Y. Park, Y.J. Yee, J.U. Bu

THIF-30:
Digitally Controllable Variable High Q MEMS Capacitor for RF Applications
N.D. Hoivik, Y.C. Lee, K.C. Gupta, V.M. Bright

THIF-31:
Nonlinear Electro-mechanical Modeling of MEMS Switches
J.B. Muldavin, G.M. Rebeiz

THIF-33:
An Electromechanical Model for MEMS Switches
D. Mercier, P. Blondy, D. Cros, P. Guillon

THIF-34:
Digital Generation of RF Signals for Wireless Communications with Band-pass Delta-Sigma Modulation
J.S. Keyzer, J.M. Hinrichs, A.G. Metzger, M. Iwamoto, I. Galton, P.M. Asbeck

THIF-35:
A CMOS 6-bit, 1 GHz ADC for IF Sampling Applications
K. Uyttenhove, M. Steyaert, K.U. Leuven

THIF-36:
A Silicon-on-insulator 28 V RF Power LDMOSFET for 1 GHz Integrated Power Amplifier Applications
E.A. McShane, K. Shenai, S. Leong

THIF-37:
Receiving Weak Signals with a Software GPS Receiver
D.M. Lin, J.B. Tsui

THIF-38:
Simple Design Equations for Broadband Class E Power Amplifiers with Reactance Compensation
A. Grebennikov

THIF-39:
Multi-harmonic Tuning Behavior of MOSFET RF Power Amplifiers
Y. Zhang, C. Salama

THIF-40:
Study of Self-heating Effects in GaN HEMTs
S. Nuttinck, E. Gebara, J. Laskar, M. Harris

THIF-41:
InGaP PHEMTs for Wireless Power Applications
E.Y. Lan, B. Pitts, O. Hartin, M. Mikhov

THIF-42:
Novel Asymmetric Gate-recess Fabrication Technique for Sub-millimeter-wave InP-based HEMTs
K. Shinohara, T. Matsui, T. Mimura, S. Hiyamizu

THIF-43:
A Calibrated RF/IF Monolithic Vector Analyzer
J.C. Cowles, B. Gilbert

THIF-44:
Design Techniques of Reducing Chip Area and Highly Integrated MMIC for W-band Application
Y. Mimino, K. Nakamura, K. Sakamoto, Y. Aoki, S. Kuroda, T. Tokumitsu

THIF-45:
A Novel Accurate Design Method for the Hairpin Type Coupled Line Bandpass Filters
J.S. Yun, J.S. Park, D. Ahn, K.S. Choi, J. Kim

THIF-46:
Hairpin Filters with Tunable Transmission Zeros
C. Tsai, S. Lee, C. Tsai

THIF-47:
Adjustment of a Temperature Compensated Ka-band Ring Resonator VCO using Fully Automated Laser-trimming
M. Schallner, W. Konrath

THIF-48:
Monolithic Quantum Tunnel Diode-based C-band Oscillator and LNA
J.I. Bergman, S. Han, J. Laskar, N. El-Zein, S. Ageno, M. Deshpande, V. Nair

THIF-49:
Calibrated Linear and Nonlinear Pulsed RF Measurements on an Amplifier
P. Vael, Y. Rolain, C. Gaquiere, H. Gerard

THIF-50:
Measurement of Group Velocities of Various Microwave Transmission Lines via FM Reflectometry
Y. Park, J. Lee, H. Tae

THIF-51:
Millimeter-wave Measurements of Temperature Dependence of Complex Permittivity of GaAs Plates by a Circular Waveguide Method
T. Shimizu, Y. Kobayashi

THIF-52:
Infrared Temperature Characterization of High Power RF Devices
M. Mahalingam, E.C. Mares

THIF-53:
Near-field Microwave Microscopy of Thin Film Resonators
J. Herbsommer, H. Safar, P.L. Gammel, B.P. Barber, M. Zierdt

THIF-54:
28 GHz LMDS Channel Measurements and Modeling for Parameterized Urban Environments
C. Briso, M. Vazquez, J.I. Alonso

THIF-55:
C/Ku-band Pulsed Transmitters for Poseidon 2 Altimeter
A. Darbandi, G. Michaud, H. Buret, J. Touchais, J. Fourcroy, J. Bulgarelli

THIF-56:
The RF Module Design for W-CDMA/GSM Dual Band and Dual Mode Handset
X.W. Zhu, W. Hong, J.Y. Zhou, L. Tian

THIF-57:
Bias Control Technique for CDMA Driver Amplifier to Decrease Current
J. Ko, H. Kim, S. Yang, B. Kim, B. Park

THIF-58:
Multi-carrier Microwave Breakdown in Air-filled Components
U. Jordan, D. Anderson, M. Lisak, T. Olsson, V.E. Semenov

THIF-59:
Analysis of Proposals to Reduce SAR Levels from GSM Terminals
V. Ferrer Perez, L. Nuño Fernandez, J. Balbastre Tejedor

THIF-60:
High Accuracy Digital 5-bit 0.8-2 GHz MMIC RF Attenuator for Cellular Phones
N. Kinayman, M. Bonilla, M. Kelcourse, J. Redus, K. Anderson

THIF-61:
Micromachined 60 GHz GaAs Power Sensor with Integrated Receiving Antenna
K. Mutamba, A. Megej, E. Genc, A. Fleckenstein, H. L. Hartnagel, K. Beilenhoff, R. Doerner, P. Heyman, J. Dickmann, C. Woelk

THIF-62:
A Sensor System Based on SiGe MMICs for 24 GHz Automotive Applications
C.N. Rheinfelder, S.M. Lindenmeier, J.F. Luy, C. Willner, A. Schüppen

THIF-63:
Acoustic Sensing using Radio Frequency Detection and Capacitive Micromachined Ultrasonic Transducers
S.T. Hansen, A.S. Ergun, B.T. Khuri-Yakub, Edward L. Ginzton

THIF-64:
Millimeter-wave Printed Circuit Antenna System for Automotive Applications
V.V. Denisenko, A.G. Shubov, A.V. Majorov, E.N. Egorov, N.K. Kashaev

THIF-65:
Spectrum Correlation of Beat Signals in the FM-CW Radar Level Meter and Application for Precise Distance Measurement J.C. Chun, T.S. Kim, J.M. Kim, Z.S. Lim, W.S. Park

THIF-66:
K-band Direct Detect MMIC SI Micromachined Radiometer
M. Smith, J. Culver, B.S. Roeder, T. Weller, C. Trent, J. Naylor

THIF-67:
A Rugged Active Sensor for Microwave Aquametry
G. Avitabile, N. Sottani, G. Biffi Gentili


3:30­5:10 pm

TH4A Packaging Interconnect Techniques

Chair: J. Laskar Co-chair: M. Harris

The majority of the papers in this session present investigations on various aspects of interconnect technology. The session begins with three papers on flip-chip and ball- grid array techniques. The next four papers describe work on transition and interconnect techniques between various transmission lines. The final paper discusses an approach for automatic tuning of filters for high volume production techniques.

TH4A-1:
Broadband Time-domain Characterization of Multiple Flip-chip Interconnects
P. Li, K. Chin, H. Wu, T. Li, W. Sui

TH4A-2:
Ka band Power PHEMT Technology for Space Power Flip-chip Assembly
E. Rogeaux, S. George, D. Pons, P. Fellon, D. Geiger, D. Theron, N. Haese, S. Verdeyme, R. Quere, D. Baillargeat, R. Ngoya, S. Long, L. Escotte

TH4A-3:
Design and Analysis of Low Cost IC Package Solution for 10 Gbit/s Applications
M.A. Megahed, P. Zilaro, M. Khaw

TH4A-4:
LTCC as MCM Substrate: Design of Strip-line Structures and Flip-chip Interconnects
F.J. Schmückle, A. Jentzsch, W. Heinrich, J. Butz, M. Spinnler

TH4A-5:
Vertical Transitions in Low Temperature Co-fired Ceramics for LMDS Applications
A. Panther, J.S. Wight, C. Glaser, M.G. Stubbs

TH4A-6:
Characterization of High Density Micromachined Interconnects
J.L. Haley, R.F. Drayton

TH4A-7:
Design and Optimization for Coaxial-to-microstrip Transition on Multilayer Substrate
H. Liang, J. Laskar, H. Barnes, D. Estreic

TH4A-8:
Temperature Compensated Planar Narrow-band Notch Filter with Fully Automated Laser-trimming
M. Schallner

TH4B Frequency Domain EM Techniques

Chair: R. Sorrentino Co-chair: J. Rautio.

Frequency domain electromagnetic (EM) techniques have become a critical part of the high frequency design process. This session describes enhancements to EM techniques for future design efforts. One paper discusses a new approach to gradient evaluation appropriate for optimization of circuits using EM analysis, and another paper describes improved efficiency for mode matching analysis of waveguide junctions. The remaining papers describe modifications that result in improved speed of analysis for planar circuits.

