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Device

4 W Plastic-packaged GaAs Power FET
The model AM144MX-TF plastic-packaged GaAs power FET has a total gate width of 14.4 mm and is designed for high power microwave applications up to 8 GHz. The plastic package is provided with straight leads in a drop-in mounting style. The bottom of the package serves simultaneously as DC ground, RF ground and thermal path. The unit features high gain and saturated power of 36.5 dBm at 2 GHz. Three heat sink paths are provided for effective heat removal.
AMCOM Communications Inc., Clarksburg, MD (301) 353-8400.

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