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100 W GaAs MESFET
The type NES1823P-100 GaAs MESFET consists of two pairs of GaAs MESFET chips that can be combined externally in either a push-pull or balanced configuration. The unit is designed for 2.1 to 2.2 GHz base stations, but can be used in 2.3 to 2.4 GHz wireless local loop and digital audio broadcast applications with modifications to the external matching circuit. The device delivers 100 W of output power (CW) with high linear gain of 11 dB (typ), high efficiency and good linearity. The unit features a 0.9 mm tungsten silicide gate structure for high reliability, silicon dioxide and nitride passivation for surface stability and plated heatsinks for reduced thermal resistance. Price $306 (100).
California Eastern Laboratories,
Santa Clara, CA
Surface-mount EMI Suppressors
These EMI suppressors are available in EIA-standard footprints ranging from 0805 to 1812, handle currents ranging from 1500 to 5000 mA and feature an impedance range from 12 to 600 W at 100 MHz. The units are suitable for either flow or reflow soldering at an operating temperature range from -55° to +125°C and a storage temperature range from -55° to +105°C. The suppressors are available on a standard 178 mm reel with 1000 to 4000 components per reel (depending on component size) or on a 330 mm reel containing 10,000 units. Prices: start at 62¢ (100,000). Delivery: stock to six weeks (ARO).
Associated Components Technology Inc.,
Garden Grove, CA
(800) 234-2645 or (714) 265-4800.
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