TH4B-1:
MoM/BI-RME Analysis of Boxed Microwave Circuits Based on Arbitrarily Shaped Elements
M. Bozzi, L. Perregrini, G. Conciauro, A. Alvarez Melcon, M. Guglielmi

TH4B-2:
Fast Electromagnetic Analysis of Dense Shielded Integrated Circuits using the Adaptive Integral Method (AIM)
V.I. Okhmatovski, A.C. Cangellaris

TH4B-3:
Full Wave Analysis of Electromagnetic Coupling in Realistic RF Multilayer PCB Layouts using Cascaded Parallel Plate Waveguide Model
M.R. Abdul-Gaffoor, H.K. Smith, A.A. Kishk, A.W. Glisson

TH4B-4:
A New Global-analysis Model for Microwave Circuits with Lumped Elements
C. Wang, H. Wang, C. Chen

TH4B-5:
Analysis of Multi-layer Integrated Inductors with Wave Concept Iterative Procedure(WCIP)
S. Akatimogool, D. Bajon, H. Baudrand

TH4B-6:
Numerical Cost of Gradient Computation within the Method of Moments and its Reduction using a Novel Boundary-layer Concept
S. Amari

TH4B-7:
Automated Intelligent Mode Selection for Fast Mode Matching Analysis of Waveguide Discontinuities
C.A. Vale, P. Meyer

TH4C Low Noise Components and Techniques

Chair: P. Smith Co-chair: L. Boglione

This session presents advances in state-of-the-art low noise amplifiers and noise modeling techniques. Two millimeter-wave InP low noise amplifiers, one hybrid and the other monolithic, report record low noise performance. The next paper proposes an analytical model for estimating the dynamic range of an FET amplifier. The final two papers describe noise models for HBTs in GaInP/GaAs and InP/InGaAs technologies. The first includes the low frequency noise and the second establishes scaling rules for HBTs.

TH4C-1:
A 183 GHz Low Noise Amplifier Module 7.1 dB Noise Figure for the Conical-scanning Microwave Imager (CMIS) Program
B. Osgood, M. Barsky, M. Sholley, R. Quon, G. Barber, P. Liu, P. Chin, R. Lai, M. Nishimoto, R. Raja, F. Hinte

TH4C-2:
Low Noise Amplifiers in InP Technology for Pseudo Correlating Millimeter-wave Radiometer
P. Kangaslahti, N. Hughes, T. Cong, J. Tuovinen, T. Karttaavi, T. Gaier, D. Dawson, S. Weinreb, P. Sjöman

TH4C-3:
Simple Model for Dynamic Range Estimate of GaAs Transistors
Z. M. Nosal

TH4C-4:
Modeling of Low Frequency Noise in GaInP/GaAs Hetero-bipolar Transistors
P. Heymann, M. Rudolph, R. Doerner, F. Lenk

TH4C-5:
Microwave Noise and Small-signal Parameters Scaling of InP/InGaAs DHBT with High DC Current Gain
Y. Xiong, G. Ng, H. Wang, C. Law

TH4D Microwave Applications of Superconductivity

Chair: C. Jackson Co-chair: M. Nisenoff

Superconductive technology enables high performance in a wide range of microwave applications. Papers in this session describe satellite based oscillators, wireless filters, photonic interfaces, and laboratory test equipment.

TH4D-1:
An All-cryogenic Low Phase Noise Hybrid K-band Oscillator for Satellite Communication
S. Vitusevich, I.S. Ghosh, N. Klein, K. Schieber, M. Spinnler

TH4D-2:
Dual 5 MHz PCS Receiver Front End
E.R. Soares, K.F. Raihn, J.D. Fuller

TH4D-3:
Compact Quasi-lumped Element HTS Microstrip Filters
H.T. Su, F. Huang, M.J. Lancaster

TH4D-4:
Optoelectronic RF Harmonic Generation and Mixing in High-Tc Superconducting Film
A.H. Majedi, S.K. Chaudhuri, R. Mansour, S. Safavi-Naeini

TH4D-5:
Novel Method for Calculation and Measurement of Unloaded Q-factor of Superconducting Dielectric Resonators
M.V. Jacob, J. Mazierska, K. Leong, J. Krupka

 

Friday, May 25, 2001


8:00 am­12:00 pm

WFA: Industrial Applications of Electromagnetic (EM) Solvers

This workshop will explore the extent to which electromagnetic (EM) solvers are being successfully used in industrial applications. The workshop will attempt to identify the successful uses, the practical ramifications of solver limitations, and identify those areas where solver developers need to focus their future work. Accordingly, the workshop will have a three-fold focus as follows:

1. To learn about the successful applications of EM solvers to problems faced by the industrial community. It is anticipated that frequency-domain solvers are more mature and are finding their way into use. We want to learn about these successes. However it will also be of considerable interest to learn whether industry has made progress in applying time-domain solvers. It will be of interest to learn whether EM solvers are being used to study EM interactions of circuit features that are supposed to be isolated within packages

2. To learn about how the time- (and possibly storage-) intensive nature of these computations is limiting the application of EM solvers in the industrial setting. It will be of interest to learn how this affects the types of problems for which industrial users find them valuable. It will be of interest to learn whether industry is making use of the ability of time-domain EM solvers to address nonlinear behavior in components.

