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Industry News

RF and Hyper 2001 Technical Program

The technical program of RF & HYPER 2001, which will take place January 16-18, 2001 in Paris, France, as well as a list of exhibitors

December 1, 2000
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CNIT Paris la Défence from 16­18 January 2001


A conference dedicated to emerging technologies for the communications market

For the first time, two of the world's leading technology magazines, Telecommunications® and Microwave Journal, join together during RF & Hyper Europe 2001 to present a comprehensive industry conference covering three vital communication techniques: RF & Microwave Technology, Wireless Applications and Optical Technologies. The conference sessions are designed to provide engineers charged with implementing such technologies in communications applications with the most up-to-date industry information and analysis.

The conference tracks will cover:

RF & Microwave Technology as it applies to telecommunications, commercial applications and military applications. The track will focus on devices, subsystems and systems from the perspective of the design engineer.

Wireless Applications for communications techniques from antenna assemblies, base station architecture, microwave links and wireless broadband access up to 3G.

Optical Technologies covering components such as transmission, switching, IC componentry, wide area network and long haul applications and IP requirements.

Tuesday

Time 

Room 1

Room 2

7:00­12:20

Registration

 

13:30

Opening Plenary
Overview of Driving Technologies, Market Directions and Opportunities in Microwave, Wireless and Optical Technologies for the Communications Industry

15:00­15:45

Microwave 1

Wireless 1

 

The System Technologies

Analysis of Signal Processing

 

Requirements for

Techniques

 

Microwave Systems

 

1545­16:15

Coffee Break

Coffee Break

16:15­17:05

Microwave 2

Optical 1

 

High Power IC-like

All Optical Networks ­

 

Design Methods

Defining and Partitioning

 

 

the Hardware and Software

 

 

Elements

17:10­18:00

Wireless 2

Microwave 3

 

The System Technologies

Micro/Millimeter-wave

 

and Requirements from

Transceivers for Mass

 

GSM to 3G Migration

Production

18:00

Close of Conference Tuesday

 

Wednesday

Time 

Room 1

Room 2

7:00­8:30

Registration

 

8:30­9:20

Wireless 3

Optical 2

 

SAW Devices Supporting

State-of-the-art in Optical

 

GPRS/UMTS and

Devices

 

Improvement of

 

 

Linearity of TWT

 

9:30­10:20

Wireless 4

Microwave 4

 

MMIC-based Amplifiers for

Microwave and Photonic

 

Satellites Communications

Applications of MEMs

 

and Integrated High Power

 

 

Silicon MMIC

 

10:30­11:20

Optical 3
Advances in Optical RF Front-end Architectures
Switching and Cross
Connects

Microwave 5

11:30­12:20

Wireless 5

Microwave 6

 

NZIF Architecture for

Silicon/Germanium BiCMOS

 

GSM and Future Standard

Processes and Circuit

 

and EDGE Radio

Techniques for RFICs

 

Performance

 

12:20­15:00

Lunch and Exhibition Floor Visit

15:00­15:45

Optical 4

Wireless 6

 

Optical Signal Processing

Bluetooth and How to Go

 

and Transmission

to the Bluetooth

 

 

Qualification

15:45­16:15

Coffee Break

Coffee Break

16:15­17:05

Microwave 7

Wireless 7

 

High Frequency

Frequency Allocations

 

Packaging Techniques

and Implications

17:10­18:00

Microwave 8

Optical 5

 

Emerging Technology

Theory and Techniques

 

for High Power (> 100 W)

for Optical Networks

 

Amplifiers

 

18:00

Close of Conference Wednesday

Thursday

Time 

Room 1

Room 2

7:00­8:30 

Registration

 

8:30­9:20

Optical 6

Wireless 8

 

Optical Network

Wireless LANs and System

 

Monitoring, Restoration

Level Simulation for

 

and Management

Wireless Telephony

9:30­10:20

Microwave 9

Wireless 9

 

Test and Measurement

Monitoring and Testing

 

for Microwave Systems

of Wireless Networks

10:30­13:30

Closing Plenary Round Table
What the Future Holds in Microwave, Wireless and Optical Technologies for Communciations Applications

13:30

Close of Conference

Preliminary Technical Program

Opening Plenary
Tuesday, 16 January, 13:30­15:00
Overview of Driving Technologies, Market Directions and Opportunities in Microwave, Wireless and Optical Technologies for the Communications Industry
Dr. Kai-Yeung (Sunny) Siu, Chief Scientist, Raza Foundries, Inc. (US)

The Rebuilding of the Global Telecommunication Infrastructure

The explosive growth of Internet traffic in recent years has sparked the rapid development of broadband communications infrastructure. At the same time, deregulation of the telecommunication industry worldwide has created fierce competition among new and existing carriers that have been constantly looking for new ways to cut costs and create more revenue. This in turn has created a huge demand for new communication technologies and network equipment that provide tremendous bandwidth at low cost and enable new applications and services. This presentation discusses emerging broadband technologies and architectures, including optical networks based on DWDM, broadband wireless technologies, and terabit switching fabric with QoS guarantee.

