Internal HBT Process Capability
This six-inch indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) process simplifies the formation of circuits by enabling circuit manufacturers to precisely etch emitter layers and provides a platform to develop more robust, high performance, reliable HBT circuits. InGaP HBT wafers exhibit higher current gain and greater temperature stability than traditional aluminum gallium arsenide HBTs. The wafers also provide good power efficiency and high linearity for power amplifiers and are most suitable for use in high data rate fiber-optic devices.
ANADIGICS Inc., Warren, NJ (908) 668-5000.
The RX6000 series amplifier-sequenced hybrid receivers are designed specifically for short-range wireless control and data applications that require robust operation, small size, low power consumption and low cost. The receiver can be readily configured to support a wide range of data rates and protocol requirements. A wide dynamic range log detector, combined with digital automatic gain control and a compound data slicer, provides robust performance in the presence of on-channel interference or noise. Price: $15.20 (1000).
RF Monolithics Inc. (RFM), Dallas, TX (972) 233-2903.