3. To learn about those aspects of EM solvers that industrial users would like to see improved. Are solvers as user-friendly as they need to be? To what extent can a traditional RF or microwave design engineer make use of these solvers without dedicating their career to becoming the guru on this subject within their company? What kind of advancements need to be made in the state of commercially available EM solvers? For which computing platforms and operating systems is it desired to have EM solvers available?

WFB: RF Passive Component Evaluation Techniques

Today's wireless electronic equipment is continuing to place more stringent requirements on RF components. The advent of new technology RF components is giving circuit designers the ability to meet their requirements if they can verify how those components actually will work in their designs.

This workshop will cover impedance measurements including definitions, measurement technique selection, compensation and error-correction, and fixturing. The impedance portion will close with a discussion and measurement examples of RF inductors and capacitors. The workshop will also review basic 2-port device evaluation with an emphasis on RF filters.


Monday, May 21, 2001


8:00­11:00 am

MON1A Advances in RF CMOS RFIC Plenary Session

Chair: D. Lovelace Co-chair: S. Kiaei

The Plenary session focus will be on the next generation of RF technologies. The first keynote talk will address wireless LAN and the second keynote talk will discuss the next generation of high frequency, high speed CMOS frequency generation circuits.

MON1A-1:
Invited: Wireless LASN Revolution: From Silicon to Systems
T.H. Meng, B. McFarland

MON1A-2:
Keynote Paper: Recent Advances in RF CMOS
A. Hajimiri


10:20­11:40 am

MON2A W-CDMA Transceivers

Chair: N. Camilleri Co-chair: S. Heinen

This session describes state-of-the-art developments in RFICs for W-CDMA transceiver applications.

MON2A-1:
A W-CDMA Zero-IF Front-end for UMTS in a 75 GHz SiGe BiCMOS Technology
H. Pretl, W. Schelmbauer, L. Maurer, H. Westermayr, R. Weigel, B. Klepser, B. Adler, J. Fenk

MON2A-2:
Dual-Band/Tri-Mode Receiver IC for N- and W-CDMA Systems Using 6"-PHEMT Technology
B. McNamara, S. Zhang, M. Murphy, H.M. Banzer, H. Kapusta, E. Rohrer, T. Grave, L. Verweyen

MON2A-3:
High Performance Quadrature Modulators for Broadband Wireless Communication
B. Sam, P. Halford

MON2A-4:
A Versatile Receiver IC Supporting W-CDMA, CDMA and AMPS Cellular Handset Applications
K. Rampmeier, B. Agarwal, P. Mudge, D. Yates, T. Robinson

MON2A-5:
Fully Integrated W-CDMA IF Chip-set for UMTS Mobiles
W. Thomann, J. Fenk, R. Weigel, R. Hagelauer

MON2B Power Amplifiers: Technology & Performance

Chair: B. Thompson Co-chair: F. Ali

This session covers RF power amplifier design and performance. Submissions include circuit designs in InGaP HBTs, SiGe HBTs, Si CMOS, and SOI LDMOS semiconductor technologies. The first paper in the session describes the design and performance of a 50 percent efficient WCDMA PA fabricated in InGaP HBT technology. A flip-chip SiGe HBT amplifier operating in the 1.8 GHz frequency band is reported in the second paper. A novel capacitance cancellation technique applied to a CMOS Class AB power amplifier is presented. The final paper in this session evaluates the RF power and PAE performance of the LDMOSFET in both Silicon and SOI.

MON2B-1:
A 50 Percent Efficiency InGaP/GaAs HBT Power Amplifier Module for 1.95 GHz W-CDMA Handsets
T.B. Nishimura, M. Tanomura, K. Azuma, K. Nakai, Y. Hagegawa, H. Shimawaki

MON2B-2:
SiGe-power Amplifiers in Flip-chip and Packaged Technology
W. Bischof, M. Alles, S. Gerlach, A. Kruck, A. Schueppen, J. Sinderhauf, H. Wassener

MON2B-3:
A Nonlinear Capacitance Cancellation Technique and its Application to a CMOS Class AB Power Amplifier
C. Wang, L.E. Larson, P.M. Asbeck

MON2B-4:
Student: RF Power Performance of LDMOS FETs on SOI: An Experimental Comparison with Bulk Si LDMOS FETs
J.G. Fiorenza, J.A. del Alamo

MON2C Frequency Generation

Chair: A. Jerng Co-chair: Y. Deval

This session describes CMOS and BiCMOS oscillators and synthesizers for commercial wireless applications.

