Integra Technologies announced the formal launch of a new line of standardized GaN on SiC RF power modules, with more than a dozen in the family.
Differentiating these integrated standard modules from custom or build-to-print PCB amplifier assemblies, or “pallets,” these new, ultra-efficient RF power modules are developed to offer a new level of integration, resulting in powerful, yet simple, higher-level building blocks — optimized for size, weight, power and cost (SWaP-C) — for creating high power amplifiers for pulsed and CW radar systems.
Built-in functions can include RF matching, GPS, output noise suppression, temperature compensation and VSWR protection. Integra’s RF power modules are available in a variety of RF bands, and future standard and semi-custom solutions will be built around Integra’s commitment to push advanced GaN on SiC, 50 Ω RF power transistor technology to X-Band.
Standard RF power modules currently offer output power to 2400 W and efficiencies to 70 percent. Unique footprints and packaging approaches are available.
Review the selection and performance of all of Integra’s power modules on their website.