Closing Plenary
Thursday, 18 January, 10:30­13:30
What the Future Holds in Microwave, Wireless and Optical Technologies for Communications Applications
Jim Crescenzi,
Principal Scientist, UltraRF (US)

Progress in microwave technology in support of wireless infrastructure has far surpassed the predictions of most observers, and there is no end in sight! New technology has been developed on a demand-pull basis, which is in great contrast to the defense era of the 1980s. The greatest progress has been made in handset technology, where transceiver functions have become more efficient, wider bandwidth, lower cost and more integrated. The battle for dominance in material technology between Si, SiGe and III-V compounds (GaAs, pHEMTs, etc.) will continue unabated, although it appears that SiGe has the momentum in its favor.

This presentation discusses base station issues and progress in component technology and cost structures and their applications.

Professor Ke Wu, Ecole Polytechnic Montreal

Bertrand Clesca,
Product Manager, Optical Networking,
Alcatel Optics Group (France)

Benefits and Challenges of the Optical Networking Layer

This presentation offers an overview of the current status of wavelength division multiplexing (WDM) transmission systems and discusses short-term evolution: an introduction of optical protection and the increase in the transport capacity. Benefits to move to wavelength routing, classification of cross-connects for the optical layer, technical challenges related to optical switching technologies and supervision and management of optical cross-connects are presented.

Microwave 1
Tuesday, 16 January, 15:00­15:45
The System Technologies and Requirements for Microwave Systems
J.P. Bardon & F. Vignaud, Temex

Microwave 2
Tuesday, 16 January, 16:15­17:05
Efficiency and Linearity Enhancement Methods for Portable RF/MW Power Amplifiers
John Sevic (US)

Microwave 3
Tuesday, 16 January, 17:10­18:00
Micro/Millimeter-wave Transceivers for Mass Production
David Miller, Director of Engineering, EESA (US)
Optimization of the Production Processes Aimed at a More Profitable Business in the Microwave Module Manufacturing

This session describes the techniques adopted in EESA Inc., which allows the mass production of microwave transceivers at very competitive prices with good gross profit figures. The session describes the involvement of engineering not just in the product development but also in the design of the manufacturing processes to assemble and test the units. A description of the manufacturing software tools developed by engineering and used in production to make the tuning and testing of the modules automatic is discussed. The impact of this approach on designing more complex modules, the efficiency of the manufacturing processes and the finances of the company is also reported. Finally, a couple of examples of units designed and presently tested with these techniques is reported with the relevant production flow and time chart, manufacturing cost and gross profit percentage.

Marc Rocchi, CTO, OMMIC

Millimetrewave and High Speed Optical Interfacint Circuits ­ Which Technologies for the Future? PHEMT, MHEMT or InP?

Microwave 4
Wednesday, 17 January, 9:30­10:20
Microwave and Photonic Applications of MEMs
Dr. Hector De Los Santos, Principal Scientist, Microcosm Technologies (US)
Micromachined and Microelectromechanical Systems (MEMS) Devices for Microwave/Wireless Communication Systems

An overview of micromachined and microelectromechanical systems (MEMS) devices for use in microwave/wireless communication systems is presented. A typical wireless communications system front-end block diagram is highlighted identifying the components targeted for replacement by micromachined or MEMS devices. These devices are described focusing on the unique methods required for successful design, and the miniaturization, cost reduction, increased performance and novel architectures enabled by these devices. Among the specific devices described are micromachined transmission lines, high Q inductors, cavity resonators, thin film bulk acoustic resonators (FBAR) and microelectromechanical varactors, low loss switches and high Q micro-mechanical vibrating resonators.