MON2C-1:
A 0.35 µm CMOS 2.5 GHz Complementary-Gm VCO using PMOS Inversion Mode Varactors
R.L. Bunch, S. Raman

MON2C-2:
HiperLAN 5.4 GHz Low Power CMOS Synchronous Oscillator
Y. Deval, J. Begueret, A. Spataro, P. Fouillat, D. Belot, F. Badets

MON2C-3:
High Performance Flip-chip Multi-mode, Multi-band VCO IC using a Standard Low Cost BiCMOS Process
D. Lovelace, R. Disilvestro

MON2C-4:
A 5.7 GHz HiperLAN SiGe BiCMOS Voltage-controlled Oscillator and Phase-locked-loop Frequency Synthesizer
B.H. Klepser, M. Scholz, J.J. Kucera

MON2C-5:
A Fully Integrated PLL Frequency Synthesizer LSI for Mobile Communication System
T. Yasunaga, S. Hirano, Y. Miyahara, M. Maeda, Y. Hiraoka

MON2D Next Generation Front End Design

Chair: K. Ashby Co-chair: S. Lloyd

This session presents the next generation techniques for removing external RF image filters.

MON2D-1:
A Flexible 10-300 MHz Receiver IC Employing a Bandpass Sigma-Delta ADC
R. Schreier, J. Lloyd, L. Singer, F. Weiss, B. Sam, D. Paterson, C. Jacobs, J. Steinheider, M. Timko, J. Zhou, W. Martin

MON2D-2:
A Completely Integrated 1.8 V 5 GHz Tunable Image Reject Notch Filter
J.W. Rogers, C. Plett

MON2D-3:
A Monolithic 2 V 950 MHz CMOS Bandpass Amplifier with a Notch Filter for Wireless Receivers
C. Guo, A.N. Chan, H.C. Luong

MON2D-4:
Tuned LNA for RFICs using Boot-strapped Inductor
F. Albertoni, B. Neri, E. Sentieri, L. Fanucci


1:30­2:30 pm

MON3A GPS Special Session

Chair: R. Harjani Co-chair: J. Choma

This invited session will examine RF and system issues for the Global Positioning System (GPS) for the wireless handsets.

MON3A-1:
Invited: GPS: Systems Overview
S. Kiaei

MON3A-2:
Invited: A 2/4 GHz CMOS Transceiver for Bluetooth
H. Darbi, S. Khorrahj, E. Chein, M. Pan, S. Wu, S. Moluodi, J. Leete, J. Rael, R. Lee, B. Ibrahim, M. Rofougaran, R. Rofougaran

MON3A-3:
A Highly Integrated GPS Receiver for Cellular Handset
F. Dantoni, A. Holden, S. Fu, D. Sahu, S. Venkatraman, S.H. Embabi


3:30­4:50 pm

MON4A Integrated Bluetooth Transceivers

Chair: B. Kuhn Co-chair: D. Allsot

This session will address the progress in Bluetooth transceiver designs.

MON4A-2:
The First Very Low IF RX, 2-Point Modulation TX CMOS System on Chip Bluetooth Solution
C. Dürdodt, M. Friedrich, C. Grewing, M. Hammes, A. Hanke, S. Heinen, J. Oehm, D. Pham-Stäbner, D. Seippel, S. van Waasen, E. Wagner, D. Theil

MON4A-3:
A Fully Integrated CMOS Frequency Synthesizer for Bluetooth
D. Theil, K. Schumacher, C. Dürdodt, A. Hanke, S. Heinen, S. van Wasaen, D. Seippel, D. Pham-Stäbner

MON4A-4:
Student-designed Bluetooth Radio in Silicon-on-Sapphire
W.B. Kuhn

MON4A-5:
A 2.5 V CMOS Switched-capacitor Channel-select Filter with Image Rejection and Automatic Gain Control
Y. Chen, J. Bor, P. Huang

MON4B RFIC Packaging & Passive Components

Chair: J. Staudinger Co-chair: M. Kumar

Successful development of RF integrated circuits requires accurate modeling of both passive and active components. In addition to on-chip passive components, the selected package for the IC is an important consideration in realizing high performance. Additionally, probing techniques applied at the circuit board level can provide further insight into complex interactions. This session will focus on advances reported in these areas.

