Integra Technologies has announced a new, fully-matched, GaN on SiC RF power transistor developed for C-Band applications. The device is rated for continuous wave (CW) operation.
The IGT5259CW25 is matched to 50 Ω and operates across the 5.2 to 5.9 GHz band, providing a minimum of 25 W CW output power with 48 percent efficiency. Gain is 12 dB.
The transistor is biased with 36 V on the drain, with a negative gate voltage and bias sequencing required.
The IGT5259CW25 is assembled in a metal-base package, for good thermal transfer, with a ceramic-epoxy lid.