Microwave 5
Wednesday, 17 January, 10:30­11:20
RF Front-end Architectures
Thomas Müller, Dipl.-Ing., DaimlerChrysler Research, Ulm (Germany)

The fundamental receiver architectures and structures are presented, including the direct conversion and superheterodyne receivers, an up-down mixing concept, the IF and direct sampling receivers. Each of these receiver architectures will be discussed regarding their suitability for high dynamics, phase-truth, analog or digital modulation schemes and the design of multimode/multistandard receiver architectures. The fundamentals of the main error sources such as the influence of phase noise, filtering, group delay variations in the reception path and nonlinearities will be briefly explained. Since nearly every modern receiver uses analog-to-digital conversion somewhere in the reception path, the influence of faulty time and amplitude discretisation will be presented. Some important types of analog-to-digital converters and their abilities to sample baseband signals or IF signals will be presented.

For RF- and IF-sampling receivers, digital signal processing influences the design of the RF hardware. Cost effective digital parts will lead to specific structures in the RF part. These structures, as well as actual possibilities in the digital signal processing, are presented and discussed. The presentation closes with realized examples of digital receivers for different standards.

Dr. Heinrich Daembkes, President and CEO,
United Monolithic Semiconductors
(UMS) (France)

Broadband Wireless Communication Systems: Influence of Architectures and Packaging Concepts of mm-wave Front-ends on Time-to-Market and Cost

Broadband wireless radio links are today's best choice for connecting the users to very broadband backbones as a result of cost and time to use advantages. Emerging new systems such as LMDS, MVDS and VSAT will find their way to a volume market only if the cost for the customer premises entity (CPE) is sufficiently low. The RF-front-end today represents a major portion of the cost. By the use of higher integration concepts (MFCs), zero tuning architectures and low cost surface mount packaging technologies the cost of RF-front-ends will be reduced by a factor of more than two versus today's status. An example will be given using the UMS family of packaged LMDS MMICs.

Microwave 6
Wednesday, 17 January, 11:30­12:20
Silicon/Germanium BiCMOS Processes and Circuit Techniques for RFICs
Vida Ilderem, Motorola (US)

A Low Cost 90 GHz SiGe:C BiCMOS Technology for RF/IF Applications

Silicon germanium (SiGe) technology is fast becoming the technology of choice for various wireless applications. SiGe offers the opportunity for integrating a high performance HBT with CMOS analog and digital functions on a single chip along with all the necessary passives for RF/IF applications.

This presentation reports on a 0.35 um SiGe: C BiCMOS designed for RF/IF applications. This technology supports a suite of passives including seven resistors, 1.6 fF/um2 MIM cap, 4 fF/um2 double poly capacitor, varactors and electroplated copper inductors. The advantages of carbon for the SiGe HBT will be reviewed. A peak fT /fmax of 48/90 GHz is obtained for this typical HBT device. This technology provides excellent high performance at low bias current for low power applications. A 40 GHz fmax at 20µA is obtained on the optimized minimum device. The high base doping, combined with the low collector-base capacitance, gives the high fmax /fT ratio.

Microwave 7
Wednesday, 17 January, 16:15­17:05
Millimeter-wave Packaging
David Lynch, Design Engineer, Farran Technology

Millimetre-wave MMIC Multi-chip Module Design

The issues that face the designer of MMIC multi-chip modules in the 18 to 100 GHz frequency range will be discussed. Modeling and simulation will be considered in detail, including modeling of the external interface and individuial mm-wave module components and modeling and simulation of the module as a stand-alone unit. Other areas that will be discussed are design for test and design for manufacture. A design study of a Ka-band up- and down-converter unit based on MMICs will be used as an illustration.

Alain Michel, Application Engineer, Ansoft

Modeling the Parasitic Effects of Low Cost Packages on High Frequency Integrated Circuits with Ansoft EM Tools

Many high frequency circuit designers base their simulations on 50 ‡ terminations. The parasitics associated with low cost packages can make this simplification yield undesirable results. Ansoft's products offer many ways of analyzing package effects on circuit performance, providing designers an opportunity to compensate for electromagnetic effects. This presentation describes the old measure and fit method for package characterization and a new, more powerful design methodology for synthesizing circuits, rapidly simulating them, and fully verifying them accounting for all of the parasitic effects to prevent having to redesign. A differential VCO circuit is designed and simulated using this new methodology. By combining a rigorous verification procedure that accounts for all of the high frequency parasitic effects, along with tools that accelerate the initial design process, high frequency circuit engineers can successfully minimize their designs more quickly and easily than ever before.

Microwave 8
Wednesday, 17 January, 17:10­18:00
Emerging Technology for High Power (>100W) Amplifiers
Dr. Fred Myers, Manager,
RF and Foundry Div., Caswell Technology, Marconi Caswell (UK)

High power, high efficiency solid state amplifiers are essential for the operation of many systems. The existing devices (MESFETs, HEMTs and HBTs) have many parameters that differ but are all essentially limited to around 10W of power at 10GHz. It has been known for some time that wide band-gap semiconductors will allow a quantum leap in power capability. Compounds based on gallium nitride (GaN) and silicon carbide (SiC) offer at least an order of magnitude improvement.

Caswell Technology, UK, has been working for several years on wide band-gap semiconductors. This work is supported by a number of agencies (Company, UK MoD, European Union and BNSC) and is addressing the range of activities necessary to develop devices. In conjunction with various European partners, development efforts are underway in material growth, theoretical modeling, process technology, circuit design and packaging.

The material base chosen for this work is GaN. This material and its heterostructures is less mature then SiC but offers theoretically better performance. There is also a large effort worldwide to mature the material base driven by the optical requirements for short wavelength lasers. It is expected that the microwave applications will feed off this activity. This presentation offers an overview of the work at Caswell in these areas and compares these accomplishments with world results.

Microwave 9
Thursday, 18 January, 9:30­10:20
Test and Measurement for Microwave Systems
Jin Bains, Agilent

An Improved Network Analyzer for Measuring High Dynamic Range (> 100 dB) Devices with Speed and Accuracy

The dynamic range of the network and analyzer is a critical parameter in a large variety of device measurement situations. The various definitions of dynamic range are explained here. This paper provides a description of a network analyzer receiver block diagram that allows for maximum dynamic range. The use of mixers vs. samplers is considered. Ways to reduce noise floor are explained and compared in terms of their impact on dynamic range and their effect on measurement speed. Additionally, test set configurations that maximize dynamic range are described.

John McManus, IFR

To be announced.

Wireless 1
Tuesday, 16 January, 15:00­15:45
Analysis of Signal Processing Techniques
Jean-Yves Moliner, Texas Instruments

Analysis of signal processing techniques (Signal Processing Applications and technology for wireless handsets and infrastructures) is presented. A description of a wireless digital cellular handset general block diagram and 2G handsets baseband architecture is offered along with typical DSP algorithms in 2G handsets. 2G handset performance evolution and 2G-to-3G evolution: mobile voice to mobile multimedia processors evolution (performance, power consumption) is presented. Multimedia applications are described and the Open Multimedia Applications Platform (OMAP) is discussed. In addition, supporting process technologies, wireless infrastructure solutions and 2G-to-3G infrastructure evolution are presented, and the presentation concludes with DSP for wireless applications.

Wireless 2
Tuesday, 16 January, 17:10­18:00
The System Technologies and Requirements from GSM to 3G Migration
Jean Christophe (J.C.) Nanan, Motorola

3G Creates New Requirements for BST Power Amplifier

The third generation of mobile phone standards will introduce more complex modulation schemes to gain spectral efficiency and increase the data rate at the user interface. Some considerations about the W-CDMA signal's random nature and characterization (CCDF, code domain...) will be discussed. Definition of system specifications and measurements, and the need for linear BST power amplifiers to limit the distortion will also be presented.

A new LDMOS family is introduced to address this application. A nonlinear model is used to simulate the LDMOS devices under complex signal conditions. Validation and characterization, the influence of the Quiescent current on intermodulation/ACP, pulse measurements, CCDF measurements and signal clipping influence will be shown. Different W-CDMA line-ups: single carrier, dual carrier and multi-carrier will be presented.

Martin Hallerdt, Ericsson, France

The history of 3G standardization, new features of mobile communications in the third generation, UMTS system requirements, new system requirements in UMTS networks and UMTS migration scenarios for GSM network operators will be presented.

Wireless 3
Wednesday, 17 January, 8:30­9:20
SAW Devices Supporting GPRS/UMTS and Improvement of Linearity of TWT
Gerhard Fischerauer, Epcos
SAW Devices Supporting Advanced Handset Technologies

Topics covered in this presentation include progress in SAW component technology (miniaturization, enhanced functionalities, integration, packaging) and filters for advanced cellular phone systems (GPRS, CDMA, UMTS).