MON4B-1:
Design and Modeling of Compact On-chip Transformer/Balun Using Multi-level Metal Windings for RF Integrated Circuits
T. Liang, J. Gillis, D. Wang, P. Cooper

MON4B-2:
A Complete Physical Frequency Dependent Lumped Model for RF Integrated Inductors
J.J. Sieiro, J.M. Lopez-Villegas, J. Cabanillas, J.A. Sorio, J. Samitier

MON4B-3:
Microwave Filters on a Low Resistivity Si Substrate with a Polyimide Interface Layer for Wireless Circuits
J. Papapolymerou, G.E. Ponchak

MON4B-4:
On-board Probing of Broadband RF Amplifiers using CPW Interconnects
K. Naishadham

MON4B-5:
Modeling of Lead-frame Plastic CSPs for Accurate Prediction of Their Low-Pass Filter Effects on RFICs
T. Horng, S. Wu, H. Huang, C. Chiu, C. Hung

MON4C Active Device Modeling for RFIC Applications

Chair: L. Liu Co-chair: V. Nair

Current RFIC applications emphasize active device operation at higher frequencies, better linearity, and greater output power. This session will report on new techniques in modeling and describing non-linear device characteristics and performance.

MON4C-1:
RF Circuit Performance Degradation Due to Soft Breakdown and Hot Carrier Effect in 0.18 µm CMOS Technology
Q. Li, J. Zhang, W. Li, J.S. Yuan, Y. Chen, A. Oates

MON4C-2:
Reduced Intermodulation Distortion of AlGaAs/InGaAs Doped-channel FETs by Air-bridge Gate Process
H. Chiu Hsien Chin, F. Chien Feng Tso, S. Yang Shih Cheng, Y. Chan Yi Jen

MON4C-3:
Systematic Analysis of RF Distortion in SiGe HBTs
G. Niu, Q. Liang, J.D. Cressler, C.S. Webster, D.L. Harame

MON4C-4:
Field-modulating Plate (FP) InGaP MESFET with High Breakdown Voltage and Low Distortion
A. Wakejima, K. Ota, K. Matsunaga, W. Contrata, M. Kuzuhara

MON4C-5:
Large Signal Bias-dependent Modeling of PHEMTs by Pulsed Measurements
K. Lan, B.L. Ooi, M.S. Leong, P.S. Kooi

MON4D High Frequency Devices & IC Techniques

Chair: J. Mondal Co-chair: A. Gupta

This session presents recent advances in various high frequency transceiver components (VCOs, LNAs, Mixers, Trans-impedance Amplifiers, Attenuators) using state-of-the-art InP HBTs and a low cost BiCMOS process. Circuit techniques are adopted to leverage the material properties and stretch the device performance of BiCMOS process.

MON4D-1:
20 GHz INP-HBT Voltage-controlled Oscillator with Wide Tuning Range
H. Djahanshahi, N. Saniei, C. Salama, S.P. Voinigescu, M.C. Maliepaard

MON4D-2:
The Design of CMOS Transimpedance Amplifier Based on BSIM Large-signal Model
C. Kuo Chin Wei, C. Hsiao Chao Chih, S. Yang Shih Cheng, Y. Chan Yi Jen

MON4D-3:
Monolithic Ka-band Even-harmonic Quadrature Resistive Mixer for Direct Conversion Receivers
K.S. Ang, M. Chongcheawchamnan, D. Kpogla, P.R. Young, I.D. Robertson, D. Kim, M. Ju, H. Seo

MON4D-4:
Compensation of MMIC Spread in 60 GHz Telecommunication Module by Automatic Output Power Control
M. Filleboeck, J. Schroth

MON4D-5:
A 23 GHz Low Noise Amplifier in SiGe Heterojunction Bipolar Technology
G. Schuppener, T. Harada, Y. Li


1:20-2:40 pm

TUE3A RF Transceivers

Chair: S. Heinen Co-chair: N. Camilleri

The session describes the progress of transceivers for emerging applications in the automotive, optical, and paging fields.

TUE3A-1:
A Single Chip ASK/FSK 900MHz Transceiver in a Standard 0.25 µm CMOS Technology
W. Schuchter, G. Hofer, G. Krasser, H. Koblmiller, V. Schultheiss, A. Dollinger, M. Mark

TUE3A-2:
A Highly Integrated UHF Data Receiver for Vehicle Applications
D. T. Jobling, D. Frund, C. Landez, A. Huot

TUE3A-3:
1 W 900 MHz Direct Conversion CMOS Transmitter for Paging Applications
D. Gerna, A. Giry, D. Belot, D. Pache, D. Manstretta

TUE3A-4:
A One Chip RF Transceiver MMIC for ETC with Surface Via-hole Isolation Technique
S. Yamamoto, A. Suwa, T. Tanbo, T. Kitazawa, K. Tara, M. Hagio

TUE3A-5:
A 1-5 GHz Low Power Single-chip Receiver IC for Optical Video Distribution System
T. Oka, T. Ikedo, K. Nojima, K. Fujimoto

TUE3F Control Circuits for Receivers and Transmitters

Chair: F. Ali Co-chair: B. Thompson

This session concentrates on RF and DC control circuitry for the Rx and Tx components. A power controller circuit for a dual-band TDMA PA realized in silicon technology is presented in the first paper. A logarithmic CMOS detector circuit having 50 dB dynamic range and operating at 450 MHz is described in the next paper. The third paper describes an antenna/switch filter module integrating GSM/DCS/PCS diplexer functions, and a performance enhancement antenna switching circuit using a LTCC substrate. The final paper in the session presents the results of a silicon bipolar based PCS band CDMA PA with an integrated impedance control biasing scheme.

