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Industry News

Amplifiers

April 1, 2000
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Amplifiers

High Isolation Distribution Amplifiers
The model FE-7923A low cost,10-channel sinewave distribution amplifier operates from 1 through 10 MHz. Designed to meet stringent satellite ground station requirements, the amplifier offers low phase and amplitude noise bursts with isolation greater than 100 dB. The unit operates from a 115 V AC line or +15 V DC power supply. SWR of the input does not exceed 1.5 (referenced to 50 W). Various mechanical configurations and connector types are available, including 19-inch rack-mounting.
FEI Communications Inc., a subsidiary of Frequency Electronics Inc., Mitchel Field, NY (516) 794-4500.

GaAs MMIC Low Noise Amplifier
The models HMC262, HMC263, HMC281 and HMC282 low noise amplifiers (LNA) are well suited for microwave and millimeter-wave point-to-point radios, LMDS, VSAT and other SATCOM applications. The HMC262 features gain of 25 dB from 15 to 24 GHz, a single bias supply of +3 V at 36 mA with noise figure of 2 dB. The HMC263 provides gain of 23 dB from 24 to 36 GHz, a single bias supply of +3 V at 46 mA with noise figure of 2.3 dB. The HMC281 offers gain of 22 dB from an output P1dB of +9 dBm and noise figure of 2.5 dB. The HMC282 provides gain of 26 dB from 36 to 40 GHz and an output P1dB of +9 dBm with noise figure of 3.5 dB. Operating temperature range is -55° to +85°C.
Hittite Microwave Corp., Chelmsford, MA (978) 250-3343.

40 W RF Power Amplifier
The model GRF2030DC high power, solid-state RF power amplifier utilizes linear power devices that provide good linearity, high gain and wide dynamic range. Designed for linear applications in the PCS frequency range, the amplifier also features a built-in, voltage-regulated bias supply and electromagnetic and RF interference filters. High efficiency operation is achieved by employing unique microstrip networks and advanced GaAs FET devices.
Ophir RF, Los Angeles, CA (310) 306-5556.

CDMA Amplifier
The model AMT-1930-016 class A/B amplifier is designed as a single carrier amplifier for use in base stations. The fully integrated amplifier features alarms and cooling while delivering 16 W of average power and 31 dB of gain. Size: 10.2" x 10.3" x 8.80".
American Microwave Technologies (AMT), Anaheim, CA (714) 456-0777.

Medium Power GaAs FET Amplifiers
The models PA2010/SMP2010 low cost, medium power GaAs FET amplifiers operate in the 200 to 2000 MHz frequency range while generating up to +25.5 dBm for 1 dB compression point. Third-order intercept is +33 dB and small-signal gain is 10 dB. Hermetic packaging is available in both TO-8 and surface mount. An SMA connector version is available as an option.
Stellex Microwave Systems Inc., Palo Alto, CA (800) 321-8075.

36 - 40 GHz High Power Amplifier
The model CHA5094 high gain, three-stage monolithic high power amplifier is designed for a range of applications, including military and commercial communication systems. Available in chip form, the circuit is manufactured with a pHEMT process, 0.15 mm gate-length via holes through the substrate, air bridges and electron beam gate lithography. The backside of the chip is both RF and DC grounds, thereby simplifying the assembly process. Output power is 28 dBm with 11 dB ±1 gain. DC power consumption is 1.3 A at 3.5 V. Chip size: 4.51 mm x 2.60 mm x 0.05 mm.
United Monolithic Semiconductors (UMS), Orsay, Cedex, France +33 (0) 1 69 33 03 35.

C-band and Ku-band Power Boosters
These C-band and Ku-band power boosters include control and protection functions and consist of three major subsystems: the RF amplifier, a power supply unit and a cooling system. The amplifier section contains all of the necessary DC power conditioning circuitry for bias and sequencing of the RF amplifier devices as well as over-temperature protection, RF power detection, mute control and gain drop detection. Gain flatness is ±1 dB (max) and SWR is 1.5 (max). Designed specifically for use in very small aperture terminal applications, the unit’s innovative mechanical design features high thermal dissipation efficiency with 12° to 15°C rising temperature, resulting in a higher MTBF number.
Wavesat Telecom Inc., Ville St-Laurent, Quebec, Canada (514) 956-6300.

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