Francis Payen and Georges Faillon,
Thomson Tubes

Wireless 4
Wednesday, 17 January, 9:30­10:20
MMIC-based Amplifiers for Satellite Internet Services and Integrated High Power Silicon MMICs
Gordon Railton, Pascall Electronics

Topics covered in this presentation include expansion in broadband services for video, Internet and mobile communications; new transponders in the K and Ka bands; and direct-to-home provision demands for consumer-priced microwave network elements. MMIC-based amplifier technology with innovative multi-layer circuit techniques are required, geared to low cost volume production. Traditional discrete packaged GaAs FET approaches fail to meet the performance and cost demands at these higher frequencies. Transmission powers required are in the 1 to 10 W range. However, the MMICs available are limited to approximately 1 W for linear applications. Circuit power combining techniques are required. An example of an 18 GHz 4 W combined MMIC amplifier for point to point or Satellite uplinks is presented, along with a discussion of RF line-up, circuit techniques and thermal considerations. A brief example of an 18 GHz VSAT transceiver used for Internet services with L-Band IF input is described, and other frequencies and trends are discussed.

Gerard Bouisse, Principal Staff Engineer,
Motorola Semiconducteur, Toulouse

This paper presents the different technical aspects of fully integrated high power silicon MMICs for wireless base stations in the 0.9 to 2.2 GHz arena. Motorola's silicon MOSFET LDMOS technology, and more specifically its integrated version HVIC, is presented. The technical challenges linked to high power silicon multi-stage power amplifiers are emphasized and solutions to these new problems are proposed. The performance of two circuits, a three-stage 30 W 900 MHz power amplifier and a three-stage 10 W 1.8 GHz, using the proposed solutions, demonstrate the design concept.

Wireless 5
Wednesday, 17 January, 11:30­12:20
NZIF Architecture for GSM and Future Standard EDGE Radio Performance
Yvan Droinet, International Product Marketing Manager, GSM RF Products, Philips Semiconductors

NZIF: An Innovative Architecture for Highly Integrated Multi-mode RF ICs

This presentation covers wireless multimedia applications and RF technology roadmaps. The NZIF architecture is described and a NZIF transceiver implementation is discussed. An RF and PA product roadmap for wireless applications is offered to pave the way to 3G.

Heikki Heliste, Nokia

EDGE Radio Performance

8-PSK modulation, Incremental Redundancy, Link Adaptation, Radio Link and Network Performance (based on simulations).

Wireless 6
Wednesday, 17 January, 15:00­15:45
Bluetooth and How to Go to the Bluetooth Qualification
Stefan Lof, Ericsson Microelectronics

What parts are necessary in a complete Bluetooth implementation? A single or multichip approach and the process technology to achieve it. Cost and performance aspects of a radio module vs. a discrete solution.

Michel Binaud, Rohde and Schwarz

Bluetooth Qualifications and Specifications

Qualification I, II and IV are described and Specification Status IV is covered.

Wireless 7
Wednesday, 17 January, 16:15­17:05
Frequency Allocations and Implications
To be announced.

Wireless 8
Thursday, 18, January, 8:30­9:20
Wireless LANs and System Level Simulation for Wireless Telephony
Wynne Davies, Cordless Consultants

Users have waited a long time for a decent wireless LAN. Although wireless LANs have been around for ten years, they have all, in the past and without exception, been high cost and low performance. However, all that changed in November 1999 when the IEEE in the US ratified a new high rate standard for wireless LANs. The industry is already planning the next generation of higher speed wireless LANs. In one case alone: HIPERLAN, a high performance radio LAN that offers more than 20 Mbps, the standard was formally completed, approved and ratified in 1997. Furthermore there are other developments afoot offering the potential to deliver 50 Mbps and above. This paper will chart the developemnt of wireless LANs, from the early days of high cost and low performance products through to today's high performance and low cost solutions. Developments within the Euroepan Telecommunications Standards Institute in relation to HIPERLAN 1 and HIPERLAN 2 will be considered, as well as the work of the IEEE with regard to the 802.11 suite of wireless LAN standards.

Heiki Rekonen,
Customer Service Director, Aplac

Using Circuit-level Simulation of RF Components in Combination with System Level Simulation in APLAC

The unique features of the APLAC RF Circuit Simulator's programming language interface are exploited. An amplifier is analyzed on a circuit level, and a model of it is constructed and used in a system level simulation. This work is from the world of wireless telephony but the principles can be applied to any circumstances.