TUE3F-1:
Power Controller for Dual Band TDMA Power Amplifiers
S. Weber

TUE3F-2:
A 450 MHz CMOS RF Power Detector
S. Ho

TUE3F-3:
Design of an LTCC Switch Diplexer Frond-end Module for GSM/DCS/PCS Applications
R. Lucero, W. Qutteneh, D. Meyers, A. Pavio, J. Estes

TUE3F-4:
A Monolithic Si PCS-CDMA Power Amplifier with an Impedance-controllable Biasing Scheme
S. Luo, T. Sowlati


3:30-4:50 pm

TUE4A Low Noise Amplifiers (LNAs) Joint IMS/RFIC Session

Chair: S. Lloyd Co-chair: K. Ashby

This session covers building block LNAs for mobile communications using a range of advanced technologies

TUE4A-1:
A Wide Dynamic Range Switched-LNA in SiGe BiCMOS
T. Nakatani, J. Itoh, I. Imanishi, O. Ishikawa

TUE4A-2:
Dual Bias Feed SiGe HBT Low Noise Linear Amplifier
E. Taniguchi, K. Maeda, N. Suematsu, T. Takagi, T. Ikushima, K. Sadahiro, K. Itoh

TUE4A-3:
A 1.4 dB NF Variable Gain LNA with Continuous Control for 2 GHz-band Mobile Phone using InGaP Emitter HBT
Y. Aoki, M. Fujii, H. Dodo, H. Hida, S. Ohkubo, S. Yoshida, T. Niwa, Y. Miyoshi, N. Goto

TUE4A-4:
A 1.7 mA Low Noise Amplifier with Integrated Bypass Switch for Wireless 0.05-6 GHz Portable Applications
H. Morkner, M. Frank, S. Yajima

TUE4F Building Block Front Ends

Chair: S. Lloyd Co-chair: K. Ashby

This session presents innovative and high performance front end (LNA + Mixer) designs for mobile communications

TUE4F-1:
1.8 V RF AGC and Mixer Implemented with a Novel Four-terminal HBT (FHBT)
S. Zhou, P. Ma, L. Zhang, J. Li, F. Chang, P. Zampardi

TUE4F-2:
Design and Performance of a Highly Integrated Wideband Active Downconverter MMIC
C.F. Campbell, J.M. Beall

TUE4F-3:
A 2.5 GHz Low Noise High Linearity LNA/Mixer IC in SiGe BiCMOS Technology
D. Wang, K. Krishnamurithi, S. Gibson, J. Brunt

TUE4F-4:
A 1.9 GHz Double-balanced Subharmonic Mixer for Direct Conversion Receivers
K. Nimmagadda, G.M. Rebeiz

TUE4F-5:
A 1 GHz-band Low Distortion Up-converter with a Linear in dB Control VGA for Digital TV Tuner
Y. Youn, C. Kim, N. Kim, H. Yu



