advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
Industry News

Amplifiers

May 1, 2000
/ Print / Reprints /
| Share More
/ Text Size+

Amplifiers

Broadband Test Amplifier
The model 150W1000 broadband test amplifier offers 150 W minimum power and frequency response from 80 to 1000 MHz. The unit provides the extra margin of power needed when testing to International Electrotechnical Commission 10 V/m requirements at 3 m from 80 to 90 MHz. The amplifier is also suitable for use in automotive bulk current injection applications. The unit is equipped with a digital control panel that provides local and remote control. A four-line digital display, menu-assigned softkeys, rotary knob and four dedicated switches offer extensive control and status reporting capability. Operational presentation of forward and reflected power, control status and reports of internal amplifier status are also provided. Special features include gain control, internal/external automatic level control (ALC) with front-panel or remote control of the ALC threshold, pulse input capability and RF output level protection. The amplifier limits reflected power to 100 W. All amplifier control functions and status indications are available remotely in GPIB/IEEE-488 and RS-232 formats. Price: $27,000.
Amplifier Research, Souderton, PA (215) 723-8181.

RF Power Amplifier
The model GRF2064 RF power amplifier operates from 869 to 960 GHz with 100 W of linear power and 20 W CDMA. The unit is designed for linear applications in the cellular frequency range, utilizing linear power devices that provide good linearity, high gain and wide dynamic range. High efficiency operation is achieved by employing unique microstrip networks and advanced laterally diffused metal oxide semiconductor (LDMOS) devices. The unit is designed for high reliability with such features as built-in voltage-regulated bias supply and EMI/RF interference (RFI) filters. Each amplifier undergoes extensive burn-in prior to final test and quality assurance.
Ophir RF, Los Angeles, CA (310) 306-5556.

Dual-band 3 V LNA
The model RF2363 dual-band 3 V low noise amplifier (LNA) is designed for use as a front end for 950 MHz GSM and 1850 MHz DCS applications, featuring a good combination of low noise figure and high linearity at a low supply current. The 900 MHz LNA is a single-stage amplifier, while the 1900 MHz LNA is a two-stage amplifier. The part can also be tuned for applications in other frequency bands. Distinguished by a low noise and high intercept point, the amplifier operates with a gain of 18 dB at 900 and 1900 MHz. The device is produced using GaAs heterojunction bipolar transistor technology and the company’s Optimum Technology Matching.® Manufactured in a small industry-standard SOT-23 eight-lead package, the unit is available for immediate shipment. Price: 82¢ each (10,000).
RF Micro Devices, Greensboro, NC (336) 664-1233.

MMIC-based Amplifier
This high gain, broadband, MMIC-based amplifier is designed to meet the demanding requirements of commercial communications systems while providing the cost benefits of MMIC technology. The amplifier features a 21 ±0.5 dB small-signal gain over a 37 to 40 GHz operating frequency range. P1dB is +18 dBm and Psat is +21 dBm. The unit operates from +4.5 V DC at 310 mA. S11 and S22 are -12 and -10 dB, respectively.
Microwave Development Company Inc. (MDC), Salem, NH (603) 870-6280.

X-band Driver Amplifier
The model CHA5010b two-stage monolithic driver amplifier is manufactured with a standard MESFET process, via holes through the substrate, air bridges and electron beam gate lithography. The unit is available in chip form. Specifications for the amplifier include broadband performance of 9 to 10.5 GHz, output power of 27 dBm, gain of 15 dB, gain flatness of ±1.5 dB and a chip size measuring 2.09 x 1.27 x 0.10 mm.
United Monolithic Semiconductors SAS, Orsay, France +33 (0) 1 69 33 03 08.

PCS Band Low Noise Amplifier
The model QBH-8756 hybrid surface-mount packaged LNA operates in the PCS band from 1850 to 1910 MHz with a high dynamic range for wireless base stations or similar applications. The latest version has been improved to provide a gain of 22.5 ±0.5 dB, noise figure less than/equal to 1.0 dB, low input/output SWR and excellent OIP3 performance of +37 dBm.
REMEC Q-bit Inc., Palm Bay, FL (800) 226-1772.

Post a comment to this article

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement