Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11–13, 2016 in Clearwater Beach, Fla.
Designed for up to 8 GHz operation, the new 28 V GaN HEMT die exhibits 12 dB typical small signal gain at 8 GHz, 17 dB typical small signal gain at 4 GHz, and 30 W typical PSAT. Additionally, due to the superior material properties of GaN compared to silicon (Si) and gallium arsenide (GaAs), the new 28 V, 30 W GaN HEMT die also deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than Si and GaAs transistors.
As such, the CGH80030D is ideal for use in a diverse range of applications, including: UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios, among others.
“The increasingly widespread adoption of GaN-on-SiC RF technology in applications including: military and aerospace systems, telecom base stations, wideband test equipment, civil radar, and medical applications is driving R&D efforts at Wolfspeed,” said Jim Milligan, RF and microwave director, Wolfspeed. “As such, the new 28 V, 30 W GaN HEMT die we launched at WAMICON enables enhanced innovation, performance, and efficiency across a broad spectrum of RF and microwave applications in both the commercial and military sectors.”
During the event, Wolfspeed also revealed that their GaN-on-SiC RF power transistors recently completed qualification testing to demonstrate compliance with NASA EEE-INST-002 Level 1 reliability standards for satellite communications and radar equipment.
“2016 marked our tenth annual exhibition at WAMICON, which is globally recognized as the premier annual event dedicated to pushing the limits of RF and microwave technology and developing new solutions for next-generation challenges. So, we were thrilled to both release an effective new microwave and RF product solution and to announce our new space capabilities to the hundreds of academics and other professionals in attendance,” said Ryan Baker, RF marketing manager at Wolfspeed, and co-chair of WAMICON’s Exhibits and Sponsorship subcommittee.
For more information about Wolfspeed’s new CGH80030D 28 V, 30 W GaN HEMT bare die, please visit http://www.wolfspeed.com/cgh80030d. To purchase the new CGH80030D, please visit Mouser. For more information about Wolfspeed’s GAN-on-SiC RF power transistors having completed testing to demonstrate compliance with NASA reliability standards for space and satellite systems, please visit http://www.wolfspeed.com/news/space-qual. For all other inquiries about Wolfspeed™ RF products and foundry services, please visit http://www.wolfspeed.com/rf or contact Ryan Baker, marketing manager and North American sales manager, Wolfspeed, at email@example.com or 919-407-5302.