Friday, May 25, 2001
Crowne Plaza Hotel

7:00 am­4:00 pm
Registration, Grand Ballroom Foyer

7:00­4:00 pm
Exhibition, Grand Ballroom South

7:00 am­8:00 am
Continental Breakfast, Grand Ballroom South

7:00 am­8:00 am
Speaker's Breakfast, Hopi Room B

8:00 am­10:00 am
Technical Session 1, Grand Ballroom North

10:00 am­11:00 am
Exhibition/Poster Session, Grand Ballroom South

11:00 am­12:00 Noon
Technical Session 2, Grand Ballroom North

12:00 Noon­1:30 pm
Luncheon, Pueblo Room

1:30 pm­3:00 pm
Technical Session 3, Grand Ballroom North

3:00 pm­4:00 pm
Exhibition/Poster Session, Grand Ballroom South

4:00 pm­5:00 pm
Technical Session 4, Grand Ballroom North


Tuesday, May 21, 2001

1:00­5:00 pm

A New Family of Si LDMOS Power Devices for 3G Communications Applications, E. James Crescenzi, Jr.; High Voltage Silicon Device Structures Increase Peak Power Capability, Bob Davidson; Application of Digital Predistortion to RF LDMOS Power Amplifiers for Narrow-band CDMA Systems, David Runton, Chris Thron, Emmanuel Roy; Characterization of 125 W Single-ended Power Discrete LDMOS Device for W-CDMA Base Station Amplifier Application, Antoine Rabany, Long Nguyen, John Kinney; LDMOS vs. VDMOS ­ How to Choose, S.K. Leong; Commercial MMIC Solutions for Broadband Wireless Access and Optoelectronic Applications, G.D. Edwards, R.J. Cleaver, A.S. Cornelius, M.W. Green; Silicon Carbide (SiC) MESFET Power Transistors ­ Ideal for 3G Systems, Tom Dekker; Plastic, A New Packaging Option for High Power RF Devices, Darin Wagner, Alex Elliot, Antoine Rabany, Long Nguyen; RF Components for Multi-band Mobile Phones, Shigeru Kemmochi; MHPA19120 ­ LDMOS Power Amplifier for 1.9 GHz CDMA Applications, Jeffrey Jones; CATV Power Amplifiers ­ Improved Performance with GaAs PHEMT, Scott Craft; High Power Pulse Amplifiers Using LDMOS, Douglas M. Macheel, Lee B. Max


Wednesday, May 23, 2001

9:00­11:50 am

QuickWave Electromagnetic Software, Malgorzata Celuch; QWED; IE3D 8.0 ­ Memory and Time Efficient Electromagnetic Simulator for Open and Boxed Structures, Jian-X. Zheng; MDSPICE 2.0 ­ A Robust S-0 parameter SPICE Simulator Meets the Causality Condition, Jian-X. Zheng; MEFiSTo-3D Pro ­ A Multipurpose Electromagnetic Field Simulation Tool with Powerful Global Modeling Features, Wolfgang J.R. Hoefer, Poman P.M. So; EMPIRE ­ 3D EM Field Solver ­ New Speed-up Techniques for FDTD Algorithm, Andreas Wien, Andreas Lauer; Coplanar Circuit Design with COPLAN for ADS, Anreas Bettray, Rudiger Follmann; Efficient Modeling of Helix Antennas Using Micro-stripes, David Johns, R. Aitmehdi; emPiCASSO™: An Advanced Design Tool for Multilayer Printed Microwave Circuits and Antennas, K.F. Sabet


1:00­2:20 pm

TOPAS ­ A Non-linear FET Model and the Extraction Software, Rudiger Follmann; High Power LDMOS Performance Prediction Using a Nonlinear Model, Pascal Gola, Jean-Christophe Nanan; Developing Neural Models for Linear-Nonlinear Microwave Design, Q.J. Zhang; CONCERTO ­ 3D Microwave and RF Design Software, Cris Emson, Jonathan Oakley, David Carpenter


2:20­4:20 pm

Active Load Pull System for the Characterization of Power Devices, Andrea Ferrero, Gary Simpson, Surinder Bali; Automated Tuner System (ATS) for Fundamental and Independent Harmonic Load Pull Measurements for Device Modeling, Gary Simpson, Surinder Bali; Techniques for Accurate Measurement of Error Vector Magnitude, Kurt Matis; DSP Techniques Perform Accurate Analyses of Hardware Distortion, Joel Kirshman; Mode Stirrer Method Measurement of Shield Effectiveness for Microwave Coaxial Cable, Wayne Love; Measurement of the Dielectric Constant of a Glass Bead, Bruce Bullard


Thursday, May 24, 2001

9:00­9:40 am

Enhanced Thermal Performance Cu/W Flanges for Next Generation Power Packaging, Brian Simmons, Juan L. Sepulveds; Low Loss Green Tape™ for Wireless, Microwave and Fiber Optic Applications, D.I. Amey, S.J. Horowitz, R.R. Draudt, P.C. Donohue, M.A. Smith


9:40­11:40 am

Fast Response Detector for Wideband Input Noise, Yoav Koral; Phase Invariant Attenuators, George Apsley; Power Splitter with Excellent Amplitude and Phase Accuracy over a Wide Temperature Range, D. Kother, G. Pautz, G. Mollenbeck, P. Uhlig, U. Gollor, W. Poppelreuter; Modularity and Miniaturization ­ The New MMBX Connector, Jack Nee; The Design of Three Ports OMT Network with Dual Polarization Receiving, M.H. Chen, R.C. Hsieh; Roll-Rings: A High Performance Alternative to Slip Rings, Peter E. Jacobson


BALLOONS 1:00­2:00 pm

High Linearity Direct Launch RF Quadrature Modulator in SOS CMOS, Dan Nobbe;Latching RF MEMs Microrelay Based on 5 V Thermal Actuation, Vivek Agrawal; A Novel MMIC High Frequency Oscillator, J.T. Harvey, A.C. Young

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