RFMW Ltd. announces design and sales support for the Qorvo TGF3021-SM GaN transistor offering over 30 W of P3 dB output power. Functioning from 30 MHz to 4 GHz, the TGF3021-SM is a discrete GaN on SiC HEMT supporting multiple high power applications such as LMR radio, commercial and military radar, RF jammers and test instrumentation. Capable of both CW and pulsed performance, typical PAE is 72.7%.
The Qorvo TGF3021-SM operates from a 32 volt supply and is offered in a 3 x 4 mm plastic QFN package. Mid-band linear gain, when tuned for power, is >19 dB.