Wireless 9

Thursday, 18 January, 9:30­10:20

Monitoring and Testing of Wireless Networks

Guenther Klenner,
Strategic Marketing Manager,
Dave Adams, Product Specialist Air Interface Test Systems, Acterna Wireless Network Division (Germany)

The transition from test and measurement to test and management. Test instruments are described that are good for network deployment and maintenance on-site. Fixed test systems that can audit a wireless network like a subscriber are discussed, and scalable test systems with fixed, mobile and automous probes for the future are described.

Benoit Deschamps, ANF

Optical 1
Tuesday, 16 January, 16:15­17:05
All Optical Networks ­ Defining and Partitioning the Hardwareand Software Elements
Paul Liesenberg, Director Strategic Marketing, ZettaCom (US)
Optical Silicon

Some believe that the more optical networking advances, the more electronic switching fabrics and protocol processors are required. This presentation analyzes the requirements that the exploding Internet and optical layers put on the "intermediary" electronic components. How price-performance, market need and market acceptance come together, and why silicon is required to offer services with acceptable, deterministic QoS levels over an all-optical transport infrastructure.

Doug Arent, Director of Stretegic Marketing, Network Photonics (US)

Gigabit Level Services for the Metro Using Wavelength-routed All Optical Networks

This presentation discusses the opportunity for competitive data-oriented carriers to offer flexible gigabit level services built around third generation metro DWDM networks. This session shows the evolution of DWDM transport from "dumb" point-to-point systems to "intelligent" wavelength-routed systems offering high bandwidth, service flexibility, dynamic provisioning and reconfiguration. Solutions to the all-optical engineering challenges commonly posed are highlighted.

Optical 2
Wednesday, 17 January, 8:30­9:20
State-of-the-Art in Optical Devices
Gary Bjorklund, CTO,
Nanovation Technologies (US)

Smaller, more reliable and lower cost optical components are necessary for dense wavelength division multiplexed (DWDM) optical fiber communication to be fully deployed on the metro scale. Integrated optics technology is emerging as a strong contender for supplying such improved optical components. Using the silica-on-silicon materials system, integrated optical circuits that combine taps, splitters, wavelength mux/demuxers and switches can be fabricated on a single chip. Switches based on hybrid MEMS/silica technology have considerable promise in terms of latching capability, power consumption, high contrast and wide optical bandwidth. Although switching speeds are limited to the millisecond time scale, exciting components such as single chip optical add/drop multiplexers can be envisioned. Using the InP materials system, sub-nanosecond switching speeds can be achieved and active optical devices such as lasers, amplifiers and photodetectors can be included. Challenges for the practical implementation of silica-on-silicon and InP-based integrated optical components are discussed.

Dr. Adrian Janssen, Chief Technologist, Nortel Networks HPOC (UK)

In the last few years optical networks have been developing in response to ever-growing demands in transmission density. This is likely to continue in the foreseeable future with the accompanying evolution of optical devices to provide appropriate functionality. The ability to achieve a high degree of network flexibility, and sufficient optical precision to enable very high data transmission into the terabit regime is dependent on the evolution of a number of new technologies. Optical device solutions, which allow data to be routed by wavelength control or by optical switching, are now keenly sought. This presentation will give some perspective into the role of these technologies and point towards possibilities for future devices.

A number of strategies are being adopted to reduce costs of manufacture as the network expands closer to the end user. The advances in precision manufacturing using automation and the possibilities for integration and hybridization will be discussed.

Optical 3
Wednesday, 17 January, 10:30­11:20
Advances in Optical Switching and Cross Connects
Dr. Vivek Tandon, Business Development Director, Kymata (UK)

As the demand for bandwidth, fueled by the Internet, continues unabated, so the numbers of DWDM optical networking companies supposedly offering unique solutions to contend with this growth continue to expand. One of the main challenges for these companies is where and how to obtain the opto-electronic components in quantities necessary to build their DWDM systems.

The manufacturing of discrete components for the DWDM industry has been reasonably successful to date. However, the requirement for higher specifications (such as increased number of wavelengths and lower insertion losses), larger volumes of these building blocks and increased integration of functionality, dictate the need for new volume manufacturing techniques to be employed.

This presentation focuses on the use of planar manufacturing techniques to develop devices such as array waveguide grating, variable optical attenuators and thermo-optic switches. It will compare the advantages of AWG's with that of traditional thin film filters and fiber Bragg gratings. In addition, the different planar manufacturing techniques including flame hydrolysis deposition and plasma-enhanced chemical vapor deposition, and their relative advantages and disadvantages, are examined. The use of silica-on-silicon versus silicon-on-silicon is also discussed. Finally, the presentation explores the ability of developing a host of other vital DWDM components including variable optical attenuators and thermo-optic switches.

