Integra Technologies has released a fully-matched, GaN on SiC transistor that delivers 50 W from 5 to 6 GHz.
Designed for pulsed C-Band radar, the IGT5259L50 GaN on SiC HEMT is fully matched to 50 Ω and has instantaneous frequency coverage from 5.2 to 5.9 GHz. With a 1 ms, 15 percent duty-cycle pulse, the device supplies 50 W of peak output power at 43 percent efficiency and 14 dB gain, biased at 50 V on the drain.
The IGT5259L50 is housed in a RoHS-compatible metal-ceramic flange-mount package with gold metallization, measuring 0.800 in. (20.3 mm) wide and 0.400 in. (10.2 mm) long. The package provides excellent thermal dissipation. Internal assembly is done with a chip and wire approach by certified assemblers.
Each transistor is RF tested at high power in a 50 Ω RF test fixture and meets all specifications of MIL-STD-750D.
This 50 W transistor is an ideal solution for C-Band pulsed radar system designs that require immediate full power and high gain.