Dr. Narda Ben-Horin, Business Development Manager, Lynx Photonics (Israel)

Smart Photonic Switching for Intelligent Optical Network

Optical communications technology is the only solution for next generation unlimited bandwidth Internet-oriented carrier networks. However, where most long-haul communications transport is today conducted optically, most of the switching-routing is electronic, thus requiring optical-to-electrical switching and then electrical-to-optical signal conversion each time it has to be routed. This has become a major bottleneck in unleashing the full potential of DWDM enabled optical networks.

Multiple technologies are being adopted to develop optical switches, which will be capable of switching the optical signal without OEO conversion. Probably the most reliable method is based on integrated optics that is already widely deployed for other types of optical devices.

With the maturity of integrated optics technology, smart photonic switch modules are now being developed which take integrated optics to the next generation. These devices introduce novel features in multiple levels of the switch module and enable unique functionality's that are mandatory for cost-effective, efficient optical networks. Manufacturing of these devices is straightforward using established semi-conductor methodology and world-class contract manufacturers with large volume capacities.

Optical 4
Wednesday, 17 January, 15:00­15:45
Optical Signal Processing and Transmission
Steven Borley, Senior Photonics Engineer, Marconi Caswell (UK)
Tuneable Laser ­ a Key Enabling Technology for Advanced Optical Networks

This presentation offers a state-of-the-art review examining current and future tuneable laser devices, and characterization and control issues associated with the semiconductor tuneable laser are discussed. How the availability of widely tuneable lasers affect the way in which networks are designed is examined, and the likely deployment of widely tuneable lasers within access, LAN and trunk networks is evaluated.

Jung-Chih (J.C.) Chaio, Product Line Manager, Chorum Technologies (US)

Optical Signal Processors

To increase the network management and control flexibility in the next generation WDM optical networks, optical signal processors are essential to dynamically condition and regulate the WDM signals passing through cross connects or add/drop multiplexers. In the long haul, metro or access networks, optical signal processors, including optical switches, attenuators, power equalizers and dispersion compensators, are used to manage the photons in order to match the system requirements. In this presentation, several different technologies and devices for optical signal processing will be discussed.

Optical 5
Wednesday, 17 January, 17:10-­8:00
Theory and Techniques for Optical Networks
Dr. Jerry Bautista, Vice President Technology and CTO, Wavesplitter Technologies (US)

A review of current state-of-the-art optical devices based on planar lightwave circuits (PLC) and advanced fused fiber technology is offered. Planar lightwave circuits allow complex optical functions for high channel count DWDM systems to be integrated on a silicon platform. This platform allows for device flexibility without the typical increased manufacturing or development costs. Advanced fused fiber technology is critical for next generation optical amplifiers including Raman amplifiers, as well as dense interleaver products. Both of these applications are critical for enabling tomorrow's DWDM systems where higher bit rates and narrower channel spacing provide the required bandwidth. The range of devices that can be made from PLC and fused-fiber platform technologies include array wave-guides, switches and optical add/drop multiplexers, dispersion compensators, high power pump combiners and channel interleavers.

Henry Yaffe, CTO, Yafo Networks (US)

Transmission Limitations Due to Optical Fiber Degradations

These degradations may be better understood and therefore managed if we examine the nature of these degradations and their corresponding effects. This presentation examines two major sources of optical degradations: polarization mode dispersion and chromatic dispersion. These effects and methods to manage them in order to achieve high speed, high quality transmission are discussed.

Optical 6
Thursday, 18 January, 8:30­9:20
Optical Network Monitoring, Restoration and Management
Ian Clark, Senior Systems Engineer,
CIENA Europe (UK)

This presentation covers transparent transmission of ATM, IP and fractional gigabit Ethernet, and transmission distances from urban rings (metro) to long haul (2500 km+). Optical platforms for tomorrow's data rates (40 Gbits) are described, and optical services delivered from CIENA's Optical Services Platform CoreDirector are presented. Product families to fit all needs, managed under a services umbrella are discussed, along with optical dialtone, bandwidth on demand from automated IP routers, as well as network management from Web browser technologies.

Jean-Francois Rousselet, Daussault DA

Exhibitor List

AB Millimetre

D52

Absys

E21

ACC I&M

F37

Acofab

B12

Adcon Telemetry Ag

E12

Adeunis RF

F27

Aeroflex Europtest

B26

Afcem

A3

Agilent Technologies

D24

Altech

E30

Altoflex-Insttrument Specialties

A8

Aml Microtechnique Lorraine

E48

Amphenol Coax Europe

C45

Anritsu SA

E22

Ansoft

B32

Antennessa

Espace Meito/G2rm

Aplac Solutions Corp.

F42

Ara

A39

Ascome

F12

Atem

A20

Atmh

 

Axon Cable SA

G23

Becler

C1

Bfi Optilas

D44

C-Mac Microtechnology

E34

Cables Et Connectiques

D1

Celti

E42

Chauvin Arnoux

E17

Cie-Elsevier Thomas

G24

Cire

B4

Comat

D36

Communications & Power Industries
Europe Ltd.

F31

Compagnie Deutsch

B41

Compelma

B35

Covimag

 

Creative Eurecom

Espace Meito/G2rm

Credowan

D32

Crephi

 

CST Gmbh

E18

Cue Dee Technica

A48

Dedienne

B6

Delta Ohm

E14

Diconex

B14

Electronique International Hebdo

B47

Electroniques Products
and Services

Kiosque

Elexience

D23­D27

Elhyte

F23­F24

E2m

B51

Em Tests

A14

Emerson Et Cuming ­
Microwave Products Sarl

F28

Emitech

E27

EMV

D33

Equipements Scientifiques

B8

Ericsson Microelectronics

E13

Eseo

Espace Meito/G2rm

Ester Limoges Technopole

 

ETS Serge Normand

E28

Estar

Espace Meito/G2rm

ETX International

E41

Euro Mc

A22

Europeenne De Telecommunications ­ Etsa

A7

Europulse

 

Frank & Schulte France

E38

Geb

 

Getelec

B28

Gore & Assoc.

B44

Hameg

B30

HTS Electronique & Cem

B24

Huber + Suhner France

D11

Hycosys

A5

Hyper Industrie

C16

Hyper Technologies

D30

Hypertech

A38

Hyptra

F34

Hytem

A32

I 2 E

B52

IFR International

C18

IMS Connector Systems

A33

In-Snec

E31

Informate

E32

Ircom

 

Ireste

Espace Meito/G2rm

ISC France

F40

Intercept Tregor

Espace Meito/G2rm

ITT Industries Cannon

A40

Jacques Dubois

B18

Karl Suss France Sarl

F18

Kathrein France

E33

Kyocera Fineceramics

D28

Lecroy

C2

Lithos

Espace Meito/G2rm

Livingston

C44

Lpkf France Sarl

B37

Lsi (Le Savoir Industriel)

E29

Lv2i Technodif

B7

M2s

B2

Map

A4

Marconi Applied Technologies

D7

Mat Equipement

F33

Matech Electronique

A24

Mb Electronique

C41

Meito

Espace Meito/G2rm

Metclad

E36

Meusonic

C6

Micro-Coax

C37

Microlease France

F14

Microwave Engineering Europe

D3

Microwave Journal

A1

Millimondes

E24

Milmega

A28

Mitel Semiconductor

A34

Murata Electronique

B36

Ngk Spark Plugs France

C40

Novella Satcoms

G27

Nucletudes

A10

Ommic

A36

P2m

F22

Phiteq Europe

C43

Phiteq Telecoms

D14

Prana R&D

 

Pyrecap

B22

Quasar Microwave Technology Ltd.

A27

Racal Systems Electronique

D18

Radialex Wurth Elektronik

B3

Radiall

A12

Radiometrix Ltd.

G19

Reinhardt Microtech Ag

C35

RFPA

A26

Richardson Electronique S.N.C

D10­D12

Rogers SA

B40

Rohde & Schwarz France

D40

Rosenberger

B10

Salies

D21

Satimo

C52

Schaffner

B5

Schlegel Bvba

B39

Schlegel Systems

A2

Selecom

B48

Sidt Europe

E44

Siemens S.A.S/Epcos

F38

Siepel-Hyfral

C49

Sinfor

F17

Sivers

D34

Sodhy

B31

Spectrum Control

C4

Spinner France Sarl

E43

St2e Temex

Espace Meito/G2rm

Tech-Inter

C36

Technicome

B13

Tekcem

Espace Meito/G2rm

Telogy International

C10

Temex Components

A18

Thomson CSF Communication

G47

Thomson CSF Microelectronique

F48

Thomson Tubes Electronique

F44

Vitelec Electronics

D22

Vsatech

B33

 

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